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    UV CURING SYSTEM FOR SEMICONDUCTORS
    3.
    发明申请
    UV CURING SYSTEM FOR SEMICONDUCTORS 有权
    用于半导体的UV固化系统

    公开(公告)号：US20130320235A1

    公开(公告)日：2013-12-05

    申请号：US13486025

    申请日：2012-06-01

    申请人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

    发明人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

    IPC分类号： G21K5/08

    CPC分类号： H01L21/6776 ,  H01L21/3105 ,  H01L21/67115

    摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.

    摘要翻译： 公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。 固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。 在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。 在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。 在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。 各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

    VALVE PURGE ASSEMBLY FOR SEMICONDUCTOR MANUFACTURING TOOLS
    4.
    发明申请
    VALVE PURGE ASSEMBLY FOR SEMICONDUCTOR MANUFACTURING TOOLS 审中-公开
    用于半导体制造工具的阀门组件

    公开(公告)号：US20130239889A1

    公开(公告)日：2013-09-19

    申请号：US13419835

    申请日：2012-03-14

    申请人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

    发明人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

    IPC分类号： C23C16/00 ,  F24F7/00

    CPC分类号： C23C16/54 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67126

    摘要： A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.

    摘要翻译： 提供了一种用于操作该工具的半导体制造工具和方法。 半导体制造工具包括其中执行等离子体操作或离子蚀刻操作的处理室和用于打开和关闭提供用于将衬底加载和卸载到半导体制造工具中的阀的阀组件。 当在腔室中进行处理操作时，也发生阀组件清洗操作。 阀组件清洗操作涉及惰性气体被引导到阀组件区域，以防止阀组件中的颗粒和污染膜的积聚。 因为阀组件保持在清洁状态，颗粒污染被减少或消除。

    SEMICONDUCTOR FILM FORMATION APPARATUS AND PROCESS
    5.
    发明申请
    SEMICONDUCTOR FILM FORMATION APPARATUS AND PROCESS 有权
    半导体膜形成装置和工艺

    公开(公告)号：US20130295297A1

    公开(公告)日：2013-11-07

    申请号：US13460884

    申请日：2012-05-01

    申请人： You-Hua CHOU ,  Chih-Tsung LEE ,  Shu-Fen WU ,  Chin-Hsiang LIN

    发明人： You-Hua CHOU ,  Chih-Tsung LEE ,  Shu-Fen WU ,  Chin-Hsiang LIN

    IPC分类号： C23C16/455 ,  H05H1/24

    CPC分类号： C23C16/45565 ,  C23C16/5096

    摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.

    摘要翻译： 公开了用于在半导体衬底上形成薄膜的装置和方法。 在一个实施例中的装置包括被配置用于支撑衬底，气体激发电源以及流体耦合到含有反应性工艺气体源的膜前体的第一和第二气体分配喷头的处理室。 喷头将气体分配到衬底上方的两个不同区域中，该衬底被激发以在晶片上产生内部等离子体场和外部等离子体场。 该装置以促进在基底上形成具有基本上均匀的厚度的膜的方式将材料沉积在基底上。 在一个实施例中，衬底是晶片。 各种实施例包括连接到第一和第二喷头的第一和第二可独立控制的电源，以改变每个区域中的功率电平和等离子体强度。