SELECTIVE DECOMPOSITION OF NITRIDE SEMICONDUCTORS TO ENHANCE LED LIGHT EXTRACTION
    5.
    发明申请
    SELECTIVE DECOMPOSITION OF NITRIDE SEMICONDUCTORS TO ENHANCE LED LIGHT EXTRACTION 有权
    氮化物半导体的选择性分解以增强LED光提取

    公开(公告)号:US20100148197A1

    公开(公告)日:2010-06-17

    申请号:US12337505

    申请日:2008-12-17

    IPC分类号: H01L21/268 H01L33/00

    摘要: A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.

    摘要翻译: 描述了在LED的模板层内或紧邻LED的模板层内纹理化表面的方法。 该方法使用引导通过基底的纹理激光来分解和凹陷待纹理表面的半导体材料。 通过纹理化表面,减少了模板层内的光捕获。 此外,通过图案化凹坑的布置,可以布置每个凹坑的金属涂层以将电流扩散通过模板层,从而穿过LED的n掺杂区域。

    Laser-induced flaw formation in nitride semiconductors
    6.
    发明授权
    Laser-induced flaw formation in nitride semiconductors 有权
    氮化物半导体中激光诱导的缺陷形成

    公开(公告)号:US08581263B2

    公开(公告)日:2013-11-12

    申请号:US12337561

    申请日:2008-12-17

    IPC分类号: H01L29/72

    摘要: An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.

    摘要翻译: 一个实施方案是在氮化物半导体中诱导缺陷形成的方法和装置。 薄膜结构的区域在与基板的界面处的薄膜层内选择性地分解,以在薄膜结构内以预定图案形成缺陷。 在应力诱导操作期间,缺陷将应力局部集中在预定模式中。 执行应力诱导操作。 应力诱导操作导致薄膜层以预定图案断裂。

    Selective decomposition of nitride semiconductors to enhance LED light extraction
    7.
    发明授权
    Selective decomposition of nitride semiconductors to enhance LED light extraction 有权
    选择性分解氮化物半导体以增强LED光提取

    公开(公告)号:US08470619B2

    公开(公告)日:2013-06-25

    申请号:US12909548

    申请日:2010-10-21

    IPC分类号: H01L21/00

    摘要: A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.

    摘要翻译: 描述了在LED的模板层内或紧邻LED的模板层内纹理化表面的方法。 该方法使用引导通过基底的纹理激光来分解和凹陷待纹理表面的半导体材料。 通过纹理化表面,减少了模板层内的光捕获。 此外,通过图案化凹坑的布置,可以布置每个凹坑的金属涂层以将电流扩散通过模板层,从而穿过LED的n掺杂区域。

    LASER ROUGHENING TO IMPROVE LED EMISSIONS
    8.
    发明申请
    LASER ROUGHENING TO IMPROVE LED EMISSIONS 有权
    激光增强LED排放

    公开(公告)号:US20100151602A1

    公开(公告)日:2010-06-17

    申请号:US12337491

    申请日:2008-12-17

    IPC分类号: H01L21/268

    摘要: An improved method of forming a LED with a roughened surface is described. Traditional methods of roughening a LED surface utilizes strong etchants that require sealing or protecting exposed areas of the LED. The described method uses a focused laser to separate the LED from the substrate, and a second laser to roughen the LED surface thereby avoiding the use of strong etchants. A mild etchant may be used on the laser roughened LED surface to remove unwanted metals.

    摘要翻译: 描述了形成具有粗糙表面的LED的改进方法。 传统的LED表面粗糙化方法使用强蚀刻剂,需要密封或保护LED的暴露区域。 所描述的方法使用聚焦激光器将LED与基板分开,以及第二激光器来使LED表面粗糙化,从而避免使用强蚀刻剂。 激光粗糙化的LED表面可以使用温和的蚀刻剂去除不需要的金属。

    Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction
    9.
    发明申请
    Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction 有权
    氮化物半导体的选择性分解以增强LED光提取

    公开(公告)号:US20110039360A1

    公开(公告)日:2011-02-17

    申请号:US12909548

    申请日:2010-10-21

    IPC分类号: H01L33/58

    摘要: A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.

    摘要翻译: 描述了在LED的模板层内或紧邻LED的模板层内纹理化表面的方法。 该方法使用引导通过基底的纹理激光来分解和凹陷待纹理表面的半导体材料。 通过纹理化表面,减少了模板层内的光捕获。 此外,通过图案化凹坑的布置,可以布置每个凹坑的金属涂层以将电流扩散通过模板层,从而穿过LED的n掺杂区域。

    LASER-INDUCED FLAW FORMATION IN NITRIDE SEMICONDUCTORS
    10.
    发明申请
    LASER-INDUCED FLAW FORMATION IN NITRIDE SEMICONDUCTORS 有权
    在氮化物半导体中激光诱导的FLAW形成

    公开(公告)号:US20100148188A1

    公开(公告)日:2010-06-17

    申请号:US12337561

    申请日:2008-12-17

    IPC分类号: H01L33/00 H01L21/78 H01L29/66

    摘要: An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.

    摘要翻译: 一个实施方案是在氮化物半导体中诱导缺陷形成的方法和装置。 薄膜结构的区域在与基板的界面处的薄膜层内选择性地分解,以在薄膜结构内以预定图案形成缺陷。 在应力诱导操作期间,缺陷将应力局部集中在预定模式中。 执行应力诱导操作。 应力诱导操作导致薄膜层以预定图案断裂。