摘要:
A method for monitoring a processing tool in a semiconductor manufacturing facility includes selecting key hardware parameters for a virtual sensor system based on manufacturing data associated with a fabrication tool and collecting manufacturing data associated with the fabrication tool. The method further includes dynamically maintaining the virtual sensor system during the manufacture of a plurality of semiconductor products and using the virtual sensor system and the collected manufacturing data for predicting a condition of a semiconductor product after being processed by the fabrication tool.
摘要:
A method for monitoring a processing tool in a semiconductor manufacturing facility includes selecting key hardware parameters for a virtual sensor system based on manufacturing data associated with a fabrication tool and collecting manufacturing data associated with the fabrication tool. The method further includes dynamically maintaining the virtual sensor system during the manufacture of a plurality of semiconductor products and using the virtual sensor system and the collected manufacturing data for predicting a condition of a semiconductor product after being processed by the fabrication tool.
摘要:
A semiconductor manufacturing information framework to operate a processing tool includes a data acquisition system (DAS), a virtual metrology (VM) system, a fault detection and classification (FDC) system and an advanced process control (APC) system. The DAS is operable to receive data related to the processing of a workpiece by the processing tool or sensors coupled on tool. The VM system is operable to receive the data from the DAS and predict results of the workpiece processed by the processing tool or sensors. The VM system generates at least one first output indicative of the results. The FDC system is operable to receive the data and generate at least one second output indicative of an operating status of the processing tool. The APC system is operable to receive the at least one first or second outputs, and, in response, generate at least one third output to control the processing tool.
摘要:
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
摘要:
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
摘要:
A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.
摘要:
A method to enable wafer result prediction from a batch processing tool, includes collecting manufacturing data from a batch of wafers processed in batch in the batch processing tool, to form a batch processing result; defining a degree of freedom of the batch processing result based on the manufacturing data; and performing an optimal curve fitting by trial and error for an optimal function model of the batch processing result based on the batch processing result.
摘要:
A system, method, and computer readable medium for extracting a key process parameter correlative to a selected device parameter are provided. In an embodiment, the key process parameter is determined using a gene map analysis. The gene map analysis includes grouping highly correlative process parameter and determining the correlation of a group to the selected device parameter. In an embodiment, the groups having greatest correlation to the selected device parameter are displayed in a correlation matrix and/or a gene map.
摘要:
A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.
摘要:
A method to enable wafer result prediction from a batch processing tool, includes collecting manufacturing data from a batch of wafers processed in batch in the batch processing tool, to form a batch processing result; defining a degree of freedom of the batch processing result based on the manufacturing data; and performing an optimal curve fitting by trial and error for an optimal function model of the batch processing result based on the batch processing result.