公开(公告)号：US20080027174A1

公开(公告)日：2008-01-31

申请号：US11777200

申请日：2007-07-12

申请人： Chikara Kawamura ,  Kenichi Umezawa ,  Kouichi Takemoto

发明人： Chikara Kawamura ,  Kenichi Umezawa ,  Kouichi Takemoto

IPC分类号： C08F216/06

CPC分类号： C09D151/02 ,  C08L2666/02 ,  C09J151/02

摘要： A starch-based coating composition that utilizes naturally derived biodegradable starch and exhibits excellent storage stability as an one-pack lacquer, and that can form coated films with superiority in terms of finished appearance, hardness, adhesion, chemical resistance and alkali resistance. The binder used is a resin (A) obtained by bonding a vinyl polymer onto starch and/or modified starch by graft polymerization, or a resin (C) obtained by reacting the resin (A) with an isocyanate group-containing product (B) obtained by reacting a polyisocyanate compound (b1) with a polyhydric alcohol (b2).

摘要翻译： 一种淀粉类涂料组合物，其采用天然衍生的可生物降解淀粉，并且作为单组分漆具有优异的储存稳定性，并且可以在成品外观，硬度，粘合性，耐化学性和耐碱性方面形成优异的涂膜。 使用的粘合剂是通过接枝聚合将乙烯基聚合物粘合到淀粉和/或改性淀粉上获得的树脂（A），或通过使树脂（A）与含异氰酸酯基的产物（B）反应获得的树脂（C） 通过使多异氰酸酯化合物（b1）与多元醇（b2）反应而得到。

公开(公告)号：US08685225B2

公开(公告)日：2014-04-01

申请号：US12524947

申请日：2008-02-08

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C25F1/04

CPC分类号： C22B58/00 ,  C22B3/045 ,  C22B3/44 ,  C22B7/006 ,  C22B25/04 ,  C22B25/06 ,  C25B1/00 ,  Y02P10/228 ,  Y02P10/234

摘要： Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

摘要翻译： 提出了一种从包含导电氧化物的废料中回收有价金属的方法，包括以下步骤：使用含有导电氧化物的废料并进行电解同时周期性地反转极性，并以氢氧化物回收废料。 通过上述从包含导电氧化物的废料中回收有价值金属的方法，氧化物系废料是导电氧化物和可用氢还原成金属或低氧化物的物质。 该方法能够有效地从包含导电氧化物或废料的溅射靶材废料中有效地回收有价值的金属，例如在制造这样的溅射靶时产生的导电氧化物的研磨端。

公开(公告)号：US20120180600A1

公开(公告)日：2012-07-19

申请号：US13498252

申请日：2010-09-28

申请人： Jin Sato ,  Kouichi Takemoto ,  Takeshi Sasaki ,  Mikio Ohno ,  Junji Ogura

发明人： Jin Sato ,  Kouichi Takemoto ,  Takeshi Sasaki ,  Mikio Ohno ,  Junji Ogura

IPC分类号： B22F9/18

CPC分类号： B22F9/22 ,  B22F2201/013 ,  C22C27/04

摘要： Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.4 wtppm or less; wherein the ammonium tungstate solution is neutralized with hydrochloric acid to adjust the pH at 4 or more and 6 or less, and this solution is subject to the same procedure as described above so as to obtain a high-purity tungsten powder. Consequently, the phosphorus content can be efficiently reduced.

