公开(公告)号：US07172964B2

公开(公告)日：2007-02-06

申请号：US10890622

申请日：2004-07-14

申请人： Chung Chi Ko ,  Syun Ming Jang

发明人： Chung Chi Ko ,  Syun Ming Jang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/0276 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/76831

摘要： A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner in the at least one opening, and forming at least one recess through the nitrogen-free liner, the anti-reflective layer, and at least partially into the low-k layer, the at least one recess is disposed over the at least one opening.

摘要翻译： 一种方法包括在半导体衬底上形成低介电常数（低k）层，在低k层上形成抗反射层，在抗反射层中形成至少一个开口，在低k 在所述至少一个开口中形成无氮衬里，以及通过所述无氮衬里，所述抗反射层形成至少一个凹部，并且至少部分地形成所述低k层，所述至少一个凹部 设置在至少一个开口上。

公开(公告)号：US06638328B1

公开(公告)日：2003-10-28

申请号：US10132441

申请日：2002-04-25

申请人： Shen-Nan Lee ,  Tsu Shih ,  Syun Ming Jang

发明人： Shen-Nan Lee ,  Tsu Shih ,  Syun Ming Jang

IPC分类号： C09G102

CPC分类号： C09K3/1436 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： A bimodal slurry system for a chemical mechanical polishing process including a dispersion comprising a plurality of first particles and a plurality of at least one type of second particles said first particles having a mean particle diameter larger by at least a factor of 3 than a mean particle diameter of the at least one type of second particles said first particles further being compressible.

摘要翻译： 一种用于化学机械抛光方法的双峰淤浆系统，包括分散体，其包含多个第一颗粒和多个至少一种第二颗粒，所述第一颗粒的平均粒径比平均颗粒大至少3倍 所述至少一种类型的第二颗粒的​​直径，所述第一颗粒进一步是可压缩的。

公开(公告)号：US6004883A

公开(公告)日：1999-12-21

申请号：US177186

申请日：1998-10-23

申请人： Chen-Hua Douglas Yu ,  Syun Ming Jang

发明人： Chen-Hua Douglas Yu ,  Syun Ming Jang

IPC分类号： H01L21/768 ,  H01L21/30

CPC分类号： H01L21/76808 ,  H01L2221/1031

摘要： A method for forming a via through a dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed upon the substrate a patterned first dielectric layer which defines a via accessing a contact region formed within the substrate. The patterned first dielectric layer is formed of a first dielectric material which is not susceptible to etching with an oxygen containing plasma. There is then formed upon the patterned first dielectric layer a blanket second dielectric layer which completely covers the patterned first dielectric layer and fills the via. The blanket second dielectric layer is formed of a second dielectric material which is susceptible to etching within the oxygen containing plasma. There is then formed upon the blanket second dielectric layer a blanket hard mask layer which is formed from a hard mask material which is not susceptible to etching within the oxygen containing plasma. There is then formed upon the blanket hard mask layer a patterned photoresist layer which leaves exposed a portion of the blanket hard mask layer greater that an areal dimension of the via and at least partially overlapping the areal dimension of the via. There is then etched while employing a first plasma etch method the blanket hard mask layer to form a patterned hard mask layer defining a first trench formed through the patterned hard mask layer while employing the patterned photoresist layer as a first etch mask layer. The first plasma etch method employs a first etchant gas composition appropriate to the hard mask material from which is formed the blanket hard mask layer. Finally, there is then etched while employing a second plasma etch method the blanket second dielectric layer to form a patterned second dielectric layer having an aperture formed therethrough. The aperture comprises: (1) a second trench corresponding with the first trench; and (2) at least a portion of the first via. The second plasma etch method employs the oxygen containing plasma.