摘要:
The present invention provides ESD protection circuits. The circuit includes: a resistor, a capacitance, a first transistor, an inverter set, and a second transistor. The resistor is connected between a first voltage and node N1. The capacitor is connected between node N1 and a second voltage. The first transistor has a first terminal coupled to the first voltage, a second terminal coupled to the second voltage, and a third terminal coupled to node N2. The inverter set has an input terminal coupled to node N1 and an output terminal coupled to node N2. The second transistor has a first terminal coupled to a first inverter of the inverter set, a second terminal coupled to the second voltage, and a third terminal coupled to an output terminal of a second inverter of the inverter set. The output terminals of the first and the second inverters correspond to opposite logic levels.
摘要:
An ESD protection circuit is disclosed. The ESD protection circuit includes a stacked MOS circuit, and a trigger current generator. The object of the stacked MOS circuit is to be the first releasing path of the ESD current; the object of the trigger current generator is to generate the trigger current to turn on the stacked MOS circuit, and then the stacked MOS circuit would be the first releasing path of the ESD current.
摘要:
An ESD protection circuit is disclosed. The ESD protection circuit includes a stacked MOS circuit, and a trigger current generator. The object of the stacked MOS circuit is to be the first releasing path of the ESD current; the object of the trigger current generator is to generate the trigger current to turn on the stacked MOS circuit, and then the stacked MOS circuit would be the first releasing path of the ESD current.
摘要:
An ESD protection circuit is disclosed. The ESD protection circuit includes a stacked MOS circuit and a trigger current generating circuit. The trigger current generating circuit will generate trigger signal(s) to turn on the stacked MOS circuit under ESD stress condition. The ESD voltage can thus be discharged through the current path formed by the stacked MOS circuit. A lower trigger voltage is achieved by technologies disclosed, which will make an integrated circuit more sensitive to ESD.
摘要:
An electrostatic discharge (ESD) circuitry bus within closed ring is disclosed. The closed ring comprises a plurality of metal layer. A metal layer can conduct electricity to another metal layer by conductive plugs. An oxide region can separate the closed ring into two closed ring regions by payout. Each closed ring region does not conduct electricity to each other by an oxide region. One closed ring section is Vdd bus. Therefore, the closed ring of the present invention can be sued by Vss bus and Vdd bus at the same time.
摘要:
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
摘要:
The disclosure relates to a load-adaptive bioelectrical current stimulator, which comprises a current output module, an adaptation module and a control module. The current output module generates a stimulus current to an electrode. The adaptation module detects the electrical status of the stimulus current passing through the electrode and generates a feedback signal to the control module. According to the feedback signal, the control module controls the current output module to stabilize the output status of the stimulus current adaptively. Thereby, the load-adaptive bioelectrical current stimulator can use the feedback control mechanism to regulate the value of the stimulus current to adapt to variation of load impedance.
摘要:
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
摘要:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
摘要:
An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.