公开(公告)号：US20120160227A1

公开(公告)日：2012-06-28

申请号：US13043476

申请日：2011-03-09

申请人： Chien-Sen Weng ,  Meng-Yeng Xing ,  Wei-Chang Yu ,  Chih-Sheng Chen ,  Yu-Ching Chang

发明人： Chien-Sen Weng ,  Meng-Yeng Xing ,  Wei-Chang Yu ,  Chih-Sheng Chen ,  Yu-Ching Chang

IPC分类号： B28D5/04

CPC分类号： B28D5/0041 ,  B28D5/0023 ,  H01L33/0095

摘要： A wafer splitting apparatus suitable for splitting a plurality of chip regions of a wafer into a plurality of independent dice is provided. The wafer splitting apparatus includes a splitting knife body and at least a vibrating hammer. The splitting knife body is disposed at one side of the wafer, and has a first surface facing the wafer. The first surface stretches over a plurality of chip regions in all extending directions of the first surface passing through a center of the first surface. The splitting knife body is disposed between the wafer and the vibrating hammer, and the vibrating hammer is suitable for knocking the splitting knife body in a direction toward the wafer to make the splitting knife body move toward the wafer, so as to split the chip regions of the wafer into a plurality of independent dice. A wafer splitting process is also provided.

摘要翻译： 提供了一种适于将晶片的多个芯片区域分成多个独立裸片的晶片分割装置。 晶片分割装置包括分割刀体和至少一个振动锤。 分割刀体设置在晶片的一侧，并且具有面向晶片的第一表面。 第一表面在通过第一表面的中心的第一表面的所有延伸方向上在多个芯片区域上延伸。 分割刀体设置在晶片和振动锤之间，振动锤适用于朝向晶片的方向敲击分割刀体，使分割刀体朝向晶片移动，从而将芯片区域 的晶片进入多个独立的骰子。 还提供了晶圆分离工艺。

公开(公告)号：US20110318858A1

公开(公告)日：2011-12-29

申请号：US13220694

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/44

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

公开(公告)号：US20110164195A1

公开(公告)日：2011-07-07

申请号：US13050950

申请日：2011-03-18

申请人： Mao-Yi Chang ,  Chia-Tien Peng ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Chao-Shun Liao

发明人： Mao-Yi Chang ,  Chia-Tien Peng ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Chao-Shun Liao

IPC分类号： G02F1/136

CPC分类号： G02F1/13452 ,  G02F1/133382

摘要： A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.

摘要翻译： 显示装置包括第一基板，形成在第一基板上的加热层，形成在加热层上的第一开口的绝缘层，至少一个开关装置，形成在绝缘层上的两个接触焊盘，分别电连接到 扫描线和数据线，电容器，覆盖开关器件和电容器的钝化层，以及形成在钝化层上并电连接到开关器件的漏极的像素电极。 开关器件的源极连接到数据线。 钝化层具有暴露接触焊盘的多个第二开口。

公开(公告)号：US20110159613A1

公开(公告)日：2011-06-30

申请号：US13046619

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/48

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

公开(公告)号：US20110159612A1

公开(公告)日：2011-06-30

申请号：US13046576

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/52

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

公开(公告)号：US20100015742A1

公开(公告)日：2010-01-21

申请号：US12252370

申请日：2008-10-16

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

摘要翻译： 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

公开(公告)号：US20090286336A1

公开(公告)日：2009-11-19

申请号：US12426301

申请日：2009-04-20

申请人： An-Thung Cho ,  Chia-Tien Peng ,  Yuan-Jun Hsu ,  Ching-Chieh Shih ,  Chien-Sen Weng ,  Kun-Chih Lin ,  Hang-Wei Tseug ,  Ming-Huang Chuang

发明人： An-Thung Cho ,  Chia-Tien Peng ,  Yuan-Jun Hsu ,  Ching-Chieh Shih ,  Chien-Sen Weng ,  Kun-Chih Lin ,  Hang-Wei Tseug ,  Ming-Huang Chuang

IPC分类号： H01L21/28

CPC分类号： H01L27/1214 ,  G02F1/13318 ,  G02F1/136213 ,  G02F2201/58 ,  G09G3/3406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2330/021 ,  G09G2360/144 ,  H01L27/127 ,  H01L31/103 ,  H01L31/105 ,  H04N5/58 ,  H04N5/66 ,  H04N21/42202

摘要： A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

摘要翻译： 提供了结合光传感器的制造的薄膜晶体管阵列基板的制造方法。 在制造方法中，在透明导电层和用于检测环境光的金属电极之间形成感光电介质层。 由于采用透明导电层作为电极，所以环境光可以通过透明导电层，并将入射光入射到感光电介质层中。 因此，可以扩大光传感器的感测面积，提高感光效率。 此外，光敏电介质层的另一侧可以是金属电极。 金属电极可阻挡背光入射到感光电介质层中，从而降低背景噪声。 还提供了采用上述薄膜晶体管阵列基板的液晶显示面板的制造方法。

公开(公告)号：US08232978B2

公开(公告)日：2012-07-31

申请号：US12465666

申请日：2009-05-14

申请人： Wen-Jen Chiang ,  An-Thung Cho ,  Chrong-Jung Lin ,  Chia-Tien Peng ,  Ya-Chin King ,  Kun-Chih Lin ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Feng-Yuan Gan

发明人： Wen-Jen Chiang ,  An-Thung Cho ,  Chrong-Jung Lin ,  Chia-Tien Peng ,  Ya-Chin King ,  Kun-Chih Lin ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Feng-Yuan Gan

IPC分类号： G06F3/042 ,  G06G3/36 ,  G09G5/00

CPC分类号： G06F3/0412 ,  G06F3/0421

摘要： An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

摘要翻译： 提供光反射式触摸面板及其像素及其系统。 光反射式触摸面板的每个像素包括显示电路和感测电路。 显示电路控制像素的显示。 感测电路耦合到显示电路，用于在背光模块的导通周期和关闭周期期间感测像素的感光状态，并输出数字信号以通知光反射式触摸面板系统，该像素是否是像素 是否被触动

公开(公告)号：US20110318855A1

公开(公告)日：2011-12-29

申请号：US13220693

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/44

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

摘要翻译： 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：US20110165705A1

公开(公告)日：2011-07-07

申请号：US13046606

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/36

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

摘要翻译： 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。