公开(公告)号：US07145209B2

公开(公告)日：2006-12-05

申请号：US10850980

申请日：2004-05-20

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L29/94 ,  H01L31/062

CPC分类号： H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

摘要翻译： 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US20070057332A1

公开(公告)日：2007-03-15

申请号：US11598844

申请日：2006-11-13

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

摘要翻译： 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US20060114190A1

公开(公告)日：2006-06-01

申请号：US10904547

申请日：2004-11-16

申请人： Chun-Hsiang Fang ,  Shih-Chang Chang

发明人： Chun-Hsiang Fang ,  Shih-Chang Chang

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0465 ,  G09G2320/0242 ,  G09G2320/043 ,  H01L27/3216

摘要： An active matrix organic electro-luminescence device array comprising first sub-pixel regions and second sub-pixel regions defined by scan lines and data lines is provided. Each first sub-pixel region has a first light emitting device, a first control unit and a second control unit therein while each second sub-pixel region has a second light emitting device therein. The first control unit is electrically connected to the first light emitting device for driving the first light emitting device. The second control unit is electrically connected to the second light emitting device for driving the second light emitting device. The second light emitting device having poor light emitting efficiency per unit area is disposed in the second sub-pixel region for increasing its light emitting area so that the first and second light emitting devices may have uniform brightness when drive with the same driving current.

摘要翻译： 提供了包括由扫描线和数据线限定的第一子像素区域和第二子像素区域的有源矩阵有机电致发光器件阵列。 每个第一子像素区域具有第一发光器件，第一控制单元和第二控制单元，而每个第二子像素区域中具有第二发光器件。 第一控制单元电连接到用于驱动第一发光器件的第一发光器件。 第二控制单元电连接到用于驱动第二发光装置的第二发光装置。 在第二子像素区域设置具有每单位面积的发光效率差的第二发光器件，以增加其发光面积，使得当以相同的驱动电流驱动时，第一和第二发光器件可以具有均匀的亮度。

公开(公告)号：US07414604B2

公开(公告)日：2008-08-19

申请号：US10935860

申请日：2004-09-07

申请人： Ching-Wei Lin ,  Shih-Chang Chang ,  Chun-Hsiang Fang

发明人： Ching-Wei Lin ,  Shih-Chang Chang ,  Chun-Hsiang Fang

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G2300/0876 ,  G09G2330/021

摘要： A method and circuit for driving LCD are provided. Because the conventional Vcom inversion drive method cannot be applied in a self-aligned process, the power consumption cannot be reduced when the size of the transistor decreases. The method and circuit provided uses two different AC signals to provide different reference voltages for the storage capacitor and the liquid crystal capacitor in a pixel respectively. Therefore, it can be applied to the self-aligned process to reduce the power consumption.

摘要翻译： 提供了一种用于驱动LCD的方法和电路。 由于传统的Vcom反转驱动方法不能应用于自对准过程中，所以当晶体管的尺寸减小时，功耗不能降低。 所提供的方法和电路使用两个不同的AC信号来分别为像素中的存储电容器和液晶电容器提供不同的参考电压。 因此，它可以应用于自对准过程以降低功耗。

公开(公告)号：US20050258488A1

公开(公告)日：2005-11-24

申请号：US11189479

申请日：2005-07-26

申请人： Shih-Chang Chang ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L29/786 ,  H01L31/0376

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621

摘要： Serially connected thin film transistor (TFT) structure include an active layer shared by an N-type TFT region and a P-type TFT region. A contact hole is formed in an N/P junction between the N-type TFT region and the P-type TFT region and conductive carriers within an N-doped region at one end can be electrically connected to a P-doped region at the other end by a conductive layer formed in the contact hole, without formation of depletion regions at the N/P junction. Moreover, the N-type TFT region or the P-type TFT region is formed using the exposed gate insulating layer in mask regions on both sides of the gate electrode as ion implanting masks and lightly doped drain regions and source/drain regions are also simultaneously formed.

摘要翻译： 串联的薄膜晶体管（TFT）结构包括由N型TFT区域和P型TFT区域共享的有源层。 在N型TFT区域和P型TFT区域之间的N / P结中形成接触孔，并且在一端的N掺杂区域内的导电载体可以在另一端的P掺杂区域电连接 通过在接触孔中形成的导电层而不在N / P结处形成耗尽区。 而且，作为离子注入掩模和轻掺杂漏极区域以及源极/漏极区域也同时在栅电极的两侧的掩模区域中使用暴露的栅极绝缘层形成N型TFT区域或P型TFT区域 形成。

公开(公告)号：US20050074914A1

公开(公告)日：2005-04-07

申请号：US10960183

申请日：2004-10-06

申请人： Shih-Chang Chang ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624

摘要： A method of forming a semiconductor device. A first and a second semiconductor structures are formed. A semiconductor layer is provided. A first masking layer over a first region of the semiconductor layer is provided. The first masking layer comprises a material that provides a permeable barrier to dopant. The semiconductor layer, including the first region covered by the first masking layer, is exposed to a first dopant. The first region covered by the first masking layer is lightly doped with the first dopant in comparison to a second region not covered by the first masking layer.

