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    Magnetic sensor including bridge circuit having fixed resistance like structure of element
    1.
    发明授权
    Magnetic sensor including bridge circuit having fixed resistance like structure of element 有权
    磁传感器包括具有固定电阻的桥接电路，如元件结构

    公开(公告)号：US07463026B2

    公开(公告)日：2008-12-09

    申请号：US11679083

    申请日：2007-02-26

    申请人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

    发明人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

    IPC分类号： G01R33/09 ,  G01B7/14 ,  H01L43/08

    CPC分类号： H04M1/0245 ,  B82Y25/00 ,  G01R33/07 ,  G01R33/093 ,  H04M2250/12

    摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

    摘要翻译： 磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。 第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。 第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。 因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

    MAGNETIC SENSOR INCLUDING BRIDGE CIRCUIT HAVING FIXED RESISTANCE LIKE STRUCTURE OF ELEMENT
    2.
    发明申请
    MAGNETIC SENSOR INCLUDING BRIDGE CIRCUIT HAVING FIXED RESISTANCE LIKE STRUCTURE OF ELEMENT 有权
    磁性传感器，包括具有固定电阻类型结构的桥接电路

    公开(公告)号：US20080024120A1

    公开(公告)日：2008-01-31

    申请号：US11679083

    申请日：2007-02-26

    申请人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

    发明人： Shinichi Sasaki ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yoshito Sasaki ,  Eiji Umetsu

    IPC分类号： G01B7/30

    CPC分类号： H04M1/0245 ,  B82Y25/00 ,  G01R33/07 ,  G01R33/093 ,  H04M2250/12

    摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

    摘要翻译： 磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。 第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随外部磁场H 1的正方向的磁场强度的变化而变化。 第二磁阻元件的电阻值R变化，并且第一磁阻元件的电阻值不随外部磁场H 2在负方向上的磁场强度的变化而变化。 因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

    EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM
    7.
    发明申请
    EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM 审中-公开
    交联膜，交联膜的制造方法以及包括交联膜的磁感应元件

    公开(公告)号：US20080068767A1

    公开(公告)日：2008-03-20

    申请号：US11943955

    申请日：2007-11-21

    申请人： Ryou Nakabayashi ,  Eiji Umetsu ,  Naoya Hasegawa

    发明人： Ryou Nakabayashi ,  Eiji Umetsu ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/30 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/308 ,  H01F41/325 ,  Y10T29/49021 ,  Y10T29/49032

    摘要： An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.

    摘要翻译： 交换耦合膜包括种子层，反铁磁层和铁磁层。 籽晶层的厚度大于临界厚度，然后通过蚀刻使籽晶层的厚度减小到临界厚度以下。 因此，可以形成从上表面向下表面延伸穿过晶种层的结晶相，和/或可以设定种子层中晶粒平行于层表面的方向上的平均尺寸 大于种子层的厚度。 因此，可以在反铁磁层和铁磁层之间产生大的交换耦合磁场Hex。

    Magnetic detecting element having a self-pinned layer
    8.
    发明授权
    Magnetic detecting element having a self-pinned layer 有权
    磁性检测元件具有自固定层

    公开(公告)号：US07268984B2

    公开(公告)日：2007-09-11

    申请号：US11156868

    申请日：2005-06-20

    申请人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

    发明人： Naoya Hasegawa ,  Masamichi Saito ,  Eiji Umetsu

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having an artificial ferrimagnetic structure are disposed between a magnetostriction-enhancing layer made of a nonmagnetic metal and a nonmagnetic material layer having a higher lattice constant than Cu. CPP magnetic detecting elements allow this structure without reducing the variation in resistance per unit area ΔR·A. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below, thereby more firmly fixing the magnetization of the pinned magnetic layer.

    摘要翻译： 一种CPP磁检测元件，其具有以CIP磁检测元件不允许的结构的磁化被其单轴各向异性固定的钉扎磁性层。 在CPP磁检测元件中，具有人造亚铁磁结构的钉扎磁性层的上表面和下表面设置在由非磁性金属制成的磁致伸缩增强层和具有比Cu更高的晶格常数的非磁性材料层之间。 CPP磁检测元件允许这种结构，而不减少每单位面积DeltaR.A的电阻变化。 因此，可以从上方和下方增加钉扎磁性层的磁致伸缩系数，从而更牢固地固定被钉扎的磁性层的磁化。

    MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER
    9.
    发明申请
    MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER 审中-公开
    具有层压种子层的磁性检测装置

    公开(公告)号：US20070165336A1

    公开(公告)日：2007-07-19

    申请号：US11623671

    申请日：2007-01-16

    申请人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

    发明人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3929 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906

    摘要： A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with a nonmagnetic material layer therebetween and which varies in magnetization by an external magnetic field. A seed layer is provided below the magnetoresistive effect part. The seed layer includes an Al layer laminated on an NiFeCr layer.

    摘要翻译： 提供磁检测装置。 磁检测装置包括具有固定磁性层的磁阻效应部分和与其之间具有非磁性材料层的固定磁性层的自由磁性层，并且由外部磁场改变磁化强度。 种子层设置在磁阻效应部分的下方。 种子层包括层压在NiFeCr层上的Al层。

    Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure
    10.
    发明授权
    Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure 有权
    具有调整多层铁结构自由磁性层第一磁性层电阻分布的磁传感器

    公开(公告)号：US06831817B2

    公开(公告)日：2004-12-14

    申请号：US10267201

    申请日：2002-10-09

    申请人： Naoya Hasegawa ,  Eiji Umetsu

    发明人： Naoya Hasegawa ,  Eiji Umetsu

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/0008 ,  G11B2005/3996

    摘要： A first magnetic layer includes an area which contains an element X (e.g., Cr) and is present in position toward the side of a nonmagnetic intermediate layer from the side near an opposite surface of the first magnetic layer away from an interface between the first magnetic layer and the nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between the first magnetic layer and the nonmagnetic intermediate layer toward the opposite surface of the first magnetic layer and which does not contain the element X. Such an arrangement is able to improve a resistance change rate, to increase a coupling magnetic field based on the RKKY interaction, and to realize satisfactory control of magnetization of a free magnetic layer.

    摘要翻译： 第一磁性层包括含有元素X（例如Cr）的区域，并且从靠近第一磁性层的相对表面的一侧离开非磁性中间层侧的第一磁性层 层和非磁性中间层，以及部分位于从第一磁性层和非磁性中间层之间的界面朝向第一磁性层的相反表面并且不包含元件X的区域中的区域。这样的 能够提高电阻变化率，根据RKKY相互作用增加耦合磁场，实现对自由磁性层的磁化的令人满意的控制。