摘要:
A white light-emitting apparatus including a light-emitting device, a nitride fluorescent material and an oxynitride fluorescent material is provided. The light-emitting device is capable of generating a first color light having a first wavelength range. The nitride fluorescent material and the oxynitride fluorescent material cover the light-emitting device. The nitride and oxynitride fluorescent material are excited by the first color light, and further generate a second color light having a second wavelength range and a third color light having a third wavelength range, respectively. The first, second and third color lights are mixed together to generate a white light. A white light-emitting diode is also disclosed.
摘要:
A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译:提供了一种白光发射装置及其制备方法。 白光发射装置包括紫外(UV)发光二极管(LED)芯片,第一荧光体和第二荧光体,其中UV LED芯片产生第一辐射; 第一荧光体由Zn(C 3 N 2 H 4)2粉末组成,并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。 然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。
摘要:
A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译:提供了一种白光发射装置及其制备方法。 白光发射装置包括紫外(UV)发光二极管(LED)芯片,第一荧光体和第二荧光体,其中UV LED芯片产生第一辐射; 第一荧光体由Zn(C 3 N 2 H 4)2粉末组成,并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。 然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。
摘要:
A white-light emitting device and its preparation method are provided. The white-light emitting device comprises an ultraviolet (UV) light emitting diode (LED) chip, a first phosphor, and a second phosphor, wherein the UV LED chip generates a first radiation; the first phosphor is composed of Zn(C3N2H4)2 powder and is excited by the first radiation to generate a second radiation; and the second phosphor is excited by the first radiation and/or the second radiation to generate a third radiation. The third radiation is then mixed with the first radiation and/or the second radiation to generate a white light.
摘要翻译:提供了一种白光发射装置及其制备方法。 白光发射装置包括紫外(UV)发光二极管(LED)芯片,第一荧光体和第二荧光体,其中UV LED芯片产生第一辐射; 第一荧光体由Zn(C 3 N 2 H 4)2粉末组成,并被第一辐射激发以产生第二辐射; 并且第二荧光体被第一辐射和/或第二辐射激发以产生第三辐射。 然后将第三辐射与第一辐射和/或第二辐射混合以产生白光。
摘要:
A focus driving apparatus with impact resistance is provided, including a lens carrier seat, a fixed base, a hanging element set, and a shake-resistant element set. The lens carrier seat is for carrying a lens. The hanging element set further includes a plurality of metal wires. The shake-resistant element set includes at least a soft resilient plate. One end of the metal wires of hanging element set is fixed to the lens carrier seat, and the other end penetrates the holes on the soft and resilient plate on the fixed base and is fixed to the shake-resistant element set. The shake-resistant element set can absorb the external impact force by deformation to provide protection to the hanging element set and lens carrier seat.
摘要:
A driving apparatus for fine-tuning focus is provided, including a movable structure suspended inside an outer holder by a suspension set. The suspension set is connected to the movable structure and the outer holder respectively so that the movable structure is suspended inside the outer holder, and can move inside the outer holder. With a magnet force generated by the interaction of the magnetic field of said first magnet set and said second magnet set of said outer holder, and the electrical current in said first coils and said second coils of said movable structure, the magnet force is able to drive the movable structure upward and downward to adjust the focus.
摘要:
A focus driving apparatus with impact resistance is provided, including a lens carrier seat, a fixed base, a hanging element set, and a shake-resistant element set. The lens carrier seat is for carrying a lens. The hanging element set further includes a plurality of metal wires. The shake-resistant element set includes at least a soft resilient plate. One end of the metal wires of hanging element set is fixed to the lens carrier seat, and the other end penetrates the holes on the soft and resilient plate on the fixed base and is fixed to the shake-resistant element set. The shake-resistant element set can absorb the external impact force by deformation to provide protection to the hanging element set and lens carrier seat.
摘要:
A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.
摘要:
A method for fabricating an integrated circuit includes providing a substrate having thereon a material layer; forming trenches in the material layer; forming damascened wires in the trenches; covering the damascened wires and the material layer with a cap layer; forming a through hole in the cap layer that exposes a portion of the material layer; and removing the material layer thereby forming an air gap between the damascened wires.
摘要:
A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.