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公开(公告)号：US5200733A
公开(公告)日：1993-04-06
申请号：US769209
申请日：1991-10-01
IPC分类号： H01L23/58 , H01L23/60 , H01L27/08 , H01L29/8605
CPC分类号： H01L29/8605 , H01L23/585 , H01L23/60 , H01L27/0802 , H01L2924/0002
摘要： A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
摘要翻译： 集成电路中的电阻器，在电阻器和绝缘层之间具有导电屏蔽层。 电阻器的触点也可以接触导电屏蔽层。 屏蔽层可以在单级或双级多晶硅双极晶体管制造工艺期间形成。
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公开(公告)号：US4876579A
公开(公告)日：1989-10-24
申请号：US301835
申请日：1989-01-26
IPC分类号： H01L29/06 , H01L29/10 , H01L29/808
CPC分类号： H01L29/1066 , H01L29/0692 , H01L29/808
摘要： A JFET having top gate contact regions formed in either one or both of the source and drain regions at and contacting a substantial portion of the edge terminations of the top gate in the source and drain regions. The improved top gate contact region can be used in three and four terminal JFET's.
摘要翻译： 具有顶栅接触区域的JFET，其形成在源极和漏极区域中的一个或两个中，并且与源极和漏极区域中的顶部栅极的边缘端部的大部分接触。 改进的顶栅接触区域可用于三端和四端JFET。
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3.发明授权High frequency analog transistors method of fabrication and circuit implementation 失效高频模拟晶体管的制造和电路实现方法
公开(公告)号：US5807780A
公开(公告)日：1998-09-15
申请号：US462851
申请日：1995-06-05
申请人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
发明人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
IPC分类号： H01L29/73 , H01L21/331 , H01L21/74 , H01L21/8228 , H01L21/84 , H01L27/06 , H01L27/082 , H01L27/12 , H01L29/08 , H01L29/167 , H01L29/732 , H01L29/808 , H01L29/8605 , H01L21/8222
CPC分类号： H01L29/66272 , H01L21/8228 , H01L21/82285 , H01L21/84 , H01L27/0623 , H01L27/082 , H01L27/0826 , H01L27/1203 , H01L29/0821 , H01L29/167 , H01L29/7325 , H01L29/808 , H01L29/8605
摘要： A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
摘要翻译： 用于介质隔离的高频互补模拟双极和CMOS晶体管的制造工艺。 多晶硅非本征基极，具有在内部基底形成之后形成的侧壁间隔物的多晶硅发射体提供高电流增益，大的发射极到基极击穿电压，大的早期电压和高截止频率。
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公开(公告)号：US4352183A
公开(公告)日：1982-09-28
申请号：US201865
申请日：1980-10-29
CPC分类号： H04W84/08
摘要： In order to make optimum use of the available transmission channels in an information transmission system, such as a trunked mobile ratio transmission system, where a number of uncoordinated users may wish to signal to a central control point in addition to using the channels for another purpose, the central control point monitors the channels and, when a channel is or becomes free, sends a command signal on that channel. When a user who is waiting to signal receives the command signal he chooses one of a predetermined number of immediately following time slots in an effectively random manner and sends his request in that slot in digital message form. The central control point sends an acknowledgement in the next time slot if and only if it receives the request in an error-free manner. If a user does not receive such an acknowledgement in response to the transmission of such a request he tries again when he receives the next command. The channel is used for other purposes, if necessary, at times other than those occupied by a command signal plus the subsequent predetermined number of time slots. If requests from more than one user should clash in the same time slot they will not be received by the control point in an error-free manner, this being determined by means of error check bits provided in the request message.
摘要翻译： 为了最佳地利用诸如中继移动比传输系统的信息传输系统中的可用传输信道，除了将信道用于另一目的之外，多个未协调用户可能希望向中心控制点发信号 ，中央控制点监视通道，当通道为空闲时，在该通道上发送命令信号。 当等待信号的用户接收到命令信号时，他以有效的随机方式选择预定数量的紧随后续时隙中的一个，并以数字消息的形式在该时隙中发送他的请求。 当且仅当以无错误的方式接收请求时，中央控制点在下一个时隙发送确认。 如果用户响应于发送这样的请求而没有收到这样的确认，则当他接收到下一个命令时再次尝试。 如果需要，该信道用于其他目的，除了由命令信号占据的时间加上随后的预定数量的时隙之外的时间。 如果来自多个用户的请求在相同的时隙中冲突，则它们将不会以无错误的方式被控制点接收，这通过请求消息中提供的错误校验位来确定。
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公开(公告)号：US4612637A
公开(公告)日：1986-09-16
申请号：US633547
申请日：1984-07-23
CPC分类号： H04W84/08
摘要： A multiple-access communications system for an unlimited user population wherein a system controller continuously transmits Aloha signals on a slot-by-slot basis giving an updated number of time slots available whereby a calling party can select any one of the designated time slots at random. The calling party checks the time slot immediately preceding its selected time slot to ascertain if the current Aloha number is zero (or an equivalent thereof). If it is zero then the calling party reverts to listening for a time slot containing an Aloha number greater than zero. Alternatively if it is not zero the calling party apparatus sends a signal to the system controller in its selected time slot. Multipurpose signalling in each time slot can be carried out by the system controller thereby reducing the overhead on the system and speeding-up the setting-up of calls which may be off-air or non off-air.
