公开(公告)号：US20050052228A1

公开(公告)日：2005-03-10

申请号：US10653892

申请日：2003-09-04

申请人： Chih-Chieh Yeh ,  Hung-Yueh Chen ,  Wen-Jar Tsai ,  Tao-Cheng Lu

发明人： Chih-Chieh Yeh ,  Hung-Yueh Chen ,  Wen-Jar Tsai ,  Tao-Cheng Lu

IPC分类号： G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  G11C16/26 ,  G11C16/34 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H03F3/38

CPC分类号： G11C16/3418 ,  G11C16/0475 ,  G11C16/26

摘要： A method of operating a non-volatile memory cell, wherein the non-volatile memory cell includes a word line, a first bit line, and a second bit line, the method includes programming the memory cell that includes applying a high positive bias to the first bit line, applying a ground bias to the second bit line, and applying a high negative bias to the word line, wherein positively-charged holes tunnel through the dielectric layer into the trapping layer.

公开(公告)号：US06914819B2

公开(公告)日：2005-07-05

申请号：US10653892

申请日：2003-09-04

申请人： Chih-Chieh Yeh ,  Hung-Yueh Chen ,  Wen-Jer Tsai ,  Tao-Cheng Lu

发明人： Chih-Chieh Yeh ,  Hung-Yueh Chen ,  Wen-Jer Tsai ,  Tao-Cheng Lu

IPC分类号： G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  G11C16/26 ,  G11C16/34 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

CPC分类号： G11C16/3418 ,  G11C16/0475 ,  G11C16/26

摘要： A method of operating a non-volatile memory cell, wherein the non-volatile memory cell includes a word line, a first bit line, and a second bit line, the method includes programming the memory cell that includes applying a high positive bias to the first bit line, applying a ground bias to the second bit line, and applying a high negative bias to the word line, wherein positively-charged holes tunnel through the dielectric layer into the trapping layer.

摘要翻译： 一种操作非易失性存储单元的方法，其中所述非易失性存储单元包括字线，第一位线和第二位线，所述方法包括对所述存储器单元进行编程，所述存储单元包括向所述存储单元施加高正偏压 第一位线，对第二位线施加接地偏置，以及向字线施加高负偏压，其中带正电荷的空穴穿过介电层进入捕获层。

公开(公告)号：US20070159893A1

公开(公告)日：2007-07-12

申请号：US11616770

申请日：2006-12-27

申请人： TSO-HUNG FAN ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

发明人： TSO-HUNG FAN ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

IPC分类号： G11C16/04 ,  G11C11/34

CPC分类号： G11C16/12 ,  G11C11/5628 ,  G11C11/5635 ,  G11C2211/5621

摘要： A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.

摘要翻译： 多级闪存的编程方法包括拍摄每次逐步向多级闪速存储器的门逐渐增加的编程电压，并且随后，拍摄向下减小的编程验证电压， 在最后一个程序验证电压被拍摄之后，在多级闪存中高电平并在多级闪存中拍摄附加的编程电压。 多级闪速存储器的擦除方法包括拍摄每次逐步向下逐渐减小到多级闪存的门的擦除电压，随后，拍摄向上增加的擦除验证电压以擦除多级闪存， 在最后擦除验证电压被拍摄之后，多级闪存中的电平和多级闪存中的附加电压。

公开(公告)号：US07031196B2

公开(公告)日：2006-04-18

申请号：US10757073

申请日：2004-01-14

申请人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

发明人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

IPC分类号： G11C16/00

CPC分类号： G11C16/0475 ,  G11C16/3468 ,  H01L21/28273 ,  H01L29/792 ,  H01L29/7923

摘要： A method of programming the memory cell comprises setting the memory cell to an initial state of a first gate threshold voltage, performing a processing sequence including: applying a voltage bias between the gate and the first junction region to cause electric hole to migrate towards and be retained in the trapping layer, and evaluating a read current generated in response to the voltage bias to determine whether a second gate threshold voltage is reached, wherein the second gate threshold voltage is lower than the first gate threshold voltage. The processing sequence is repeated a number of times by varying one or more time the voltage bias between the gate and the first junction region until the second gate threshold voltage is reached and the memory cell is in a program state.

