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1.发明申请公开(公告)号：US20150053897A1
公开(公告)日：2015-02-26
申请号：US14382103
申请日：2013-02-22
Inventor： Axel Maurice , Bérangère Hyot , Peter Reiss
IPC: B01J13/00
CPC classification number: B01J13/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01G30/00 , C01P2002/72 , C01P2002/76 , C01P2004/04 , C01P2004/64 , H01L31/035218 , Y10S977/773 , Y10S977/896 , Y10S977/932 , Y10S977/936 , Y10S977/953
Abstract: The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH3) as a source of antimony.
Abstract translation: 本发明涉及使用三锑化锑（SbH 3）作为锑源制备胶体溶液形式的金属元素的锑化物的纳米粒子的方法。
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公开(公告)号：US20240174921A1
公开(公告)日：2024-05-30
申请号：US18517453
申请日：2023-11-22
Applicant: SAMSUNG ELECTRONICS CO., LTD. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE GRENOBLE ALPES
Inventor： Yuho WON , Yongwook KIM , Peter Reiss , Avijit Saha , Ranjana Yadav
IPC: C09K11/64 , C09K11/62 , G02F1/1335 , H10K50/115 , H10K59/38
CPC classification number: C09K11/642 , C09K11/621 , C09K11/623 , G02F1/133614 , H10K50/115 , H10K59/38 , B82Y20/00
Abstract: A nanocrystal particle includes a Group III-VI compound including gallium and sulfur, wherein the nanocrystal particle is configured to emit a first light, a maximum emission peak of the first light is in a wavelength range of greater than or equal to about 300 nanometers and less than or equal to about 485 nanometers, an absolute quantum efficiency of the nanocrystal particle is greater than or equal to about 26%, and a full width at half maximum of the maximum emission peak of the first light is greater than or equal to about 10 nanometers and less than or equal to about 70 nanometers, when analyzed by photoluminescence spectroscopy.
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公开(公告)号：US10676818B2
公开(公告)日：2020-06-09
申请号：US15316913
申请日：2015-06-12
Inventor： Pascale Chenevier , Peter Reiss , Olga Burchak
IPC: C23C16/24 , C01B33/029 , H01M4/38 , C30B25/00 , C30B29/06 , H01G11/30 , C30B11/12 , C01B33/027 , C30B29/60 , C23C16/01 , C23C16/44 , C30B29/62 , H01M10/0525 , B82Y40/00 , H01M10/052
Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).
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公开(公告)号：US20170114454A1
公开(公告)日：2017-04-27
申请号：US15316913
申请日：2015-06-12
Inventor： Pascale Chenevier , Peter Reiss , Olga Burchak
IPC: C23C16/24 , C23C16/01 , C23C16/44 , H01G11/30 , H01M10/0525 , C30B25/00 , C30B29/06 , C30B29/62 , C01B33/029 , H01M4/38
CPC classification number: C23C16/24 , B82Y40/00 , C01B33/027 , C01B33/029 , C01P2004/16 , C01P2006/40 , C23C16/01 , C23C16/44 , C30B11/12 , C30B25/005 , C30B29/06 , C30B29/60 , C30B29/62 , H01G11/30 , H01M4/386 , H01M10/052 , H01M10/0525 , Y02E60/13
Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).
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