摘要翻译： 一种用于无限用户群的多址通信系统，其中系统控制器在逐个时隙的基础上连续发送Aloha信号，给出更新数量的可用时隙，由此主叫方可以随机选择指定的时隙中的任何一个 。 主叫方检查紧接其所选时隙之前的时隙，以确定当前的Aloha号码是否为零（或等效的）。 如果为零，则主叫方返回收听包含大于零的Aloha号码的时隙。 或者，如果不为零，则主叫方设备在其所选择的时隙中向系统控制器发送信号。 每个时隙中的多用途信令可以由系统控制器执行，从而减少系统的开销，并加快建立可能是空中或非空中的呼叫。
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公开(公告)号：US06362665B1
公开(公告)日：2002-03-26
申请号：US09442291
申请日：1999-11-19
IPC分类号： H03B100
CPC分类号： H03K19/00315
摘要： In a bus driver circuit having a floating gate circuit for controlling voltage on the gate of the output driver and a floating well circuit for controlling voltage on the body of the output driver, the improvement comprising a well pull up circuit coupled to the output driver for applying supply voltage to the body during transmission and for applying the output of the floating gate circuit to the body during quiescence.
摘要翻译： 在具有用于控制输出驱动器的栅极上的电压的浮动栅极电路和用于控制输出驱动器的主体上的电压的浮动阱电路的总线驱动器电路中，改进包括耦合到输出驱动器的阱上拉电路， 在传输期间向身体施加电源电压并且在静止期间将浮动门电路的输出施加到身体。
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7.发明授权High frequency analog transistors, method of fabrication and circuit implementation 失效高频模拟晶体管，制造方法和电路实现
公开(公告)号：US5892264A
公开(公告)日：1999-04-06
申请号：US786569
申请日：1997-01-21
申请人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
发明人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
IPC分类号： H01L21/8228 , H01L21/84 , H01L27/082 , H01L27/12 , H01L29/00
CPC分类号： H01L27/0826 , H01L21/8228 , H01L21/84 , H01L27/1203
摘要： A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
摘要翻译： 用于介质隔离的高频互补模拟双极和CMOS晶体管的制造工艺。 多晶硅非本征基极，具有在内部基底形成之后形成的侧壁间隔物的多晶硅发射体提供高电流增益，大的发射极到基极击穿电压，大的早期电压和高截止频率。
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8.发明授权High frequency analog transistors, method of fabrication and circuit implementation 失效高频模拟晶体管，制造方法和电路实现
公开(公告)号：US5668397A
公开(公告)日：1997-09-16
申请号：US131369
申请日：1993-10-04
申请人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
发明人： Christopher K. Davis , George Bajor , James D. Beasom , Thomas L. Crandell , Taewon Jung , Anthony L. Rivoli
IPC分类号： H01L29/73 , H01L21/331 , H01L21/74 , H01L21/8228 , H01L21/84 , H01L27/06 , H01L27/082 , H01L27/12 , H01L29/08 , H01L29/167 , H01L29/732 , H01L29/808 , H01L29/8605 , H01L29/00
CPC分类号： H01L29/66272 , H01L21/8228 , H01L21/82285 , H01L21/84 , H01L27/0623 , H01L27/082 , H01L27/0826 , H01L27/1203 , H01L29/0821 , H01L29/167 , H01L29/7325 , H01L29/808 , H01L29/8605
摘要： A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
摘要翻译： 用于介质隔离的高频互补模拟双极和CMOS晶体管的制造工艺。 多晶硅非本征基极，具有在内部基底形成之后形成的侧壁间隔物的多晶硅发射体提供高电流增益，大的发射极到基极击穿电压，大的早期电压和高截止频率。
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公开(公告)号：US4319222A
公开(公告)日：1982-03-09
申请号：US135962
申请日：1980-03-31
摘要： In order to form a first-come first-served queue in an information transmission system employing a common transmission channel when several transmitters of the system try to gain access to the channel when it is already occupied, without employing a further transmission channel to a point at which an account is kept of the order in which the various transmitters request access, each transmitter which tries to gain access in these circumstances is caused to delay after the channel subsequently free before it actually accesses the channel, this delay being inversely proportional to the time the corresponding transmitter has waited. Thus the transmitter which has waited the longest gains the channel first and causes the other waiting transmitters to continue to wait.
摘要翻译： 为了在采用公共传输信道的信息传输系统中形成先来先服务的队列，当系统的若干发射机已经被占用时尝试获得对该信道的接入，而不需要采用进一步的传输信道 在这种情况下，保持各种发射机请求接入的顺序的帐户，在这些情况下试图获得接入的每个发射机在其实际接入信道之后随后释放之后被延迟，该延迟与 相应的发射机等待的时间。 因此，等待最长的发射机首先增加信道，并使其他等待的发射机继续等待。
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