公开(公告)号：US20050013019A1

公开(公告)日：2005-01-20

申请号：US10722603

申请日：2003-11-28

申请人： Chung-Yang Tseng ,  Shih-Chin Gong ,  Reuy-Shing Huang ,  Tong-An Lee ,  Kuo-Chung Chan ,  Hung-Dar Wang

发明人： Chung-Yang Tseng ,  Shih-Chin Gong ,  Reuy-Shing Huang ,  Tong-An Lee ,  Kuo-Chung Chan ,  Hung-Dar Wang

IPC分类号： G02B7/02 ,  H01L21/18 ,  H01L21/76

CPC分类号： B81C3/002 ,  H01L21/187 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/83894 ,  H01L2924/01322 ,  Y10S438/928 ,  Y10S438/975 ,  Y10S438/977

摘要： A method of maintaining photolithographic precision alignment for a wafer after being bonded, wherein two cavities are formed at the rear surface of a top wafer at the position corresponding to alignment marks made on a bottom wafer. The depth of both cavities is deeper than that of a final membrane structure. The top wafer is then bonded to the bottom wafer which already has alignment marks and a microstructure. This bonded wafer is annealed to intensify its bonding strength. After that, a thinning process is applied until the thickness of the top wafer is reduced to thinner than the cavity depth such that the alignment marks are emerged in the top wafer cavities thereby serving as alignment marks for any exposure equipment.

摘要翻译： 在粘合后保持晶片的光刻精密对准的方法，其中在对应于在底部晶片上制成的对准标记的位置处在顶部晶片的后表面处形成两个空腔。 两个腔的深度都比最终膜结构深。 然后将顶部晶片结合到已经具有对准标记和微结构的底部晶片。 退火该接合晶片以增强其结合强度。 之后，施加变薄处理直到顶部晶片的厚度减小到比腔深度更薄，使得对准标记出现在顶部晶片空腔中，从而用作任何曝光设备的对准标记。

公开(公告)号：US06967145B2

公开(公告)日：2005-11-22

申请号：US10722603

申请日：2003-11-28

申请人： Chung-Yang Tseng ,  Shih-Chin Gong ,  Reuy-shing Huang ,  Tong-An Lee ,  Kuo-Chung Chan ,  Hung-Dar Wang

发明人： Chung-Yang Tseng ,  Shih-Chin Gong ,  Reuy-shing Huang ,  Tong-An Lee ,  Kuo-Chung Chan ,  Hung-Dar Wang

IPC分类号： G02B7/02 ,  H01L21/18 ,  H01L21/76

CPC分类号： B81C3/002 ,  H01L21/187 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/83894 ,  H01L2924/01322 ,  Y10S438/928 ,  Y10S438/975 ,  Y10S438/977

摘要： A method of maintaining photolithographic precision alignment for a wafer after being bonded, wherein two cavities are formed at the rear surface of a top wafer at the position corresponding to alignment marks made on a bottom wafer. The depth of both cavities is deeper than that of a final membrane structure. The top wafer is then bonded to the bottom wafer which already has alignment marks and a microstructure. This bonded wafer is annealed to intensify its bonding strength. After that, a thinning process is applied until the thickness of the top wafer is reduced to thinner than the cavity depth such that the alignment marks are emerged in the top wafer cavities thereby serving as alignment marks for any exposure equipment.

公开(公告)号：US06864176B2

公开(公告)日：2005-03-08

申请号：US10155008

申请日：2002-05-28

申请人： Hung-Dar Wang ,  Ruey-Shing Huang ,  Shih-Chin Gong ,  Chung-Yang Tseng

发明人： Hung-Dar Wang ,  Ruey-Shing Huang ,  Shih-Chin Gong ,  Chung-Yang Tseng

IPC分类号： G01B11/06 ,  B24B37/04 ,  B24B49/03 ,  B24B49/12 ,  C23F1/02 ,  H01L21/304 ,  H01L23/544 ,  H01L21/302

CPC分类号： B24B37/005 ,  H01L22/34

摘要： A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.

摘要翻译： 一种用于通过各向异性蚀刻在硅晶片衬底上制造厚度检查图案的硅晶片厚度测量方法，然后用抛光机抛光晶片; 因此可以在抛光进行后获得具有所需厚度的晶片; 上晶片的厚度由所述检查图案确定，然后按厚度分选晶片; 因此可以将其应用于需要具有这种精确厚度的晶片的MEMS微加工器件。

