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公开(公告)号：US20110250530A1
公开(公告)日：2011-10-13
申请号：US13164139
申请日：2011-06-20
CPC分类号： H01L21/28123 , H01L21/32134 , H01L21/32137
摘要： Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
摘要翻译： 公开了半导体器件及其制造方法。 多个特征形成在工件上，多个特征位于工件的第一区域和第二区域中。 第一区域中的特征具有第一横向尺寸，并且第二区域中的特征具有第二横向尺寸，其中第二横向尺寸大于第一横向尺寸。 第一区域被掩蔽，并且第二区域中的特征的第二横向尺寸减小。
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公开(公告)号：US20100120177A1
公开(公告)日：2010-05-13
申请号：US12691218
申请日：2010-01-21
IPC分类号： H01L21/66 , H01L21/3065 , H01L21/308 , H01L21/306
CPC分类号： H01L21/32137 , H01L22/12
摘要： A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.
摘要翻译： 公开了一种用于制造半导体器件的方法，其包括确定设置在工件上的材料层中的图案的尺寸或其他物理特性，以及使用与所述尺寸相关的信息来蚀刻所述材料层。 还公开了一种用于制造半导体器件的系统，该半导体器件包括被配置为蚀刻层以限定该层中的图案的第一蚀刻系统，以及被配置为测量该图案的物理特性的第二蚀刻系统，基于 物理特性，并根据蚀刻控制参数刻蚀该层。
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公开(公告)号：US20070239305A1
公开(公告)日：2007-10-11
申请号：US11390696
申请日：2006-03-28
IPC分类号： G06F19/00
摘要： Process control systems and methods for semiconductor device manufacturing are disclosed. A plurality of feedback and feed-forward loops are used to accurately control the critical dimension (CD) of features formed on material layers of semiconductor devices. Semiconductor devices with features having substantially the same dimension for each die across the surface of a wafer may be fabricated using the novel process control systems and methods described herein.
摘要翻译： 公开了用于半导体器件制造的工艺控制系统和方法。 使用多个反馈和前馈环来精确地控制在半导体器件的材料层上形成的特征的临界尺寸（CD）。 可以使用本文所述的新颖的工艺控制系统和方法来制造具有对于晶片表面上的每个管芯具有基本相同尺寸的特征的半导体器件。
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公开(公告)号：US20080176344A1
公开(公告)日：2008-07-24
申请号：US11625575
申请日：2007-01-22
CPC分类号： H01L21/32137 , H01L22/12
摘要： A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.
摘要翻译： 公开了一种用于制造半导体器件的方法，其包括确定设置在工件上的材料层中的图案的尺寸或其他物理特性，以及使用与所述尺寸相关的信息来蚀刻所述材料层。 还公开了一种用于制造半导体器件的系统，该半导体器件包括被配置为蚀刻层以限定该层中的图案的第一蚀刻系统，以及被配置为测量该图案的物理特性的第二蚀刻系统，基于 物理特性，并根据蚀刻控制参数刻蚀该层。
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公开(公告)号：US08349528B2
公开(公告)日：2013-01-08
申请号：US13164139
申请日：2011-06-20
IPC分类号： G03F1/00
CPC分类号： H01L21/28123 , H01L21/32134 , H01L21/32137
摘要： Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
摘要翻译： 公开了半导体器件及其制造方法。 多个特征形成在工件上，多个特征位于工件的第一区域和第二区域中。 第一区域中的特征具有第一横向尺寸，并且第二区域中的特征具有第二横向尺寸，其中第二横向尺寸大于第一横向尺寸。 第一区域被掩蔽，并且第二区域中的特征的第二横向尺寸减小。
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公开(公告)号：US08007985B2
公开(公告)日：2011-08-30
申请号：US11343161
申请日：2006-01-30
IPC分类号： G03F7/20
CPC分类号： H01L21/28123 , H01L21/32134 , H01L21/32137
摘要： Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
摘要翻译： 公开了半导体器件及其制造方法。 多个特征形成在工件上，多个特征位于工件的第一区域和第二区域中。 第一区域中的特征具有第一横向尺寸，并且第二区域中的特征具有第二横向尺寸，其中第二横向尺寸大于第一横向尺寸。 第一区域被掩蔽，并且第二区域中的特征的第二横向尺寸减小。
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公开(公告)号：US20070178388A1
公开(公告)日：2007-08-02
申请号：US11343161
申请日：2006-01-30
CPC分类号： H01L21/28123 , H01L21/32134 , H01L21/32137
摘要： Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
摘要翻译： 公开了半导体器件及其制造方法。 多个特征形成在工件上，多个特征位于工件的第一区域和第二区域中。 第一区域中的特征具有第一横向尺寸，并且第二区域中的特征具有第二横向尺寸，其中第二横向尺寸大于第一横向尺寸。 第一区域被掩蔽，并且第二区域中的特征的第二横向尺寸减小。
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公开(公告)号：US07674350B2
公开(公告)日：2010-03-09
申请号：US11625575
申请日：2007-01-22
CPC分类号： H01L21/32137 , H01L22/12
摘要： A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.
摘要翻译： 公开了一种用于制造半导体器件的方法，其包括确定设置在工件上的材料层中的图案的尺寸或其他物理特性，以及使用与所述尺寸相关的信息来蚀刻所述材料层。 还公开了一种用于制造半导体器件的系统，该半导体器件包括被配置为蚀刻层以限定该层中的图案的第一蚀刻系统，以及被配置为测量该图案的物理特性的第二蚀刻系统，基于 物理特性，并根据蚀刻控制参数刻蚀该层。
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9.发明申请Method for Manufacturing a Semiconductor Device Having Doped and Undoped Polysilicon Layers 有权具有掺杂和未掺杂多晶硅层的半导体器件的制造方法公开(公告)号：US20110031563A1
公开(公告)日：2011-02-10
申请号：US12910239
申请日：2010-10-22
IPC分类号： H01L29/49
CPC分类号： H01L29/4916 , H01L21/28035 , H01L29/78
摘要： Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
摘要翻译： 描述用于制造半导体器件的方法的各种说明性实施例。 这些方法可以包括例如在衬底上形成第一多晶硅层，其中第一多晶硅层包括掺杂部分，并且在第一多晶硅层的表面上形成第二多晶硅层。 而且，描述了半导体器件的各种说明性实施例，其可以通过本文所述的各种方法来制造。
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公开(公告)号：US08697339B2
公开(公告)日：2014-04-15
申请号：US13081377
申请日：2011-04-06
申请人： Haoren Zhuang , Chong Kwang Chang , Alois Gutmann , Jingyu Lian , Matthias Lipinski , Len Yuan Tsou , Helen Wang
发明人： Haoren Zhuang , Chong Kwang Chang , Alois Gutmann , Jingyu Lian , Matthias Lipinski , Len Yuan Tsou , Helen Wang
IPC分类号： G03F7/20
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/84
摘要： Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. A polymer material is disposed over the masking material. The masking material and the polymer layer are used to pattern the material layer of the workpiece.
摘要翻译： 公开了制造半导体器件的方法。 一个优选实施例是一种处理半导体器件的方法。 该方法包括提供具有设置在其上的待图案化材料层的工件。 在工件的材料层上形成掩模材料。 掩模材料包括下部和设置在下部上的上部。 用第一图案对掩模材料的上部进行图案化。 聚合物材料设置在掩蔽材料上方。 掩模材料和聚合物层用于对工件的材料层进行图案化。
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