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    PIEZO-ELECTRIC ELEMENT
    2.
    发明申请
    PIEZO-ELECTRIC ELEMENT 有权

    公开(公告)号：US20220279285A1

    公开(公告)日：2022-09-01

    申请号：US17632462

    申请日：2020-07-28

    Applicant: Nisshinbo Micro Devices Inc. ,  DENSO CORPORATION

    Inventor： Hiroyuki KUCHIJI ,  Naoki MASUMOTO ,  Hideo YAMADA ,  Akihiko TESHIGAHARA ,  Atsushi MIZUTANI

    IPC: H04R17/02

    Abstract: A piezo-electric element includes a piezo-electric element part, a support part, and a stretchable film. The piezo-electric element part includes a piezo-electric film and electrodes between which the piezo-electric film is sandwiched in a thickness direction. The support part supports a peripheral portion of the piezo-electric element part. The stretchable film is provided in an oscillation region located inside of the peripheral portion of the piezo-electric element part. The stretchable film also has a higher elasticity than that of the piezo-electric element part.

    PIEZOELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME
    3.
    发明申请
    PIEZOELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME 有权
    压电薄膜及其制造方法

    公开(公告)号：US20160064645A1

    公开(公告)日：2016-03-03

    申请号：US14888278

    申请日：2014-05-22

    Applicant: DENSO CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Akihiko TESHIGAHARA ,  Kazuhiko KANO ,  Morito AKIYAMA ,  Keiko NISHIKUBO

    IPC: H01L41/18 ,  C23C14/46 ,  C23C14/18 ,  C23C14/34

    CPC classification number: H01L41/18 ,  C23C14/0052 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/18 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/46 ,  H01L41/187 ,  H01L41/316

    Abstract: A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

    Abstract translation: 通过溅射形成压电薄膜，其基本上由氮化钪组成。 碳原子含量为2.5原子％以下。 当制造压电薄膜时，在至少存在氮气的气氛中，从碳原子含量为5at％以下的钪铝合金靶材同时在基板上溅射钪和铝。 也可以通过在合金靶材的相对表面上以倾斜角施加离子束来进行溅射。 此外，铝和钪也可以从Sc靶材料和Al靶材料在基板上同时溅射。 结果，可以提供表现出优异的压电性能的压电薄膜及其方法。

    PRESSURE SENSOR
    4.
    发明申请
    PRESSURE SENSOR 审中-公开
    压力传感器

    公开(公告)号：US20160025580A1

    公开(公告)日：2016-01-28

    申请号：US14770207

    申请日：2014-02-04

    Applicant: DENSO CORPORATION

    Inventor： Kouji OOYA ,  Kazuhiko KANO ,  Akihiko TESHIGAHARA ,  Shinji KASHIWADA ,  Takayuki SHIBATA ,  Inao TOYODA

    IPC: G01L9/00

    CPC classification number: G01L9/0025 ,  G01L9/008 ,  G01L19/0681 ,  G01L19/086 ,  G01L19/143

    Abstract: An antenna unit having an antenna coil pattern is disposed in a casing. A sensor unit has a surface acoustic wave detecting element including a first sensing electrode that generates and receives a surface acoustic wave and a first reflector that reflects the surface acoustic wave, which are provided on a substrate configured of a piezoelectric material, and a sensor coil pattern electrically connected to the first sensing electrode and coupled to the antenna coil pattern. The sensor unit is disposed in a pressure receiving portion, and a signal is transmitted between the sensor unit and the antenna unit by wireless communication resulting from a coil coupling.

    Abstract translation: 具有天线线圈图案的天线单元设置在壳体中。 传感器单元具有表面声波检测元件，其包括生成并接收表面声波的第一感测电极和设置在由压电材料构成的基板上的反射表面声波的第一反射器，以及传感器线圈 电连接到第一感测电极并耦合到天线线圈图案。 传感器单元设置在压力接收部分中，并且通过由线圈联接产生的无线通信在传感器单元和天线单元之间传输信号。

    ELEMENT FORMING WAFER AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    ELEMENT FORMING WAFER AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20220254637A1

    公开(公告)日：2022-08-11

    申请号：US17732688

    申请日：2022-04-29

    Applicant: DENSO CORPORATION

    Inventor： Akihiko TESHIGAHARA ,  Megumi SUZUKI

    IPC: H01L21/266 ,  H01L41/314 ,  H01L21/78

    Abstract: A method for manufacturing an element forming wafer includes the steps of: forming a thin layer on a semiconductor wafer having a plurality of chip forming regions; and adjusting stress generated in an element forming portion of the thin layer to have a specified value. The thin layer constitutes an element in each of the plurality of chip forming regions. The step of adjusting the stress includes: arranging a resist on the thin layer; exposing the resist to light using a photomask having openings; forming openings in the resist by developing the resist; and performing ion-implantation using the resist as a mask. The photomask used during the step of exposing the resist to light has a ratio of the openings that is adjusted based on the stress generated in the element forming portion.

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