公开(公告)号：US20220275010A1

公开(公告)日：2022-09-01

申请号：US17753170

申请日：2020-08-13

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sung Gi KIM ,  Jeong Joo PARK ,  Tae Seok BYUN ,  Yong Hee KWONE ,  Yeong Hun KIM ,  Haengdon LIM ,  Sang Yong JEON ,  Sang Ick LEE

IPC分类号： C07F7/21 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

摘要： Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

公开(公告)号：US20180230591A1

公开(公告)日：2018-08-16

申请号：US15751719

申请日：2016-07-14

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Sung Woo CHO ,  Sung Gi KIM ,  Byeong-il YANG ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/02 ,  C23C16/513 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/0245 ,  C23C16/345 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/513 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si—N bond under the condition of lower power and film-forming temperature, by applying an aminosilane derivative having a specific Si—N bond to a plasma atomic layer deposition method.

公开(公告)号：US20170125243A1

公开(公告)日：2017-05-04

申请号：US15317920

申请日：2015-06-04

申请人： DNF CO.,LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Jong Hyun KIM ,  Sung Gi KIM ,  Sang Yong JEON ,  Byeong-il YANG ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C01B21/068 ,  C07F7/10

CPC分类号： H01L21/02219 ,  C01B21/068 ,  C07F7/10 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

公开(公告)号：US20220181578A1

公开(公告)日：2022-06-09

申请号：US17435350

申请日：2020-03-06

申请人： DNF CO., LTD

发明人： Myoung Woon KIM ,  Sang Ick LEE ,  Se Jin JANG ,  Sung Gi KIM ,  Jeong Joo PARK ,  Won Mook CHAE ,  A Ra CHO ,  Byeong il YANG ,  Joong Jin PARK ,  Gun Joo PARK ,  Sam Dong LEE ,  Haeng don LIM ,  Sang Yong JEON

IPC分类号： H01L51/52 ,  C23C16/455 ,  C23C16/40 ,  H01L51/56 ,  C23C16/56

摘要： The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

公开(公告)号：US20210147451A1

公开(公告)日：2021-05-20

申请号：US16606168

申请日：2018-04-19

申请人： DNF CO., LTD

发明人： Sung Gi KIM ,  Se Jin JANG ,  Byeong-il YANG ,  Joong Jin PARK ,  Sang-Do LEE ,  Jeong Joo PARK ,  Sam Dong LEE ,  Gun-Joo PARK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C07F7/10 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

公开(公告)号：US20220139704A1

公开(公告)日：2022-05-05

申请号：US17572509

申请日：2022-01-10

申请人： DNF CO., LTD.

发明人： Sung Gi KIM ,  Jeong Joo PARK ,  Joong Jin PARK ,  Se Jin JANG ,  Byeong-il YANG ,  Sang-Do LEE ,  Sam Dong LEE ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C23C16/32 ,  C01B33/18 ,  C01B21/068 ,  C07F7/10 ,  C23C16/455 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36 ,  C09D1/00

摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US20230089296A1

公开(公告)日：2023-03-23

申请号：US17653217

申请日：2022-03-02

申请人： DNF CO., LTD.

发明人： Sung Gi KIM ,  Jeong Joo PARK ,  Joong Jin PARK ,  Se Jin JANG ,  Byeong-il YANG ,  Sang-Do LEE ,  Sam Dong LEE ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C01B33/12 ,  C01B21/068 ,  C07F7/10 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

摘要： Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US20190249296A1

公开(公告)日：2019-08-15

申请号：US16319452

申请日：2017-07-19

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Joong Jin PARK ,  Sung Gi KIM ,  Byeong-il YANG ,  Gun-Joo PARK ,  Jeong Joo PARK ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/345 ,  C07F7/025 ,  C07F7/10 ,  C07F7/21 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature.

公开(公告)号：US20160122369A1

公开(公告)日：2016-05-05

申请号：US14896156

申请日：2014-06-05

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Sung Gi KIM ,  Byeong-il YANG ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： C07F7/10

CPC分类号： C07F7/10

摘要： Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

摘要翻译： 提供了一种新的氨基甲硅烷基胺化合物及其制备方法和使用该方法的含硅薄膜，其中氨基甲硅烷基胺化合物具有热稳定性和高挥发性，并保持在液态 室温下，在处理容易的压力下，通过各种沉积方法形成具有高纯度和优异的物理和电学性质的含硅薄膜。