摘要翻译： 一种对存储器单元进行编程的方法包括将存储单元设置为第一栅极阈值电压的初始状态，执行处理顺序，包括：在栅极与第一结区域之间施加电压偏置，使电孔朝向 保持在捕获层中，并且评估响应于电压偏置产生的读取电流，以确定是否达到第二栅极阈值电压，其中第二栅极阈值电压低于第一栅极阈值电压。 通过改变栅极和第一结区域之间的电压偏压的一个或多个时间直到达到第二栅极阈值电压并且存储器单元处于编程状态来重复处理顺序多次。

公开(公告)号：US06917073B2

公开(公告)日：2005-07-12

申请号：US10643877

申请日：2003-08-20

申请人： Mu-Yi Liu ,  Chih-Chieh Yeh ,  Tso-Hung Fan ,  Tao-Cheng Lu

发明人： Mu-Yi Liu ,  Chih-Chieh Yeh ,  Tso-Hung Fan ,  Tao-Cheng Lu

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L29/792 ,  H01L27/115

摘要： To reduce the disturbance between adjacent memory cells, an improved ONO flash memory array is implanted with a pocket on one side of the channel of each memory cell or two pockets of different concentrations on both sides of the channel, thereby resulting in memory cells with asymmetric pockets. Consequently, no disturbances occurred between adjacent memory cells when the ONO flash memory array is programmed or erased by band-to-band techniques, and the disturbances between adjacent memory cells are also suppressed during reading process.

摘要翻译： 为了减少相邻存储单元之间的干扰，改进的ONO闪速存储器阵列在通道两侧的每个存储单元的通道的一侧或两个不同浓度的凹槽的一侧上注入一个口袋，从而导致不对称的存储单元 口袋 因此，当通过频带技术对ONO闪速存储器阵列进行编程或擦除时，相邻存储单元之间不会发生干扰，并且在读取过程中相邻存储单元之间的干扰也被抑制。

公开(公告)号：US20050040458A1

公开(公告)日：2005-02-24

申请号：US10643877

申请日：2003-08-20

申请人： Mu-Yi Liu ,  Chih-Chieh Yeh ,  Tso-Hung Fan ,  Tao-Cheng Lu

发明人： Mu-Yi Liu ,  Chih-Chieh Yeh ,  Tso-Hung Fan ,  Tao-Cheng Lu

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L29/792 ,  H01L27/115

摘要： To reduce the disturbance between adjacent memory cells, an improved ONO flash memory array is implanted with a pocket on one side of the channel of each memory cell or two pockets of different concentrations on both sides of the channel, thereby resulting in memory cells with asymmetric pockets. Consequently, no disturbances occurred between adjacent memory cells when the ONO flash memory array is programmed or erased by band-to-band techniques, and the disturbances between adjacent memory cells are also suppressed during reading process.

摘要翻译： 为了减少相邻存储单元之间的干扰，改进的ONO闪速存储器阵列在通道两侧的每个存储单元的通道的一侧或两个不同浓度的凹槽的一侧上注入一个口袋，从而导致不对称的存储单元 口袋 因此，当通过频带技术对ONO闪速存储器阵列进行编程或擦除时，相邻存储单元之间不会发生干扰，并且在读取过程中相邻存储单元之间的干扰也被抑制。

公开(公告)号：US06801453B2

公开(公告)日：2004-10-05

申请号：US10112871

申请日：2002-04-02

申请人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

发明人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

IPC分类号： G11C1604

CPC分类号： G11C16/3418 ,  G11C16/0475 ,  G11C16/26

摘要： A method of a read scheme for a non-volatile memory cell. The non-volatile memory cell includes a substrate, a source, a drain and a gate above a channel separated by a nonconducting charge trapping material sandwiched between first and second insulating layers. The method applies a first positive drain-to-source bias, a second positive source-to-substrate bias, and a third positive gate-to-source bias to read the source-side charges trapped in the trapping material near the source side.

