摘要:
A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.
摘要:
A resist composition for immersion exposure including: a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid; an acid-generator component (B) which generates acid upon exposure; and a fluorine-containing resin component (F); dissolved in an organic solvent (S), the fluorine-containing resin component (F) including a structural unit (f1) containing a fluorine atom, a structural unit (f2) containing a hydrophilic group-containing aliphatic hydrocarbon group, and a structural unit (f3) derived from an acrylate ester containing a tertiary alkyl group-containing group or an alkoxyalkyl group.
摘要:
A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要:
A resist composition including: a base component which exhibits changed solubility in an alkali developing solution under the action of acid; and an acid-generator component containing an acid generator (B1) consisting of a compound represented by general formula (b1); dissolved in an organic solvent containing an alcohol-based organic solvent having a boiling point of at least 150° C., wherein R7″ to R9″ represents an aryl group or an alkyl group, provided that at least one of R7″ to R9″ represents a substituted aryl group which has been substituted with a group represented by the formula: —O—R70 (R70 represents an organic group), and two of R7″ to R9″ may be mutually bonded to form a ring with the sulfur atom; X represents a hydrocarbon group of 3 to 30 carbon atoms; Q1 represents a divalent linking group containing an oxygen atom; and Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms.
摘要:
A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including: a polymer (A1) including a structural unit (a0) represented by general formula (a0) shown below and no structural unit (a1) derived from an acrylate ester containing an acetal-type acid dissociable, dissolution inhibiting group, exclusive of the structural unit (a0), and a polymer (A2) including the structural unit (a1) and no structural unit (a0).
摘要:
A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0-1) represented by general formula (a0-1) shown below and a structural unit (a0-2) represented by general formula (a0-2) shown below: wherein: R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; each of Y1 and Y3 independently represents an aliphatic cyclic group; Z represents a tertiary alkyl group-containing group or an alkoxyalkyl group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, such that a+b=1 to 3; each of c, d and e independently represents an integer of 0 to 3; each of g and h independently represents an integer of 0 to 3; and i represents an integer of 1 to 3.
摘要翻译:包含在酸作用下表现出增加的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B)的正型抗蚀剂组合物,包括结构单元(a0-1)的树脂组分(A) 由下述通式(a0-1)表示的结构单元(a0-2)和下述通式(a0-2)表示的结构单元(a0-2)表示:其中:R表示氢原子,卤素原子,低级烷基或 卤代低级烷基; Y 1和Y 3各自独立地表示脂族环基; Z表示含叔烷基的基团或烷氧基烷基; a表示1〜3的整数,b表示0〜2的整数,a + b = 1〜3。 c,d和e各自独立地表示0〜3的整数, g和h各自独立地表示0〜3的整数, i表示1〜3的整数。
摘要:
A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).
摘要翻译:一种正性抗蚀剂组合物,其包含在碱的作用下在碱性显影液中的溶解度变化的碱成分(A)和暴露于有机溶剂(S)时产生酸的酸产生剂成分(B),所述碱 含有由侧链上具有含有磺酰基的环状基团的丙烯酸酯衍生的结构单元(a0)的高分子化合物(A1)的组分(A),来源于丙烯酸酯的结构单元(a1) 酸解离,溶解抑制基团和由通式(a5-1)表示的结构单元(a5)(Y1表示脂族烃基; Z表示一价有机基团; a表示1〜3的整数,b表示 0〜2的整数,条件是a + b = 1〜3)。
摘要:
A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要:
A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要:
A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.