公开(公告)号：US06587315B1

公开(公告)日：2003-07-01

申请号：US09487691

申请日：2000-01-19

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US06690554B2

公开(公告)日：2004-02-10

申请号：US10337188

申请日：2003-01-06

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US06844998B2

公开(公告)日：2005-01-18

申请号：US10103359

申请日：2002-03-20

申请人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

发明人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

CPC分类号： G11B5/3903 ,  H01L43/08

摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

摘要翻译： 假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离 在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

公开(公告)号：US06643107B1

公开(公告)日：2003-11-04

申请号：US09679724

申请日：2000-10-04

申请人： Naoya Hasegawa ,  Kiyoshi Sato ,  Kenji Honda

发明人： Naoya Hasegawa ,  Kiyoshi Sato ,  Kenji Honda

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/3903 ,  H01F10/3272 ,  H01F41/325

摘要： The invention provides a spin valve thin film element in which output characteristics and the stability of reproduced waveforms are improved, asymmetry is decreased, and the occurrence of side reading is prevented. The spin valve thin film element includes a lamination having an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, and a backed layer composed of a nonmagnetic conductive material, which are laminated on a substrate. Hard bias layers are formed on both sides of the lamination, and orient the magnetization direction of the free magnetic layer in the direction crossing the magnetization direction of the second pinned magnetic layer. Electrode layers are formed on the hard bias layers to supply a sensing current J to the lamination. The electrode layers are formed to extend to the surface of the lamination toward the central portion from both sides of the lamination.

摘要翻译： 本发明提供了一种自旋阀薄膜元件，其中输出特性和再现波形的稳定性得到改善，不对称性降低，并且防止了侧读出现。 自旋阀薄膜元件包括具有反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层和由非磁性导电性构成的背衬层的层压体 材料，其被层压在基底上。 在层叠体的两面形成有硬偏移层，并且在与第二被钉扎磁性层的磁化方向交叉的方向上使自由磁性层的磁化方向取向。 电极层形成在硬偏压层上，以向层压提供感测电流J。 电极层被形成为从层压体的两侧朝向中心部分延伸到层压体的表面。

公开(公告)号：US06538860B1

公开(公告)日：2003-03-25

申请号：US09644720

申请日：2000-08-23

申请人： Yoshihiko Kakihara ,  Kiyoshi Sato

发明人： Yoshihiko Kakihara ,  Kiyoshi Sato

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268

摘要： A magnetoresistive element includes a nonmagnetic conductive layer, first and second ferromagnetic layers which are conductive and which sandwich the nonmagnetic conductive layer, an antiferromagnetic layer magnetically coupled to the first ferromagnetic layer for fixing the magnetization direction of the first ferromagnetic layer, a bias layer magnetically coupled to the second ferromagnetic layer for aligning the magnetization direction of the second ferromagnetic layer in a direction crossing to the magnetization direction of the first ferromagnetic layer, and a pair of electrode layers for applying a sensing current to the first and second ferromagnetic layers and the nonmagnetic conductive layer. The antiferromagnetic layer, the first ferromagnetic layer, the nonmagnetic conductive layer, the second ferromagnetic layer, and the bias layer are deposited in that order. The pair of electrode layers are disposed on both ends of the bias layer, and the bias layer at a position which is not covered by the pair of electrode layers is modified to form a nonmagnetic layer for determining a track width. A method of fabricating the magnetoresistive element is also disclosed.

摘要翻译： 磁阻元件包括非磁性导电层，第一和第二铁磁层，其是导电的并且夹着非磁性导电层;磁铁耦合到第一铁磁层的反铁磁层，用于固定第一铁磁层的磁化方向;磁性层 耦合到所述第二铁磁层，用于在与所述第一铁磁层的磁化方向交叉的方向上对准所述第二铁磁层的磁化方向;以及一对电极层，用于向所述第一和第二铁磁层施加感测电流， 非磁性导电层。 反铁磁层，第一铁磁层，非磁性导电层，第二铁磁层和偏置层以该顺序沉积。 一对电极层设置在偏置层的两端，并且在未被一对电极层覆盖的位置处的偏置层被修改以形成用于确定轨道宽度的非磁性层。 还公开了制造磁阻元件的方法。

公开(公告)号：US5992004A

公开(公告)日：1999-11-30

申请号：US833405

申请日：1997-04-04

申请人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

发明人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.

摘要翻译： 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

公开(公告)号：US5923503A

公开(公告)日：1999-07-13

申请号：US616114

申请日：1996-03-14

申请人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

发明人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.

摘要翻译： 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

公开(公告)号：US06307722B1

公开(公告)日：2001-10-23

申请号：US09237547

申请日：1999-01-26

申请人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

发明人： Kiyoshi Sato ,  Yoshihiko Kakihara ,  Masamichi Saito ,  Toshihiro Kuriyama ,  Toshinori Watanabe

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.

摘要翻译： 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层，使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外，由底部到顶部构成磁阻效应层，非磁性层和横向偏置层的三层膜，或者由自由磁性层，非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜，使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外，纵向偏置层与磁阻效应层具有良好的磁耦合。

公开(公告)号：US07463026B2

公开(公告)日：2008-12-09

申请号：US11679083

申请日：2007-02-26

申请人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

发明人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G01B7/14 ,  H01L43/08

CPC分类号： H04M1/0245 ,  B82Y25/00 ,  G01R33/07 ,  G01R33/093 ,  H04M2250/12

摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

摘要翻译： 磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。 第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。 第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。 因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

公开(公告)号：US06292334B1

公开(公告)日：2001-09-18

申请号：US09364741

申请日：1999-07-30

申请人： Fumihito Koike ,  Kiyoshi Sato ,  Naoya Hasegawa

发明人： Fumihito Koike ,  Kiyoshi Sato ,  Naoya Hasegawa

IPC分类号： G11B539

CPC分类号： G11B5/3903 ,  G11B5/3113 ,  G11B5/3156 ,  G11B5/3967

摘要： A lower shield layer is formed in a multilayered structure in which four magnetic layers are laminated with nonmagnetic intermediate layers held therebetween. The static magnetic coupling produced at the end of each of the magnetic layers can promote the condition to put each of the magnetic layers into the single magnetic domain state. An upper shield layer is also formed in a multilayered structure including two magnetic layers so that the two magnetic layers are put into the single magnetic domain state, and the shield function and core function can simultaneously be improved.

摘要翻译： 下面的屏蔽层形成在多层结构中，其中四个磁性层被层压在其间保持有非磁性中间层。 在每个磁性层的末端产生的静磁耦合可以促进使每个磁性层成为单个磁畴状态的状态。 上层屏蔽层也形成在包括两个磁性层的多层结构中，使得两个磁性层被置于单个磁畴状态，并且可以同时提高屏蔽功能和磁芯功能。