摘要翻译： 本发明提供磷含量小于1重量ppm的高纯度钨粉的制造方法， 其中以钨含量计含有1重量ppm或更多的磷作为杂质的钨酸钨溶液用作原料，该溶液在50℃或更低的温度下用盐酸中和以调节pH 在4以上且小于7以下，以使仲钨酸铵十一水合物晶体析出，将所得溶液加热至70〜90℃，并在高温状态下过滤，得到仲钨酸铵五水合物晶体，得到的晶体为 煅烧以形成氧化钨，并且将氧化钨进行氢还原以获得高纯度钨粉末。 另外提供了一种磷含量为0.4重量ppm以下的高纯度钨粉的制造方法， 其中钨酸铵溶液用盐酸中和以将pH调节至4以上且6以下，并且将该溶液按照与上述相同的方法进行，以获得高纯度的钨粉末。 因此，可以有效地降低磷含量。

公开(公告)号：US08216442B2

公开(公告)日：2012-07-10

申请号：US12721625

申请日：2010-03-11

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C25C1/12

CPC分类号： C22B15/0086 ,  C25C1/12 ,  C25C7/06 ,  H01L24/45 ,  H01L2224/45147 ,  H01L2924/00011 ,  H05K1/09 ,  Y02P10/236 ,  H01L2924/01208 ,  H01L2924/01012 ,  H01L2924/01001 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016

摘要： A manufacturing method of ultrahigh purity copper is provided wherein, upon subjecting copper to high purification with the electrolytic method, an anode and a cathode are partitioned with an anion exchange membrane, anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed. This technology enables the efficient manufacture of ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher from a copper raw material containing large amounts of impurities.

摘要翻译： 提供了一种超高纯度铜的制造方法，其中，通过电解方法对铜进行高纯化，阳极和阴极用阴离子交换膜分隔，阳极电解液间断地或连续地提取并导入活性炭处理容器， 向活性炭处理容器中加入含氯物质，以氯化物的形式析出杂质，随后将活性炭倒入并搅拌，吸附析出的杂质，过滤除去吸附的杂质，得到高纯度 铜电解液间断地或连续地引入阴极侧并进行电解。 该技术能够从含有大量杂质的铜原料高效地制造纯度为8N（99.999999重量％）以上的超高纯度铜。

公开(公告)号：US08007652B2

公开(公告)日：2011-08-30

申请号：US12445776

申请日：2007-06-27

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C25C1/00 ,  C25C1/14 ,  C25C1/22 ,  C25C5/02 ,  C01G19/00 ,  C01G15/00 ,  C22B25/00 ,  C22B58/00 ,  C25B11/04

CPC分类号： C25C1/24 ,  C22B3/045 ,  C22B7/006 ,  C22B25/06 ,  C22B58/00 ,  Y02P10/228 ,  Y02P10/234

摘要： Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis and collecting the result as indium-tin alloy. Additionally provided is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and an indium-tin alloy collecting bath, dissolving the ITO in the electrolytic bath, and thereafter collecting indium-tin alloy in the indium-tin alloy collecting bath. These methods enable the efficient collection of indium-tin alloy from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

摘要翻译： 提出了从ITO废料中收集有价金属的方法，包括以下步骤：对ITO废料进行电解处理，并将结果作为铟锡合金进行收集。 另外提供了一种从ITO废料中收集有价金属的方法，包括以下步骤：提供ITO电解槽和铟 - 锡合金收集槽，将ITO溶解在电解槽中，然后在铟 - 锡合金收集浴。 这些方法使得能够在ITO溅射靶的制造期间从铟锡氧化物（ITO）溅射靶的ITO废料或诸如ITO研磨端的ITO废料有效收集铟锡合金。

公开(公告)号：US20110033369A1

公开(公告)日：2011-02-10

申请号：US12908972

申请日：2010-10-21

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C01G3/10

CPC分类号： C01G3/10 ,  C22B15/0089 ,  Y02P10/236

摘要： High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less is provided. A method for producing such high purity copper sulfate includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.

