公开(公告)号：US5008217A

公开(公告)日：1991-04-16

申请号：US534772

申请日：1990-06-08

申请人： Christopher J. Case ,  Kin P. Cheung ,  Ruichen Liu ,  Ronald J. Schutz ,  Richard S. Wagner

发明人： Christopher J. Case ,  Kin P. Cheung ,  Ruichen Liu ,  Ronald J. Schutz ,  Richard S. Wagner

IPC分类号： H01L21/28 ,  H01L21/285

CPC分类号： H01L21/28556

摘要： Direct contact to shallow junctions in integrated circuits and interconnection between these contacts is achievable by utilizing a specific aluminum CVD process. In this process the aluminum is deposited utilizing a triisobutyl aluminum precursor onto a substrate having a nucleation layer, e.g. a titanium nitride layer. By appropriate choice of this nucleation layer to control the nucleation of the depositing aluminum, suitable contact is made while avoiding void defects present in the absence of such layer.

公开(公告)号：USRE30244E

公开(公告)日：1980-04-01

申请号：US946843

申请日：1978-09-28

申请人： Frank B. Alexander, Jr. ,  Cesar D. Capio ,  Victor E. Hauser, Jr. ,  Hyman J. Levinstein ,  Cyril J. Mogab ,  Ashok K. Sinha ,  Richard S. Wagner

发明人： Frank B. Alexander, Jr. ,  Cesar D. Capio ,  Victor E. Hauser, Jr. ,  Hyman J. Levinstein ,  Cyril J. Mogab ,  Ashok K. Sinha ,  Richard S. Wagner

IPC分类号： C23C16/509

CPC分类号： C23C16/5096

摘要： An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

公开(公告)号：US4334951A

公开(公告)日：1982-06-15

申请号：US285848

申请日：1981-07-22

申请人： Richard S. Wagner

发明人： Richard S. Wagner

IPC分类号： H01F41/34 ,  C23F1/02 ,  G11C11/14

CPC分类号： H01F41/34

摘要： Magnetic bubble devices having planar geometry are produced by a particular sequence of processing steps. This sequence of processing steps includes the sequential deposition on a garnet material of an insulating material, an electrically conductive material, a second insulating material, and a material such as permalloy. The upmost layer is then patterned by conventional techniques. The pattern thus produced is used as a mask and the exposed underlying insulating layer is removed. The exposed metal conducting layer is then patterned and etched in a pattern different from that of the permalloy and second insulating layers by a process such as selective plasma etching that does not substantially degrade the exposed dielectric material or the permalloy. The results are a device with layers having planar geometry.

摘要翻译： 具有平面几何形状的磁鼓装置由特定的处理步骤序列产生。 这种处理步骤的顺序包括在绝缘材料的石榴石材料上的顺序沉积，导电材料，第二绝缘材料和诸如坡莫合金的材料。 然后通过常规技术对最上层进行图案化。 将由此产生的图案用作掩模，并且去除暴露的下层绝缘层。 然后通过诸如选择性等离子体蚀刻的方法，以与坡莫合金和第二绝缘层的图案不同的图案对裸露的金属导电层进行图案化和蚀刻，该方法基本上不会降低暴露的电介质材料或坡莫合金。 结果是具有平面几何形状的层的装置。

公开(公告)号：US4149905A

公开(公告)日：1979-04-17

申请号：US864379

申请日：1977-12-27

申请人： Hyman J. Levinstein ,  Robert B. Marcus ,  Shyam P. Murarka ,  Richard S. Wagner

发明人： Hyman J. Levinstein ,  Robert B. Marcus ,  Shyam P. Murarka ,  Richard S. Wagner

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/316 ,  H01L21/322

CPC分类号： H01L21/02054 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/31662 ,  Y10S148/024

摘要： Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.

摘要翻译： 在硅晶片的氧化之后发生的许多层叠缺陷通过在氧化之前使用晶片的氩 - 盐酸退火基本上消除。 在进行氧化的同一室中进行的退火从晶片的表面去除杂质，从而限制了在氧化后形成堆垛层错的位置。