公开(公告)号：US20060189056A1

公开(公告)日：2006-08-24

申请号：US11407633

申请日：2006-04-20

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

IPC分类号： H01L21/8234

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7848

摘要： A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

公开(公告)号：US20050263828A1

公开(公告)日：2005-12-01

申请号：US11194084

申请日：2005-07-29

申请人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

发明人： Chung-Hu Ke ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chih-Hsin Ko ,  Chenming Hu

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80

CPC分类号： H01L29/7846 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/1033 ,  H01L29/78 ,  H01L29/7842

摘要： A high performance semiconductor device and the method for making same is disclosed with an improved drive current. The semiconductor device has source and drain regions built on an active region, a length of the device being different than a width thereof. One or more isolation regions are fabricated surrounding the active region, the isolation regions are then filled with an predetermined isolation material whose volume shrinkage exceeds 0.5% after an anneal process. A gate electrode is formed over the active region, and one or more dielectric spacers are made next to the gate electrode. Then, a contact etch stopper layer is put over the device, wherein the isolation regions, spacers and contact etch layer contribute to modulating a net strain imposed on the active region so as to improve the drive current.

公开(公告)号：US20050156274A1

公开(公告)日：2005-07-21

申请号：US11081919

申请日：2005-03-16

申请人： Yee-Chia Yeo ,  Chih-Hsin Ko ,  Wen-Chin Lee ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Chih-Hsin Ko ,  Wen-Chin Lee ,  Chenming Hu

IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/00

CPC分类号： H01L29/7842 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1203

摘要： A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.

摘要翻译： 半导体器件包括其中形成有第一和第二隔离沟槽的半导体材料区域。 第一隔离槽衬有具有低氧扩散速率的第一材料并填充绝缘材料。 第二隔离槽不是衬有第一材料，而是用绝缘材料填充。 形成在第一隔离区域附近的第一晶体管和邻近第二隔离区域形成的第二晶体管。

公开(公告)号：US20050127400A1

公开(公告)日：2005-06-16

申请号：US10745831

申请日：2003-12-24

申请人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ke ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ke ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L27/06 ,  H01L29/02 ,  H01L29/165 ,  H01L29/8605 ,  H01L31/109

CPC分类号： H01L27/0629 ,  H01L29/165 ,  H01L29/8605

摘要： A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.

摘要翻译： 异质结构电阻器包括形成在半导体衬底的一部分中的掺杂区域，该衬底包括具有第一自然晶格常数的第一半导体材料。 掺杂区域包括覆盖半导体衬底的半导体层。 半导体层包括具有第二自然晶格常数的第二半导体材料。

公开(公告)号：US07646068B2

公开(公告)日：2010-01-12

申请号：US11483913

申请日：2006-07-10

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L29/76 ,  H01L29/00

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

摘要翻译： 半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。 电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128.应变沟道晶体管132形成在第二有源区域中。 该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

公开(公告)号：US07101742B2

公开(公告)日：2006-09-05

申请号：US10639170

申请日：2003-08-12

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

IPC分类号： H01L21/336

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7848

摘要： A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

摘要翻译： 晶体管包括覆盖沟道区的栅极电介质。 源极区域和漏极区域位于沟道区域的相对侧上。 沟道区由第一半导体材料形成，源极和漏极区由第二半导体材料形成。 栅极电极覆盖栅极电介质。 在栅电极的侧壁上形成一对间隔物。 每个间隔件包括邻近通道区域的空隙。 高应力膜可以覆盖栅电极和间隔物。

公开(公告)号：US06882025B2

公开(公告)日：2005-04-19

申请号：US10423513

申请日：2003-04-25

申请人： Yee-Chia Yeo ,  Chih-Hsin Ko ,  Wen-Chin Lee ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Chih-Hsin Ko ,  Wen-Chin Lee ,  Chenming Hu

IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/00

CPC分类号： H01L29/7842 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1203

摘要： A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.

摘要翻译： 半导体器件包括其中形成有第一和第二隔离沟槽的半导体材料区域。 第一隔离槽衬有具有低氧扩散速率的第一材料并填充绝缘材料。 第二隔离槽不是衬有第一材料，而是用绝缘材料填充。 形成在第一隔离区域附近的第一晶体管和与第二隔离区域相邻形成的第二晶体管。

公开(公告)号：US20050035409A1

公开(公告)日：2005-02-17

申请号：US10729095

申请日：2003-12-05

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L27/01 ,  H01L29/78

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

摘要翻译： 半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。 电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128.应变沟道晶体管132形成在第二有源区域中。 该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

公开(公告)号：US07442967B2

公开(公告)日：2008-10-28

申请号：US11407633

申请日：2006-04-20

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chenming Hu

IPC分类号： H01L31/0328

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7848

摘要： A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

摘要翻译： 晶体管包括覆盖沟道区的栅极电介质。 源极区域和漏极区域位于沟道区域的相对侧上。 沟道区由第一半导体材料形成，源极和漏极区由第二半导体材料形成。 栅极电极覆盖栅极电介质。 在栅电极的侧壁上形成一对间隔物。 每个间隔件包括邻近通道区域的空隙。 高应力膜可以覆盖栅电极和间隔物。

公开(公告)号：US20060255365A1

公开(公告)日：2006-11-16

申请号：US11483913

申请日：2006-07-10

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L31/00

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.