摘要翻译： 一种形成半导体器件的方法。 形成第一和第二半导体结构。 提供半导体层。 提供了半导体层的第一区域上的第一掩模层。 第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。 包括由第一掩模层覆盖的第一区域的半导体层暴露于第一掺杂剂。 与未被第一掩模层覆盖的第二区域相比，由第一掩模层覆盖的第一区域被轻掺杂第一掺杂剂。

公开(公告)号：US20050057476A1

公开(公告)日：2005-03-17

申请号：US10935860

申请日：2004-09-07

申请人： Ching-Wei Lin ,  Shih-Chang Chang ,  Chun-Hsiang Fang

发明人： Ching-Wei Lin ,  Shih-Chang Chang ,  Chun-Hsiang Fang

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G2300/0876 ,  G09G2330/021

摘要： A method and circuit for driving LCD are provided. Because the conventional Vcom inversion drive method cannot be applied in a self-aligned process, the power consumption cannot be reduced when the size of the transistor decreases. The method and circuit provided uses two different AC signals to provide different reference voltages for the storage capacitor and the liquid crystal capacitor in a pixel respectively. Therefore, it can be applied to the self-aligned process to reduce the power consumption.

摘要翻译： 提供了一种用于驱动LCD的方法和电路。 由于传统的Vcom反转驱动方法不能应用于自对准过程中，所以当晶体管的尺寸减小时，功耗不能降低。 所提供的方法和电路使用两个不同的AC信号来分别为像素中的存储电容器和液晶电容器提供不同的参考电压。 因此，它可以应用于自对准过程以降低功耗。

公开(公告)号：US07388265B2

公开(公告)日：2008-06-17

申请号：US11598844

申请日：2006-11-13

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

摘要翻译： 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US20130154949A1

公开(公告)日：2013-06-20

申请号：US13326713

申请日：2011-12-15

申请人： Abbas Jamshidi Roudbari ,  Young-Bae Park ,  Shih-Chang Chang

发明人： Abbas Jamshidi Roudbari ,  Young-Bae Park ,  Shih-Chang Chang

IPC分类号： G06F3/041 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1339

CPC分类号： G02F1/1339 ,  G02F2202/023 ,  G06F3/041 ,  G06F2203/04103 ,  G06F2203/04113

摘要： An electronic device may have a display such as a liquid crystal display. The display may include a layer of liquid crystal material interposed between a color filter layer and a thin-film transistor layer. The thin-film transistor layer may be provided with capacitive touch sensor electrodes. Wide metal lines on the thin-film transistor layer may be used to inhibit parasitic capacitances during touch sensor mode. The color filter layer may include a layer of black masking material that surrounds the active display area. A light-curable adhesive may used to attach the color filter layer to the thin-film transistor layer. Openings may be formed in the black masking material and in the metal lines on the thin-film transistor layer. The adhesive may be cured by applying ultraviolet light to the adhesive through the openings in the black masking material and through the openings in the metal lines.

摘要翻译： 电子设备可以具有诸如液晶显示器的显示器。 显示器可以包括插在滤色器层和薄膜晶体管层之间的液晶材料层。 薄膜晶体管层可以设置有电容式触摸传感器电极。 薄膜晶体管层上的宽金属线可以用于抑制触摸传感器模式期间的寄生电容。 滤色器层可以包括围绕有源显示区域的黑色掩蔽材料层。 可以使用光固化粘合剂将滤色器层附着到薄膜晶体管层。 可以在黑色掩模材料和薄膜晶体管层上的金属线中形成开口。 通过将紫外光通过黑色掩蔽材料中的开口并通过金属线中的开口施加紫外光，粘合剂可以固化。

公开(公告)号：US20130021289A1

公开(公告)日：2013-01-24

申请号：US13186238

申请日：2011-07-19

申请人： Wei Chen ,  Steven P. Hotelling ,  John Z. Zhong ,  Shih-Chang Chang ,  Stephen S. Poon

发明人： Wei Chen ,  Steven P. Hotelling ,  John Z. Zhong ,  Shih-Chang Chang ,  Stephen S. Poon

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F1/1601 ,  G06F1/1643 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/047 ,  G06F3/04886 ,  G06F2203/04112 ,  H01L27/323 ,  H01L27/3276 ,  H01L27/3288 ,  H01L27/3293 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5281 ,  H01L51/5284 ,  H01L2251/5338

摘要： Displays such as organic light-emitting diode displays may be provided with touch sensing capabilities. A touch sensor may be formed from electrodes located on a thin-film encapsulation layer or one or more sides of a polarizer. A single-sided or double-sided touch sensor panel may be attached to the upper or lower surface of a polarizer. Control circuitry may be used to provide control signals to light-emitting diodes in the display using a grid of control lines. The control lines and transparent electrode structures such as indium tin oxide structures formed on a thin-film encapsulation layer or polarizer may be used as electrodes for a touch sensor. Displays may have active regions and inactive peripheral portions. The displays may have edge portions that are bent along a bend axis that is within the active region to form a borderless display. Virtual buttons may be formed on the bent edge portions.

摘要翻译： 可以提供诸如有机发光二极管显示器的显示器具有触摸感测能力。 触摸传感器可以由位于薄膜封装层或偏振器的一个或多个侧面上的电极形成。 单面或双面触摸传感器面板可以附接到偏振器的上表面或下表面。 控制电路可以用于使用控制线网格来向显示器中的发光二极管提供控制信号。 控制线和形成在薄膜封装层或偏振片上的铟锡氧化物结构之类的透明电极结构可用作触摸传感器的电极。 显示器可能具有活动区域和不活动的外围部分。 显示器可以具有沿着在有效区域内的弯曲轴线弯曲以形成无边界显示器的边缘部分。 虚拟按钮可以形成在弯曲的边缘部分上。