摘要:
A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要:
To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
摘要:
A resist composition including: a base component which exhibits changed solubility in an alkali developing solution under the action of acid; and an acid-generator component containing an acid generator (B1) consisting of a compound represented by general formula (b1); dissolved in an organic solvent containing an alcohol-based organic solvent having a boiling point of at least 150° C., wherein R7″ to R9″ represents an aryl group or an alkyl group, provided that at least one of R7″ to R9″ represents a substituted aryl group which has been substituted with a group represented by the formula: —O—R70 (R70 represents an organic group), and two of R7″ to R9″ may be mutually bonded to form a ring with the sulfur atom; X represents a hydrocarbon group of 3 to 30 carbon atoms; Q1 represents a divalent linking group containing an oxygen atom; and Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms.
摘要:
A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1′) and/or a compound represented by (b1-1″) (R1″-R3″ represents an aryl group or an alkyl group, provided that at least one of R1″-R3″ represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R1″-R3″ may be mutually bonded to form a ring with the sulfur atom; X represents a C3-C30 hydrocarbon group; Q1 represents a carbonyl group-containing divalent linking group; X10 represents a C1-C30 hydrocarbon group; Q3 represents a single bond or a divalent linking group; Y10 represents —C(═O)— or —SO2—; Y11 represents a C1-C10 alkyl group or a fluorinated alkyl group: Q2 represents a single bond or an alkylene group; and W represents a C2-C10 alkylene group).