公开(公告)号：US06558703B1

公开(公告)日：2003-05-06

申请号：US09214318

申请日：1999-01-04

申请人： Christer Karlsson ,  Per Johan Lundberg ,  Adam Rosinski ,  Malin Söderbom

发明人： Christer Karlsson ,  Per Johan Lundberg ,  Adam Rosinski ,  Malin Söderbom

IPC分类号： A61K914

CPC分类号： A61K9/1617 ,  A61K9/143 ,  A61K9/1611 ,  A61K38/005

摘要： A drug delivery system for oral administration in solid dry form of a greasy/oily/sticky substance and a pharmaceutically active substance or a pharmaceutically active substance which itself is greasy/oily/sticky characterized by having a plurality of porous inorganic particles of small size incorporated with considerable amounts of greasy/oily/sticky substances and having fast release characteristics and a process for the preparation of such porous inorganic particles containing greasy/oily/sticky substances.

摘要翻译： 用于口服给药的药物递送系统，其为固体干燥形式的油腻/油/粘性物质和药物活性物质或药物活性物质，其本身为油腻/油性/粘性，其特征在于具有多个小尺寸的多孔无机颗粒 具有相当量的油腻/油性/粘性物质并具有快速释放特性，以及制备这种含油腻/油/粘性物质的多孔无机颗粒的方法。

公开(公告)号：US06555138B1

公开(公告)日：2003-04-29

申请号：US09214317

申请日：1999-01-04

申请人： Christer Karlsson ,  Per Johan Lundberg ,  Adam Rosinski ,  Malin Söderbom

发明人： Christer Karlsson ,  Per Johan Lundberg ,  Adam Rosinski ,  Malin Söderbom

IPC分类号： A61K916

CPC分类号： A61K31/663 ,  A61K9/1641 ,  A61K31/4422

摘要： A drug delivery system for oral administration in solid dry form of greasy/oily/sticky substance(s) and pharmaceutically active substance(s) or pharmaceutically active substance(s) which itself/themselves is/are greasy/oily/sticky) characterized by having a plurality of solid, polymeric matrix beads comprising considerable amounts of greasy/oily/sticky substances and having fast release characteristics and a process for the preparation of such solid, polymeric matrix beads comprising greasy/oily/sticky substances.

摘要翻译： 用于以固体干燥形式的油性/油性/粘性物质和其本身/油性/油性/粘性的药物活性物质或药物活性物质或药物活性物质口服给药的药物递送系统，其特征在于 其具有包含相当量的油腻/油/粘性物质并且具有快速释放特性的多个固体聚合物基质珠粒，以及制备包含油腻/油/粘性物质的固体聚合物基质珠粒的方法。

公开(公告)号：US6086919A

公开(公告)日：2000-07-11

申请号：US522267

申请日：1995-09-12

申请人： Brigitte Bauer ,  Christer Karlsson ,  Per Johan Lundberg ,  Berit Nilsson ,  Anders Sandberg ,  Alfred Sickmuller

发明人： Brigitte Bauer ,  Christer Karlsson ,  Per Johan Lundberg ,  Berit Nilsson ,  Anders Sandberg ,  Alfred Sickmuller

IPC分类号： A61K38/05 ,  A61K9/22 ,  A61K9/24 ,  A61K9/48 ,  A61K31/40 ,  A61K31/44 ,  A61K38/00 ,  A61K38/55 ,  A61P9/00 ,  A61P9/12 ,  A61P43/00 ,  A61R9/14

CPC分类号： A61K9/4808 ,  A61K38/556 ,  A61K9/209

摘要： The invention is directed to a pharmaceutical composition which is a combination of the ACE inhibitor ramipril and a calcium antagonist of one of the dihydropyridine type compounds felodipine, nitrendipine, nifedipine and lacidipine. The pharmaceutical composition is for use in the therapy and treatment of hypertension.

摘要翻译： PCT No.PCT / SE95 / 00972 Sec。 371 1995年9月12日第 102（e）1995年9月12日PCT PCT 1995年8月30日PCT公布。 出版物WO96 / 07400 日期1996年3月14日本发明涉及一种药物组合物，其是ACE抑制剂雷米普利和二氢吡啶类化合物非洛地平，尼群地平，硝苯吡啶和拉西地平之一的钙拮抗剂的组合。 该药物组合物用于治疗和治疗高血压。

公开(公告)号：US20140210026A1

公开(公告)日：2014-07-31

申请号：US14128011

申请日：2011-06-27

申请人： Christer Karlsson ,  Olle Jonny Hagel ,  Jakob Nilsson ,  Per Bröms

发明人： Christer Karlsson ,  Olle Jonny Hagel ,  Jakob Nilsson ,  Per Bröms

IPC分类号： H01L23/00 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16

CPC分类号： H01L27/11507 ,  G11B9/02 ,  G11C11/161 ,  G11C11/22 ,  H01L23/562 ,  H01L27/0248 ,  H01L27/11502 ,  H01L27/1203 ,  H01L28/40 ,  H01L28/55 ,  H01L28/75 ,  H01L43/02 ,  H01L43/12 ,  H01L51/0591 ,  H01L2924/0002 ,  H01L2924/00

摘要： A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (ΔL) occurring in the protective layer (11) and thus preventing said dimensional change (ΔL) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.

