-
公开(公告)号：US08885379B2
公开(公告)日：2014-11-11
申请号：US13764139
申请日：2013-02-11
Applicant: CROCUS Technology SA
Inventor： Jeremy Alvarez-Herault , Yann Conraux , Lucien Lombard
CPC classification number: G11C15/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/046 , G11C2211/5615
Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.
Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器（MRAM-based TCAM）单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线，串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线，使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。
-
公开(公告)号：US11921835B2
公开(公告)日：2024-03-05
申请号：US16982099
申请日：2019-03-18
Applicant: Crocus Technology SA
Inventor： Quentin Stainer , Myckael Mouchel , Yann Conraux
CPC classification number: G06F21/44 , G06G7/12 , H04L9/3278
Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.
-
公开(公告)号：US20210110023A1
公开(公告)日：2021-04-15
申请号：US16982099
申请日：2019-03-18
Applicant: Crocus Technology SA
Inventor： Quentin Stainer , Myckael Mouchel , Yann Conraux
Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.
-
公开(公告)号：US20170249982A1
公开(公告)日：2017-08-31
申请号：US15516085
申请日：2015-10-02
Applicant: CROCUS Technology SA
Inventor： Yann Conraux
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/1673 , G11C11/1693
Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
-
Patent Agency Ranking
公开(公告)号：US10326421B2
公开(公告)日：2019-06-18
申请号：US16084637
申请日：2017-03-15
Applicant: Crocus Technology SA
Inventor： Yann Conraux , Quentin Stainer
Abstract: A magnetoresistive-based signal shaping circuit for audio applications includes: a field emitting device configured for receiving an input current signal from an audio signal source and for generating a magnetic field in accordance with the input current signal, and a first magnetoresistive element having a first electrical resistance and electrically connected in series to a second magnetoresistive element having a second electrical resistance. The magnetoresistive-based signal shaping device provides an output signal across the second magnetoresistive element when an input voltage is applied across the first and second magnetoresistive element in series. The output signal is a function of the electrical resistance and yields a dynamic range compression effect. The first and second electrical resistance vary with the magnetic field in an opposite fashion.
-
6.发明授权公开(公告)号：US09461093B2
公开(公告)日：2016-10-04
申请号：US14437362
申请日：2013-10-11
Applicant: CROCUS Technology SA
Inventor： Yann Conraux
CPC classification number: H01L27/222 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Self-reference-based MRAM element including: first and second magnetic tunnel junctions, each having a magnetoresistance that can be varied; and a field line for passing a field current to vary the magnetoresistance of the first and second magnetic tunnel junctions. The field line includes a first branch and a second branch each branch including cladding. The first branch is arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch is electrically connected in parallel with the first branch and arranged for passing a second portion of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction. The self-referenced MRAM element and an MRAM device including corresponding MRAM elements can use a reduced field current.
Abstract translation: 基于自参考的MRAM元件包括：第一和第二磁性隧道结，每个具有可以变化的磁阻; 以及用于通过场电流以改变第一和第二磁性隧道结的磁阻的场线。 场线包括第一分支和第二分支，每个分支包括包层。 第一分支布置成通过场电流的第一部分以选择性地改变第一磁性隧道结的磁阻，并且第二分支与第一分支并联电连接，并且布置成用于通过场电流的第二部分 以选择性地改变第二磁性隧道结的磁阻。 自参考MRAM元件和包括相应的MRAM元件的MRAM器件可以使用减小的场电流。
-
公开(公告)号：US20190081602A1
公开(公告)日：2019-03-14
申请号：US16084637
申请日：2017-03-15
Applicant: Crocus Technology SA
Inventor： Yann Conraux , Quentin Stainer
Abstract: A magnetoresistive-based signal shaping circuit for audio applications includes: a field emitting device configured for receiving an input current signal from an audio signal source and for generating a magnetic field in accordance with the input current signal, and a first magnetoresistive element having a first electrical resistance and electrically connected in series to a second magnetoresistive element having a second electrical resistance. The magnetoresistive-based signal shaping device provides an output signal across the second magnetoresistive element when an input voltage is applied across the first and second magnetoresistive element in series. The output signal is a function of the electrical resistance and yields a dynamic range compression effect. The first and second electrical resistance vary with the magnetic field in an opposite fashion.
-
公开(公告)号：US09978434B2
公开(公告)日：2018-05-22
申请号：US15516085
申请日：2015-10-02
Applicant: CROCUS Technology SA
Inventor： Yann Conraux
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/1673 , G11C11/1693
Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
-
公开(公告)号：US20130208523A1
公开(公告)日：2013-08-15
申请号：US13764139
申请日：2013-02-11
Applicant: CROCUS TECHNOLOGY SA
Inventor： Jeremy Alvarez-Herault , Yann Conraux , Lucien Lombard
IPC: G11C15/02
CPC classification number: G11C15/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/046 , G11C2211/5615
Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.
Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器（MRAM-based TCAM）单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线，串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线，使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.012 seconds)
