公开(公告)号：US20180230591A1

公开(公告)日：2018-08-16

申请号：US15751719

申请日：2016-07-14

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Sung Woo CHO ,  Sung Gi KIM ,  Byeong-il YANG ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/02 ,  C23C16/513 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/0245 ,  C23C16/345 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/513 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si—N bond under the condition of lower power and film-forming temperature, by applying an aminosilane derivative having a specific Si—N bond to a plasma atomic layer deposition method.

公开(公告)号：US20200339617A1

公开(公告)日：2020-10-29

申请号：US16760417

申请日：2018-11-01

申请人： DNF CO., LTD.

发明人： Myong Woon KIM ,  Sang Ick LEE ,  Sung Woo CHO ,  Mi Jeong HAN ,  Haeng Don LIM

IPC分类号： C07F15/00 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50 ,  C23C16/18

摘要： Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.