公开(公告)号：US06838303B2

公开(公告)日：2005-01-04

申请号：US10390628

申请日：2003-03-19

申请人： Hung-Dar Wang ,  Shih-Chin Gong

发明人： Hung-Dar Wang ,  Shih-Chin Gong

IPC分类号： G01L9/00 ,  H01L21/00

CPC分类号： G01L9/0054

摘要： The present invention relates to a silicon pressure sensor that in need of three strips of piezoresistors on each side and the manufacturing method thereof; wherein, the impurity concentration of the piezoresistors are about 1019-1020 cm−3 in order to reduce the influence of temperature; the lead between the piezoresistors (namely the internal connection lead) is a highly-doping interconnect (about 1021 cm−3) fabricated along the direction with minimum piezoresistance coefficient; with regard to the connection circuit for connecting the piezoresistors with the external Wheatstone bridge circuit (namely the external connection circuit), of which one end near the inner side of the membrane is also fabricated along the direction with minimum piezoresistance coefficient, and another end of the lead near the edge of the membrane is a interconnect that is perpendicular to the diaphragm, and is connected out to the external circuit; with this structure, the four resistors of the Whetstone bridge are balanced and symmetrized, thus the zero offset caused by the variations in resistance of the bridge can be reduced in order to simplify the signal-processing circuit.

公开(公告)号：US20130301201A1

公开(公告)日：2013-11-14

申请号：US13832033

申请日：2013-03-15

申请人： Wei-Chih Hsu ,  Shi-Kuan Chen ,  Hong-Tien Wang ,  Yung-Hsiang Chen ,  Shih-Chin Gong ,  Yung-Ming Tien ,  Chun-Huang Yu ,  Chao-Tung Hsu ,  Jui-Che Hsu ,  Chih-Yin Lai ,  Chia-Sheng Liu

发明人： Wei-Chih Hsu ,  Shi-Kuan Chen ,  Hong-Tien Wang ,  Yung-Hsiang Chen ,  Shih-Chin Gong ,  Yung-Ming Tien ,  Chun-Huang Yu ,  Chao-Tung Hsu ,  Jui-Che Hsu ,  Chih-Yin Lai ,  Chia-Sheng Liu

IPC分类号： H05K5/02 ,  F16M11/00

CPC分类号： H05K5/0221 ,  F16M11/00 ,  G06F1/1632

摘要： A portable electronic device adapted to be detachably connected to a cradle having a containing cavity is provided, wherein an inner wall of the containing cavity has a recess. The portable electronic device includes a body and a locking-and-releasing mechanism disposed in the body and including a driving unit and a latch. The driving unit is disposed in the body. The latch is connected to the driving unit and suitable for being driven by the driving unit to protrude out of the body or hide in the body. When the portable electronic device is disposed in the containing cavity, the driving unit drives the latch to protrude out of the body and be engaged with the recess. When the portable electronic device is going to be detached from the containing cavity, the driving unit drives the latch to be disengaged from the recess and move back in the body.

摘要翻译： 提供了一种适于可拆卸地连接到具有容纳腔的托架的便携式电子设备，其中容纳腔的内壁具有凹部。 便携式电子设备包括主体和设置在主体中并包括驱动单元和闩锁的锁定和释放机构。 驱动单元设置在身体中。 闩锁连接到驱动单元并且适于被驱动单元驱动以从身体突出或隐藏在身体中。 当便携式电子设备设置在容纳空腔中时，驱动单元驱动闩锁突出到主体外并与凹槽接合。 当便携式电子设备将从容纳腔体分离时，驱动单元驱动闩锁以从凹部脱离并在身体中向后移动。

公开(公告)号：US20080083958A1

公开(公告)日：2008-04-10

申请号：US11620156

申请日：2007-01-05

申请人： Wen-Chieh Wei ,  Hong-Ching Her ,  Shih-Chin Gong ,  Chih-Wei Chang

发明人： Wen-Chieh Wei ,  Hong-Ching Her ,  Shih-Chin Gong ,  Chih-Wei Chang

IPC分类号： H01L29/84

CPC分类号： H04R19/005 ,  B81B7/0064 ,  B81B2201/0257 ,  B81B2207/012 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/15151 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/19105 ,  H04R19/04 ,  H01L2924/00012

摘要： A micro-electromechanical system package includes a substrate, a set of components, at least one solder pad, a frame, a peripheral shield and a top shield. The set is provided on the substrate. At least one solder pad is attached to the substrate opposite to the set. A frame is provided on the substrate. A peripheral shield is provided on the substrate around the set. The isolative stuff seals the set. The isolative stuff defines a tunnel. The top shield is provided on the isolative stuff for shielding the set from electromagnetic interference. The top shield includes a column inserted through the tunnel and connected to the solder pad.