摘要翻译： 提供纯度为99.99％以上的高纯度硫酸铜，其中过渡金属如Fe，Cr，Ni的含量为3重量ppm以下。 制备这种高纯度硫酸铜的方法包括以下步骤：将硫酸铜晶体溶解在纯化水中，进行蒸发浓缩，除去最初沉淀的晶体，进一步蒸发浓缩以进行结晶，并将其过滤得到高纯度铜 硫酸盐。 这种高纯度硫酸铜的制造方法允许通过用纯化水溶解和热浓缩，以低成本有效地从市售的硫酸铜晶体中除去杂质。

公开(公告)号：US20100193372A1

公开(公告)日：2010-08-05

申请号：US12445776

申请日：2007-06-27

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C25C1/24

CPC分类号： C25C1/24 ,  C22B3/045 ,  C22B7/006 ,  C22B25/06 ,  C22B58/00 ,  Y02P10/228 ,  Y02P10/234

摘要： Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis and collecting the result as indium-tin alloy. Additionally provided is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and an indium-tin alloy collecting bath, dissolving the ITO in the electrolytic bath, and thereafter collecting indium-tin alloy in the indium-tin alloy collecting bath. These methods enable the efficient collection of indium-tin alloy from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

摘要翻译： 提出了从ITO废料中收集有价金属的方法，包括以下步骤：对ITO废料进行电解处理，并将结果作为铟锡合金进行收集。 另外提供了一种从ITO废料中收集有价金属的方法，包括以下步骤：提供ITO电解槽和铟 - 锡合金收集槽，将ITO溶解在电解槽中，然后在铟 - 锡合金收集浴。 这些方法使得能够在ITO溅射靶的制造期间从铟锡氧化物（ITO）溅射靶的ITO废料或诸如ITO研磨端的ITO废料有效收集铟锡合金。

公开(公告)号：US20100084281A1

公开(公告)日：2010-04-08

申请号：US12445310

申请日：2007-06-27

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C25C1/22 ,  C22B3/00 ,  C22B25/06

CPC分类号： C25C1/22 ,  C22B3/045 ,  C22B3/44 ,  C22B7/006 ,  C22B25/06 ,  C22B58/00 ,  C25B1/00 ,  Y02P10/228 ,  Y02P10/234

摘要： Proposed is a method for collecting valuable metal from an ITO scrap by subjecting the ITO scrap to electrolysis and collecting the result as metallic indium. Specifically, the present invention proposes a method for selectively collecting metallic indium including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane, subsequently extracting anolyte temporarily, eliminating tin contained in the anolyte by a neutralization method, a replacement method or other methods, placing a solution from which the tin was eliminated in a cathode side again and performing electrolysis thereto; or a method for collecting valuable metal from an ITO scrap including the steps of obtaining a solution of In or Sn in an ITO electrolytic bath, eliminating the Sn in the solution, and collecting In in the collecting bath. These methods enable the efficient collection of metallic indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

摘要翻译： 提出了通过对ITO废料进行电解并将结果作为金属铟收集从ITO废料中收集有价金属的方法。 具体地说，本发明提出了一种选择性收集金属铟的方法，包括以下步骤：在用隔膜或离子交换膜分隔的电解槽中对ITO废料进行电解，随后临时萃取阳极电解液，通过 中和方法，替代方法或其它方法，在阴极侧再次放出锡被除去的溶液并进行电解; 或从ITO废料中收集有价金属的方法，包括以下步骤：在ITO电解槽中获得In或Sn溶液，除去溶液中的Sn，并在收集槽中收集In。 这些方法能够在ITO溅射靶的制造期间有效地收集来自铟锡氧化物（ITO）溅射靶的ITO废料的金属铟或ITO粉末等ITO废料。

公开(公告)号：US20090272466A1

公开(公告)日：2009-11-05

申请号：US11915628

申请日：2006-04-24

申请人： Yuichiro Shindo ,  Kouichi Takemoto

发明人： Yuichiro Shindo ,  Kouichi Takemoto

IPC分类号： C22C9/00 ,  C25D21/06 ,  C25D3/38

CPC分类号： C22B15/0084 ,  C22B15/0073 ,  C22B15/0089 ,  C22C9/00 ,  C25C1/12 ,  C25C7/06 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01105 ,  H01L2924/01208 ,  H01L2924/10253 ,  H01L2924/14 ,  Y02P10/236 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01205 ,  H01L2924/01046 ,  H01L2924/00014 ,  H01L2224/45647 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01033 ,  H01L2924/01001 ,  H01L2924/01006 ,  H01L2924/01007

