公开(公告)号：US08853819B2

公开(公告)日：2014-10-07

申请号：US13338087

申请日：2011-12-27

申请人： Chien-Hua Chen ,  Teck-Chong Lee ,  Hsu-Chiang Shih ,  Meng-Wei Hsieh

发明人： Chien-Hua Chen ,  Teck-Chong Lee ,  Hsu-Chiang Shih ,  Meng-Wei Hsieh

IPC分类号： H01L27/08 ,  H01L23/498 ,  H01L49/02 ,  H01L23/64 ,  H01L23/522 ,  H01L23/14 ,  H01L27/01 ,  H01L25/065 ,  H01L21/768 ,  H01L23/60

CPC分类号： H01L27/016 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/60 ,  H01L23/64 ,  H01L25/0657 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/1461 ,  H01L2924/00

摘要： The present invention relates to a semiconductor structure having an integrated passive network and a method for making the same. The semiconductor structure includes a substrate which can be an interposer. The substrate can include a plurality of conductive vias. In various embodiments, the substrate includes a dielectric layer disposed thereon, the dielectric layer having an opening forming a straight hole allowing electrical connection between the passive network and the conductive via. The passive network includes a series of patterned dielectric and conductive layers, forming passive electronic components. In an embodiment, the passive device includes a common resistor coupled to a pair of inductors, each of the inductors coupled to a capacitor. In another embodiment, the passive device includes a resistor and an inductor electrically connected to each other, a bottom surface of the inductor coplanar with a bottom surface of the resistor.

摘要翻译： 本发明涉及一种具有集成无源网络的半导体结构及其制造方法。 半导体结构包括可以是插入件的衬底。 衬底可以包括多个导电通孔。 在各种实施例中，衬底包括设置在其上的电介质层，电介质层具有形成直孔的开口，允许无源网络和导电通孔之间的电连接。 无源网络包括一系列图案化的电介质层和导电层，形成无源电子元件。 在一个实施例中，无源器件包括耦合到一对电感器的公共电阻器，每个电感器耦合到电容器。 在另一个实施例中，无源器件包括电阻器和电感器，它们彼此电连接，电感器的底表面与电阻器的底表面共面。

公开(公告)号：US20120175731A1

公开(公告)日：2012-07-12

申请号：US13338087

申请日：2011-12-27

申请人： Chien-Hua Chen ,  Teck-Chong Lee ,  Hsu-Chiang Shih ,  Meng-Wei Hsieh

发明人： Chien-Hua Chen ,  Teck-Chong Lee ,  Hsu-Chiang Shih ,  Meng-Wei Hsieh

IPC分类号： H01L29/02 ,  H01L21/02

CPC分类号： H01L27/016 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/60 ,  H01L23/64 ,  H01L25/0657 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/1461 ,  H01L2924/00

摘要： The present invention relates to a semiconductor structure having an integrated passive network and a method for making the same. The semiconductor structure includes a substrate which can be an interposer. The substrate can include a plurality of conductive vias. In various embodiments, the substrate includes a dielectric layer disposed thereon, the dielectric layer having an opening forming a straight hole allowing electrical connection between the passive network and the conductive via. The passive network includes a series of patterned dielectric and conductive layers, forming passive electronic components. In an embodiment, the passive device includes a common resistor coupled to a pair of inductors, each of the inductors coupled to a capacitor. In another embodiment, the passive device includes a resistor and an inductor electrically connected to each other, a bottom surface of the inductor coplanar with a bottom surface of the resistor.

摘要翻译： 本发明涉及一种具有集成无源网络的半导体结构及其制造方法。 半导体结构包括可以是插入件的衬底。 衬底可以包括多个导电通孔。 在各种实施例中，衬底包括设置在其上的电介质层，电介质层具有形成直孔的开口，允许无源网络和导电通孔之间的电连接。 无源网络包括一系列图案化的电介质层和导电层，形成无源电子元件。 在一个实施例中，无源器件包括耦合到一对电感器的公共电阻器，每个电感器耦合到电容器。 在另一个实施例中，无源器件包括电阻器和电感器，它们彼此电连接，电感器的底表面与电阻器的底表面共面。

公开(公告)号：US07368995B2

公开(公告)日：2008-05-06

申请号：US10708371

申请日：2004-02-26

申请人： Yi-Jen Chan ,  Meng-Wei Hsieh

发明人： Yi-Jen Chan ,  Meng-Wei Hsieh

IPC分类号： H03G3/10

CPC分类号： H03F1/3205 ,  H03F1/0261 ,  H03F1/301 ,  H03F3/21

摘要： A power amplifier with an active bias circuit and operating method thereof are provided. The power amplifier comprises a power amplifier transistor and an active bias circuit. The active circuit receives input power and applies a bias voltage to the gate of the power amplifier transistor. The bias voltage will increase in correspondence with an increase in the input power. Therefore, the power amplifier of this invention has excellent output power, linearity of operation and power-added efficiency in a range of input power.

摘要翻译： 提供一种具有有源偏置电路的功率放大器及其操作方法。 功率放大器包括功率放大器晶体管和有源偏置电路。 有源电路接收输入功率并向功率放大器晶体管的栅极施加偏置电压。 偏置电压将随着输入功率的增加而增加。 因此，本发明的功率放大器在输入功率范围内具有优异的输出功率，操作线性度和功率附加效率。

公开(公告)号：US09711593B2

公开(公告)日：2017-07-18

申请号：US13397465

申请日：2012-02-15

申请人： Hua-Chou Tseng ,  Meng-Wei Hsieh

发明人： Hua-Chou Tseng ,  Meng-Wei Hsieh

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/0646 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/404 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device and methods for forming the same are provided. The semiconductor device includes a first doped region and a second, oppositely doped, region both formed in a substrate, a first gate formed overlying a portion of the first doped region and a portion of the second doped region, two or more second gates formed over the substrate overlying a different portion of the second doped region, one or more third doped regions in the second doped region disposed only between the two or more second gates such that the third doped region and the second doped region having opposite conductivity types, a source region in the first doped region, and a drain region in the second doped region disposed across the second gates from the first gate.