摘要翻译： 微机电系统封装包括基板，一组部件，至少一个焊盘，框架，外围屏蔽和顶盖。 该组件设置在基板上。 至少一个焊盘附着到与该组相对的基板上。 在基板上设置框架。 设置在基板周围的外围屏蔽层。 隔离的东西密封套。 隔离物定义了隧道。 在隔离材料上提供顶部屏蔽，以防止电磁干扰。 顶部屏蔽包括通过隧道插入并连接到焊盘的柱。

公开(公告)号：US20100111344A1

公开(公告)日：2010-05-06

申请号：US12264967

申请日：2008-11-05

申请人： Chih Sun ,  Shih-Chin Gong

发明人： Chih Sun ,  Shih-Chin Gong

IPC分类号： H04R11/04

CPC分类号： H04R19/005 ,  B81B7/0029 ,  B81B2201/0257 ,  H04R2201/003

摘要： A silicon-based microphone structure, flip-chip mounted a substrate, has a backside and a via hole formed on the backside. A conductive layer covers the backside and the inner walls of the via hole. A solder ring is attached to the silicon-based microphone structure and electrically connected to the conductive layer.

摘要翻译： 基于硅的麦克风结构，安装有底片的倒装芯片具有形成在背面的背面和通孔。 导电层覆盖通孔的背面和内壁。 焊锡环连接到硅基麦克风结构并电连接到导电层。

公开(公告)号：US20140049147A1

公开(公告)日：2014-02-20

申请号：US13968437

申请日：2013-08-16

申请人： Chun-Te Shen ,  Yung-Ming Tien ,  Chih-Tarng Chuang ,  Hong-Tien Wang ,  Shi-Kuan Chen ,  Shih-Chin Gong ,  Yung-Hsiang Chen ,  Wei-Chih Hsu

发明人： Chun-Te Shen ,  Yung-Ming Tien ,  Chih-Tarng Chuang ,  Hong-Tien Wang ,  Shi-Kuan Chen ,  Shih-Chin Gong ,  Yung-Hsiang Chen ,  Wei-Chih Hsu

IPC分类号： H05K5/02

CPC分类号： H05K5/0221 ,  G06F1/1616 ,  G06F1/1654 ,  G06F2200/1637

摘要： An electronic apparatus and a controlling method thereof are provided. A fastened mechanism of the electronic apparatus is configured to secure a first housing and a second housing of the electronic apparatus. An operating object within a sensing range is sensed via a first sensor unit. A first sensing signal is sent to a control unit when the sensor unit sensed the operating object within the sensing range. A control signal is sent to the fastened mechanism for unlocking the fastened mechanism when the control unit receives the first sensing signal.

摘要翻译： 提供一种电子设备及其控制方法。 电子设备的紧固机构构造成固定电子设备的第一壳体和第二壳体。 通过第一传感器单元检测感测范围内的操作对象。 当传感器单元在感测范围内感测到操作对象时，第一感测信号被发送到控制单元。 当控制单元接收到第一感测信号时，控制信号被发送到紧固机构以解锁紧固机构。

公开(公告)号：US08351635B2

公开(公告)日：2013-01-08

申请号：US12264967

申请日：2008-11-05

申请人： Chih Sun ,  Shih-Chin Gong

发明人： Chih Sun ,  Shih-Chin Gong

IPC分类号： H04R11/04

CPC分类号： H04R19/005 ,  B81B7/0029 ,  B81B2201/0257 ,  H04R2201/003

摘要： A silicon-based microphone structure, flip-chip mounted a substrate, has a backside and a via hole formed on the backside. A conductive layer covers the backside and the inner walls of the via hole. A solder ring is attached to the silicon-based microphone structure and electrically connected to the conductive layer.

摘要翻译： 基于硅的麦克风结构，安装有底片的倒装芯片具有形成在背面的背面和通孔。 导电层覆盖通孔的背面和内壁。 焊锡环连接到硅基麦克风结构并电连接到导电层。

公开(公告)号：US20060291674A1

公开(公告)日：2006-12-28

申请号：US11151460

申请日：2005-06-14

申请人： Shih-Chin Gong ,  Zhong-Yuan Lin ,  Yao-Min Huang ,  Cyuan-Sian Cheng ,  Shu-Yuan Hsue

发明人： Shih-Chin Gong ,  Zhong-Yuan Lin ,  Yao-Min Huang ,  Cyuan-Sian Cheng ,  Shu-Yuan Hsue

IPC分类号： H04R25/00

CPC分类号： H04R19/04

摘要： A method of making a silicon-based miniaturized microphone by means of the application of a combination of processes including a semiconductor manufacturing process and a silicon micro-machining technology. A silicon-based miniaturized microphone made by means of this method has a silicon substrate, which defines a resonance cavity, a diaphragm, a backplate having sound holes, and solder pads. This method is easy to perform, and suitable for a mass production to reduce the manufacturing cost.

摘要翻译： 一种通过应用包括半导体制造工艺和硅微加工技术在内的工艺的组合来制造硅基小型化麦克风的方法。 通过该方法制造的基于硅的小型化麦克风具有限定谐振腔的硅衬底，隔膜，具有声孔的背板和焊盘。 该方法易于执行，适合批量生产，降低制造成本。