摘要： Provided is ultrahigh purity copper having a hardness of 40 Hv or less, and a purity of 8N or higher (provided that this excludes the gas components of O, C, N, H, S and P). With this ultrahigh purity copper, the respective elements of O, S and P as gas components are 1 wtppm or less. Also provided is a manufacturing method of ultrahigh purity copper based on two-step electrolysis using an electrolytic solution comprised of copper nitrate solution, including the procedures of adding hydrochloric acid in an electrolytic solution comprised of copper nitrate solution; circulating the electrolytic solution; and performing two-step electrolysis while eliminating impurities with a filter upon temporarily setting the circulating electrolytic solution to a temperature of 10° C. or less. The present invention provides a copper material that is compatible with the thinning (wire drawing) of the above, and is capable of efficiently manufacturing ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher, providing the obtained ultrahigh purity copper, and providing a bonding wire for use in a semiconductor element that can be thinned.

摘要翻译： 提供硬度为40Hv或更低，纯度为8N以上的超高纯度铜（不包括O，C，N，H，S和P的气体成分）。 使用该超高纯度铜，作为气体成分的O，S​​，P的各元素为1重量ppm以下。 还提供了使用由硝酸铜溶液组成的电解液的两步电解的超高纯度铜的制造方法，包括在由硝酸铜溶液构成的电解液中加入盐酸的工序; 循环电解液; 并且在将循环电解液临时设定为10℃以下的温度的同时，用过滤器除去杂质，进行两步电解。 本发明提供一种与上述变薄（拉丝）相容的铜材料，能够有效地制造纯度为8N（99.999999重量％）以上的超高纯度铜，提供所得到的超高纯度铜， 以及提供用于可以变薄的半导体元件的接合线。

公开(公告)号：US08764877B2

公开(公告)日：2014-07-01

申请号：US13498252

申请日：2010-09-28

申请人： Jin Sato ,  Kouichi Takemoto ,  Takeshi Sasaki ,  Mikio Ohno ,  Junji Ogura

发明人： Jin Sato ,  Kouichi Takemoto ,  Takeshi Sasaki ,  Mikio Ohno ,  Junji Ogura

IPC分类号： B22F9/26 ,  B22F9/22 ,  C22C27/04

CPC分类号： B22F9/22 ,  B22F2201/013 ,  C22C27/04

摘要： Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.4 wtppm or less; wherein the ammonium tungstate solution is neutralized with hydrochloric acid to adjust the pH at 4 or more and 6 or less, and this solution is subject to the same procedure as described above so as to obtain a high-purity tungsten powder. Consequently, the phosphorus content can be efficiently reduced.

摘要翻译： 本发明提供磷含量小于1重量ppm的高纯度钨粉的制造方法， 其中以钨含量计含有1重量ppm或更多的磷作为杂质的钨酸钨溶液用作原料，该溶液在50℃或更低的温度下用盐酸中和以调节pH 在4以上且小于7以下，以使仲钨酸铵十一水合物晶体析出，将所得溶液加热至70〜90℃，并在高温状态下过滤，得到仲钨酸铵五水合物晶体，得到的晶体为 煅烧以形成氧化钨，并且将氧化钨进行氢还原以获得高纯度钨粉末。 另外提供了一种磷含量为0.4重量ppm以下的高纯度钨粉的制造方法， 其中钨酸铵溶液用盐酸中和以将pH调节至4以上且6以下，并且将该溶液按照与上述相同的方法进行，以获得高纯度的钨粉末。 因此，可以有效地降低磷含量。