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公开(公告)号:US6118690A
公开(公告)日:2000-09-12
申请号:US563152
申请日:1995-11-27
Applicant: Ching-Lin Jiang , Clark R. Williams
Inventor: Ching-Lin Jiang , Clark R. Williams
IPC: G06F5/06 , G11C8/16 , G11C11/41 , G11C11/412 , G11C19/28 , G11C11/419
CPC classification number: G06F5/065 , G11C11/41 , G11C11/412 , G11C19/287 , G11C8/16
Abstract: A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.
Abstract translation: 双存储单元存储器包括双存储单元的阵列,每个双存储单元包含第一存储单元和第二存储单元。 第一和第二存储器单元是众所周知的六晶体管静态存储单元,其具有用于将数据直接从每个存储器单元的内部数据节点传送到其对应的互补存储器单元的传输电路,而不需要使用使能晶体管 或与每个双存储单元相关联的位线。
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公开(公告)号:US4912435A
公开(公告)日:1990-03-27
申请号:US404943
申请日:1989-09-07
Applicant: Clark R. Williams , Ching-Lin Jiang
Inventor: Clark R. Williams , Ching-Lin Jiang
CPC classification number: H03B5/06 , H03B5/364 , H03K3/014 , H03K3/3545 , H03L3/00 , H03B2200/0012
Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.
Abstract translation: 一种低功率晶体控制CMOS振荡器,其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。
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3.
公开(公告)号:US4873665A
公开(公告)日:1989-10-10
申请号:US203424
申请日:1988-06-07
Applicant: Ching-Lin Jiang , Clark R. Williams
Inventor: Ching-Lin Jiang , Clark R. Williams
IPC: G06F5/06 , G11C8/16 , G11C11/41 , G11C11/412 , G11C19/28
CPC classification number: G11C11/412 , G06F5/065 , G11C11/41 , G11C19/287 , G11C8/16
Abstract: A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.
Abstract translation: 双存储单元存储器包括双存储单元的阵列,每个双存储单元包含第一存储单元和第二存储单元。 第一和第二存储器单元是众所周知的六晶体管静态存储单元,其具有用于将数据直接从每个存储器单元的内部数据节点传送到其对应的互补存储器单元的传输电路,而不需要使用使能晶体管 或与每个双存储单元相关联的位线。
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公开(公告)号:US5532958A
公开(公告)日:1996-07-02
申请号:US135722
申请日:1993-11-24
Applicant: Ching-Lin Jiang , Clark R. Williams
Inventor: Ching-Lin Jiang , Clark R. Williams
CPC classification number: G06F5/065 , G11C11/41 , G11C11/412 , G11C19/287 , G11C8/16
Abstract: A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.
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公开(公告)号:US5162757A
公开(公告)日:1992-11-10
申请号:US499853
申请日:1990-03-27
Applicant: Clark R. Williams , Ching-Lin Jiang
Inventor: Clark R. Williams , Ching-Lin Jiang
CPC classification number: H03B5/06 , H03B5/364 , H03K3/014 , H03K3/3545 , H03L3/00 , H03B2200/0012
Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during startup.
Abstract translation: 一种低功率晶体控制CMOS振荡器,其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。
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6.
公开(公告)号:US5299156A
公开(公告)日:1994-03-29
申请号:US542689
申请日:1990-06-25
Applicant: Ching-Lin Jiang , Clark R. Williams
Inventor: Ching-Lin Jiang , Clark R. Williams
IPC: G06F5/06 , G11C8/16 , G11C11/41 , G11C11/412 , G11C19/28 , G11C11/419
CPC classification number: G11C11/412 , G06F5/065 , G11C11/41 , G11C19/287 , G11C8/16
Abstract: A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.
Abstract translation: 双存储单元存储器包括双存储单元的阵列,每个双存储单元包含第一存储单元和第二存储单元。 第一和第二存储器单元是众所周知的六晶体管静态存储单元,其具有用于将数据直接从每个存储器单元的内部数据节点传送到其对应的互补存储器单元的传输电路,而不需要使用使能晶体管 或与每个双存储单元相关联的位线。
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公开(公告)号:US5150079A
公开(公告)日:1992-09-22
申请号:US717238
申请日:1991-06-18
Applicant: Clark R. Williams , Ching-Lin Jiang
Inventor: Clark R. Williams , Ching-Lin Jiang
IPC: H03B5/36
CPC classification number: H03B5/364 , H03B2200/0012
Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.
Abstract translation: 一种低功率晶体控制CMOS振荡器,其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。
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公开(公告)号:US4871982A
公开(公告)日:1989-10-03
申请号:US264193
申请日:1988-10-28
Applicant: Clark R. Williams , Ching-Lin Jiang
Inventor: Clark R. Williams , Ching-Lin Jiang
CPC classification number: H03B5/30 , H03B5/06 , H03K3/014 , H03K3/3545 , H03L3/00
Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.
Abstract translation: 一种低功率晶体控制CMOS振荡器,其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。
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公开(公告)号:US5175699A
公开(公告)日:1992-12-29
申请号:US264233
申请日:1988-10-28
Applicant: William J. Podkowa , Clark R. Williams
Inventor: William J. Podkowa , Clark R. Williams
CPC classification number: G04G99/006 , G04G3/00
Abstract: An integrated circuit timekeeper, which uses a hybrid hardware/software architecture, wherein the least significant bits are updated in hardware and the more significant bits are updated in software. This hybrid architecture provides improved power efficiency, layout efficiency, and flexibility in reconfiguration.
Abstract translation: 一种集成电路计时器,其使用混合硬件/软件架构,其中最低有效位在硬件中更新,并且更高有效位在软件中更新。 该混合架构提供了改进的功率效率,布局效率和重新配置的灵活性。
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公开(公告)号:US5050113A
公开(公告)日:1991-09-17
申请号:US208889
申请日:1988-06-17
Applicant: William J. Podkowa , Clark R. Williams
Inventor: William J. Podkowa , Clark R. Williams
CPC classification number: G04G99/006 , G04G3/00
Abstract: A low power timekeeping system utilizes a state machine to first read seconds stored in a RAM and update seconds and then determine if the minutes requires updating. If the minutes do not require updating then the sequencer stops operation until the next update cycle. Similarly, the minutes, hours, days of the week, date of the month, month, and year are updated only as needed in each update cycle thereby lowering the power requirement needed by the timekeeping system.
Abstract translation: 低功率计时系统利用状态机首先读取存储在RAM中的秒数,并更新秒数,然后确定分钟是否需要更新。 如果分钟不需要更新,则定序器将停止运行,直到下一个更新周期。 类似地,分钟,小时,星期几,月份,月份和年份的日期仅在每个更新周期中根据需要进行更新,从而降低计时系统所需的功率需求。
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