公开(公告)号：US20110207245A1

公开(公告)日：2011-08-25

申请号：US13097251

申请日：2011-04-29

申请人： Chishio KOSHIMIZU ,  Tomohiro Suzuki

发明人： Chishio KOSHIMIZU ,  Tomohiro Suzuki

IPC分类号： H01L21/465 ,  H01L21/66

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US07956310B2

公开(公告)日：2011-06-07

申请号：US11529390

申请日：2006-09-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： B23K10/00

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US07446881B2

公开(公告)日：2008-11-04

申请号：US11325504

申请日：2006-01-05

申请人： Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01B11/0675

摘要： A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

摘要翻译： 一种测量装置，包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分离器，参考反射镜，其中 来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光路长度的机构和用于测量从参考反射镜反射的参考光的干涉作为参考的机构 来自分离器的光朝向参考反射镜照射，并且作为来自分离器的测量光从多个测量对象反射的测量光束朝向测量对象辐射，以便透射通过测量目标。

公开(公告)号：US20070084847A1

公开(公告)日：2007-04-19

申请号：US11529390

申请日：2006-09-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： F27B5/14 ,  F27B5/18

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US07542148B2

公开(公告)日：2009-06-02

申请号：US11564604

申请日：2006-11-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： G01B11/02

CPC分类号： G01B9/02023 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02083 ,  G01B9/0209 ,  G01J5/0003 ,  G01J2005/583 ,  G01K5/52 ,  G01K11/00 ,  G01K11/3206

摘要： A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.

摘要翻译： 一种能够精确地测量基板处理装置中的测量对象的物理量的方法。 在实现该方法的温度测量装置中，当使参考反射镜沿远离准直光纤的方向移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 当使远离准直光纤的参考镜向准直器光纤移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 计算干涉位置差的平均值，根据平均值确定光程长度差，并根据光程长度差计算晶片温度。

公开(公告)号：US20070127034A1

公开(公告)日：2007-06-07

申请号：US11564604

申请日：2006-11-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01B9/02023 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02083 ,  G01B9/0209 ,  G01J5/0003 ,  G01J2005/583 ,  G01K5/52 ,  G01K11/00 ,  G01K11/3206

摘要： A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.

摘要翻译： 一种能够精确地测量基板处理装置中的测量对象的物理量的方法。 在实现该方法的温度测量装置中，当使参考反射镜沿远离准直光纤的方向移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 当使远离准直光纤的参考镜向准直器光纤移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 计算干涉位置差的平均值，根据平均值确定光程长度差，并根据光程长度差计算晶片温度。

公开(公告)号：US08164033B2

公开(公告)日：2012-04-24

申请号：US13097251

申请日：2011-04-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： H05B1/02

CPC分类号： F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

摘要翻译： 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US07416330B2

公开(公告)日：2008-08-26

申请号：US11196402

申请日：2005-08-04

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01J5/08 ,  G01N25/00

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

公开(公告)号：US20060176490A1

公开(公告)日：2006-08-10

申请号：US11349276

申请日：2006-02-08

申请人： Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B9/02

CPC分类号： G01B9/02021 ,  G01B9/02018 ,  G01B9/02025 ,  G01B9/02031 ,  G01B9/0209 ,  G01B11/06 ,  G01B2290/25 ,  G01K5/52 ,  G01K11/00

摘要： In the apparatus according to the present invention, light from a light source is split into measurement light and reference light, the optical path length of the reference light is altered and a plurality of measurement light interference waveforms resulting from the interference of measurement beams reflected at a measurement target and the reference light are measured. One of these interference waveforms is designated as a reference interference waveform, another interference waveform corresponding to a measurement beam reciprocally reflected at the two end surfaces of the measurement target twice more than the measurement beam corresponding to the reference interference waveform is designated as a selected interference waveform, the optical path length of the measurement light indicated by the distance between the two end surfaces of the measurement target is measured based upon these interference waveforms. The temperature of the measurement targets is determined in correspondence to the optical path length.

摘要翻译： 在根据本发明的装置中，来自光源的光被分成测量光和参考光，参考光的光程长度被改变，并且由测量光束的干涉产生的多个测量光干涉波形反映在 测量测量对象和参考光。 将这些干扰波形中的一个指定为参考干扰波形，将对应于在测量对象的两个端面处往复反射的测量光束的另一个干扰波形比对应于参考干扰波形的测量波长多两倍指定为所选干扰 基于这些干扰波形，测量由测量对象的两个端面之间的距离指示的测量光的光程长度。 根据光程长度确定测量对象的温度。

公开(公告)号：US20060152734A1

公开(公告)日：2006-07-13

申请号：US11325504

申请日：2006-01-05

申请人： Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B9/02

CPC分类号： G01B11/0675

摘要： A measuring apparatus comprises a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a drive means for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a light receiving means for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

摘要翻译： 测量装置包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分束器，参考反射镜，其中 来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光程长度的驱动装置和用于测量从参考反射镜反射的参考光的干涉的光接收装置 当来自分路器的参考光被照射到参考反射镜时，作为来自分离器的测量光从多个测量目标物反射的测量光束朝向测量目标辐射，以便透射通过测量目标。