摘要翻译： 一种用于非易失性存储单元的读取方案的方法。 非易失性存储单元包括衬底，源极，漏极以及由夹在第一绝缘层和第二绝缘层之间的非导电电荷捕获材料隔开的沟道之上的栅极。 该方法应用第一正的漏极 - 源极偏置，第二正的源极 - 衬底偏置和第三正向栅极 - 源偏置来读取在源极附近的捕获材料中的源极电荷。

公开(公告)号：US06687160B1

公开(公告)日：2004-02-03

申请号：US10064918

申请日：2002-08-29

申请人： Tso-Hung Fan ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

发明人： Tso-Hung Fan ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

IPC分类号： G11C1606

CPC分类号： G11C16/12 ,  G11C5/147 ,  G11C11/5621 ,  G11C11/5642 ,  G11C2211/5634

摘要： A reference current generation circuit for the multiple bit flash memory provided by the present invention applies the same boosted word-line voltage to the gates of different reference current generation unit's reference cells, and uses different gate lengths from different reference cells to obtain the reference currents with different levels that are needed. Therefore, it effectively solves the problem of the reference currents having different drifts along with the variance of the temperature and the power voltage Vcc.

摘要翻译： 本发明提供的用于多位闪速存储器的参考电流产生电路将相同的升压字线电压施加到不同参考电流产生单元的参考单元的栅极，并且使用来自不同参考单元的不同栅极长度来获得参考电流 需要不同的水平。 因此，它有效地解决了具有不同漂移的参考电流以及温度变化和电源电压Vcc的问题。

公开(公告)号：US06657894B2

公开(公告)日：2003-12-02

申请号：US10112923

申请日：2002-03-29

申请人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

发明人： Chih-Chieh Yeh ,  Wen-Jer Tsai ,  Tao-Cheng Lu

IPC分类号： G11C1604

CPC分类号： G11C16/0491 ,  G11C16/12

摘要： A virtual ground nonvolatile memory cell array is formed by a plurality of adjacent nonvolatile memory cells arranged in rows and columns so as to form an array. Each of the nonvolatile memory cells is formed by an N channel MOSFET with a trapping layer formed between two isolating layers. In the erase state, the trapping layer stores an amount of electrons. A method for programming the virtual ground nonvolatile memory cell array is also disclosed. The potentials applied to the bitlines and wordlines in the array are preset to program nonvolatile memory cells and not to disturb cells adjacent to the nonvolatile memory cell to be programmed.

摘要翻译： 由布置成行和列的多个相邻的非易失性存储单元形成虚拟非易失性存储单元阵列，以形成阵列。 每个非易失性存储单元由具有在两个隔离层之间形成的捕获层的N沟道MOSFET形成。 在擦除状态下，捕获层存储一定量的电子。 还公开了一种用于编程虚拟接地非易失性存储单元阵列的方法。 应用于阵列中的位线和字线的电位被预设为非易失性存储器单元，而不是干扰与待编程的非易失性存储器单元相邻的单元。

公开(公告)号：US06958934B2

公开(公告)日：2005-10-25

申请号：US10065761

申请日：2002-11-15

申请人： Tso-Hung Fan ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

发明人： Tso-Hung Fan ,  Chih-Chieh Yeh ,  Tao-Cheng Lu

IPC分类号： G11C11/56 ,  G11C16/02

CPC分类号： G11C16/12 ,  G11C11/5628 ,  G11C11/5635 ,  G11C2211/5621

摘要： A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.

摘要翻译： 多级闪存的编程方法包括拍摄每次逐步向多级闪速存储器的门逐渐增加的编程电压，并且随后，拍摄向下减小的编程验证电压， 在最后一个程序验证电压被拍摄之后，在多级闪存中高电平并在多级闪存中拍摄附加的编程电压。 多级闪速存储器的擦除方法包括拍摄每次逐步向下逐渐减小到多级闪存的门的擦除电压，随后，拍摄向上增加的擦除验证电压以擦除多级闪存， 在最后擦除验证电压被拍摄之后，多级闪存中的电平和多级闪存中的附加电压。