摘要:
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.
摘要:
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.
摘要:
Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform center-to-edge critical dimensions (CD) can be achieved when the mask pattern is used to support photolithographically patterning of underlying layers (e.g., insulating layers, antireflective coatings, etc.).
摘要:
Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. A polymer material is disposed over the masking material. The masking material and the polymer layer are used to pattern the material layer of the workpiece.
摘要:
Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
摘要:
Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
摘要:
A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.
摘要:
Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. An additional substance is introduced and the lower portion of the masking material is patterned. The masking material and the additional substance are used to pattern the material layer of the workpiece.
摘要:
Process control systems and methods for semiconductor device manufacturing are disclosed. A plurality of feedback and feed-forward loops are used to accurately control the critical dimension (CD) of features formed on material layers of semiconductor devices. Semiconductor devices with features having substantially the same dimension for each die across the surface of a wafer may be fabricated using the novel process control systems and methods described herein.
摘要:
Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.