摘要翻译： 铁电存储器单元（1）和包括一个或多个这样的单元（1）的存储器件（100）。 铁电存储单元包括布置在柔性基板（3）上的层叠层（4）。 所述堆叠包括电活性部分（4a）和保护层（11），用于保护电活性部分免受划伤和磨损。 所述电活性部分包括底电极层（5）和顶电极层（9）和在所述电极之间的至少一个铁电存储材料层（7）。 该堆叠还包括布置在顶部电极层（9）和保护层（11）之间的缓冲层（13）。 缓冲层（13）适于至少部分地吸收出现在保护层（11）中的横向尺寸变化（＆Dgr; L），从而防止所述尺寸变化（＆Dgr; L）转移到电活性部件 4a），从而降低在电极之间发生短路的风险。

公开(公告)号：US08184467B2

公开(公告)日：2012-05-22

申请号：US11917571

申请日：2006-06-08

申请人： Per Bröms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Björklid ,  Johan Carlsson ,  Göran Gustafsson ,  Hans Gude Gudesen

发明人： Per Bröms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Björklid ,  Johan Carlsson ,  Göran Gustafsson ,  Hans Gude Gudesen

IPC分类号： G11C11/22

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

摘要翻译： 在非易失性电存储器系统中，存储单元和读/写单元被提供为物理上分离的单元。 存储器单元基于可以通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料。 电极和/或触点被提供在存储器单元中或读/写单元中，并且触点至少总是设置在读/写单元中。 电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。 在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。 存储器单元的存储材料可以被偏振成两个可识别的偏振状态。

公开(公告)号：US07646629B2

公开(公告)日：2010-01-12

申请号：US12010067

申请日：2008-01-18

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans G. Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans G. Gudesen

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

摘要翻译： 在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。 设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。 每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。 在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。 基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

公开(公告)号：US06822890B2

公开(公告)日：2004-11-23

申请号：US10410592

申请日：2003-04-10

申请人： Lars Sundell Torjussen ,  Christer Karlsson

发明人： Lars Sundell Torjussen ,  Christer Karlsson

IPC分类号： G11C1122

CPC分类号： G06F11/08 ,  G11C11/22 ,  G11C29/74

摘要： In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment including at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage. Subsequently bit errors are detected by comparing the identical copies in a memory control logic circuit, which also may be used for caching readout data copies or alternatively be connected with a separate cache memory. Corrected data are written back to the appropriate memory locations holding bit errors when the latter have been detected.

摘要翻译： 在用于将数据存储在非易失性铁电随机存取存储器中的方法中，其中破坏性读出操作之后是重写操作，数据的相同副本被存储在不具有任何公共字线的不同存储器位置中，或者不是常用字线 通用位线。 读取第一字线的第一字线或第一字线的整体，所述字线或所述片段至少包括相同的数据副本的第一副本。 这样读取的数据被重写到存储器位置，并且另外从所讨论的存储器位置传送到适当的高速缓存位置，然后读取以字线或其段的形式的后续存储器位置，并将数据重写到高速缓存位置 。 重复操作，直到数据的所有相同副本已经传送到高速缓存存储器。 随后，通过比较存储器控制逻辑电路中的相同副本来检测位错误，存储器控制逻辑电路也可用于缓存读出的数据副本，或者替代地与单独的高速缓冲存储器连接。 当检测到这些数据被检测到时，校正的数据被写回到保持位错误的适当的存储器位置。

公开(公告)号：US20080198644A1

公开(公告)日：2008-08-21

申请号：US11917571

申请日：2006-06-08

申请人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

发明人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。 存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。 电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。 电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。 读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。 在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。 存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定 通过施加电场的电阻值。

公开(公告)号：US20080151609A1

公开(公告)日：2008-06-26

申请号：US12010067

申请日：2008-01-18

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

IPC分类号： G11C11/00 ,  G11C8/00

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

摘要翻译： 在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。 设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。 每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。 在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。 基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

公开(公告)号：US20070103960A1

公开(公告)日：2007-05-10

申请号：US10579968

申请日：2004-11-24

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gudesen

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.

摘要翻译： 在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用， 到电压脉冲协议。 在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲 的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。 因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。 设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。 在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。