Near non-adaptive virtual metrology and chamber control
    3.
    发明授权
    Near non-adaptive virtual metrology and chamber control 有权
    近非自适应虚拟计量和室控制

    公开(公告)号:US08433434B2

    公开(公告)日:2013-04-30

    申请号:US12766626

    申请日:2010-04-23

    IPC分类号: G06F19/00

    CPC分类号: G05B13/048

    摘要: Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.

    摘要翻译: 本发明的实施例涉及一种用于晶片处理控制的近非自适应虚拟测量方法。 根据本发明的实施例,一种用于处理控制的方法包括:诊断处理工具的室,其处理晶片以识别密钥室参数,以及如果密钥室参数可以基于密钥室参数来控制室 如果密钥室参数不能被充分地控制,则通过改变为次级预测模型来控制或补偿预测模型。

    Near Non-Adaptive Virtual Metrology and Chamber Control
    4.
    发明申请
    Near Non-Adaptive Virtual Metrology and Chamber Control 有权
    近非自适应虚拟计量和室控制

    公开(公告)号:US20110009998A1

    公开(公告)日:2011-01-13

    申请号:US12766626

    申请日:2010-04-23

    IPC分类号: G05B13/04

    CPC分类号: G05B13/048

    摘要: Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.

    摘要翻译: 本发明的实施例涉及一种用于晶片处理控制的近非自适应虚拟测量方法。 根据本发明的实施例,一种用于处理控制的方法包括:诊断处理工具的室,其处理晶片以识别密钥室参数,以及如果密钥室参数可以基于密钥室参数来控制室 如果密钥室参数不能被充分地控制,则通过改变为次级预测模型来控制或补偿预测模型。

    Method and system for controlling copper chemical mechanical polish uniformity
    5.
    发明申请
    Method and system for controlling copper chemical mechanical polish uniformity 有权
    控制铜化学机械抛光均匀性的方法和系统

    公开(公告)号:US20080305563A1

    公开(公告)日:2008-12-11

    申请号:US11810720

    申请日:2007-06-07

    IPC分类号: H01L21/306

    摘要: A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.

    摘要翻译: 提供了一种通过控制CMP工艺来控制铜沟槽结构中的电阻率均匀性的系统和方法。 优选实施例包括系统和方法,其中可以创建包括至少浆料臂位置的多个CMP工艺配方。 可以估计用于至少一层半导体衬底的一组计量数据,并且可以基于该组计量数据来选择最佳CMP工艺配方。 可以在半导体衬底上实现最佳CMP工艺配方。

    Method and system for controlling copper chemical mechanical polish uniformity
    6.
    发明授权
    Method and system for controlling copper chemical mechanical polish uniformity 有权
    控制铜化学机械抛光均匀性的方法和系统

    公开(公告)号:US08409993B2

    公开(公告)日:2013-04-02

    申请号:US11810720

    申请日:2007-06-07

    IPC分类号: H01L21/302

    摘要: A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.

    摘要翻译: 提供了一种通过控制CMP工艺来控制铜沟槽结构中的电阻率均匀性的系统和方法。 优选实施例包括系统和方法,其中可以创建包括至少浆料臂位置的多个CMP工艺配方。 可以估计用于至少一层半导体衬底的一组计量数据,并且可以基于该组计量数据来选择最佳CMP工艺配方。 可以在半导体衬底上实现最佳CMP工艺配方。

    Clustering for prediction models in process control and for optimal dispatching
    7.
    发明授权
    Clustering for prediction models in process control and for optimal dispatching 有权
    用于过程控制和最优调度的预测模型的聚类

    公开(公告)号:US09037279B2

    公开(公告)日:2015-05-19

    申请号:US12831597

    申请日:2010-07-07

    IPC分类号: G06F19/00 H01L21/00 G05B17/02

    摘要: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.

    摘要翻译: 第一实施例是一种用于半导体处理控制的方法,其包括基于处理数据将处理级的处理工具集群到工具集群中,并且基于工具集群形成用于处理半导体晶片的预测模型。 第二实施例是一种用于半导体处理控制的方法,包括提供第一级工具集群和第二级工具集群之间的集群路由,为每个集群路由分配比较优化等级,以及调度晶片的处理。 比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。 此外,需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理,该优先等级标识一个集群路由以具有最高的晶片处理均匀性,并且不需要高晶片处理均匀性的晶片是 计划沿着另一个集群路由处理。

    Clustering for Prediction Models in Process Control and for Optimal Dispatching
    8.
    发明申请
    Clustering for Prediction Models in Process Control and for Optimal Dispatching 有权
    过程控制和最优调度中预测模型的聚类

    公开(公告)号:US20110060441A1

    公开(公告)日:2011-03-10

    申请号:US12831597

    申请日:2010-07-07

    IPC分类号: G06F17/00

    摘要: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.

    摘要翻译: 第一实施例是一种用于半导体处理控制的方法,其包括基于处理数据将处理级的处理工具集群到工具集群中,并且基于工具集群形成用于处理半导体晶片的预测模型。 第二实施例是一种用于半导体处理控制的方法,包括提供第一级工具集群和第二级工具集群之间的集群路由,为每个集群路由分配比较优化等级,以及调度晶片的处理。 比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。 此外,需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理,该优先等级标识一个集群路由以具有最高的晶片处理均匀性,并且不需要高晶片处理均匀性的晶片是 计划沿着另一个集群路由处理。

    Auto routing for optimal uniformity control
    9.
    发明授权
    Auto routing for optimal uniformity control 有权
    自动布线,实现最佳均匀度控制

    公开(公告)号:US07767471B2

    公开(公告)日:2010-08-03

    申请号:US11830519

    申请日:2007-07-30

    IPC分类号: H01L21/00 G01R31/26

    CPC分类号: H01L22/12

    摘要: A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

    摘要翻译: 提供了一种提高晶片内均匀性的方法。 该方法包括通过第一处理步骤和第二处理步骤形成电子部件,其中电气部件具有目标电参数。 该方法包括提供用于执行第一处理步骤的第一多个生产工具; 提供用于执行所述第二处理步骤的第二多个生产工具; 提供晶片; 使用所述第一多个生产工具之一在所述晶片上执行所述第一工艺步骤; 以及从所述第二多个生产工具中选择包括第一生产工具的第一路线。 由第一路径制造的晶片上的目标电参数的晶片内均匀性大于在第二多个生产工具中包括第二生产工具的第二路线。

    Auto Routing for Optimal Uniformity Control
    10.
    发明申请
    Auto Routing for Optimal Uniformity Control 有权
    自动路由优化均匀性控制

    公开(公告)号:US20090035883A1

    公开(公告)日:2009-02-05

    申请号:US11830519

    申请日:2007-07-30

    IPC分类号: H01L21/66

    CPC分类号: H01L22/12

    摘要: A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

    摘要翻译: 提供了一种提高晶片内均匀性的方法。 该方法包括通过第一处理步骤和第二处理步骤形成电子部件,其中电气部件具有目标电参数。 该方法包括:提供用于执行第一处理步骤的第一多个生产工具; 提供用于执行所述第二处理步骤的第二多个生产工具; 提供晶片; 使用所述第一多个生产工具之一在所述晶片上执行所述第一工艺步骤; 以及从所述第二多个生产工具中选择包括第一生产工具的第一路线。 由第一路径制造的晶片上的目标电参数的晶片内均匀性大于在第二多个生产工具中包括第二生产工具的第二路线。