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    Modification of etch rates by solid masking materials
    2.
    发明授权
    Modification of etch rates by solid masking materials 失效
    通过固体掩蔽材料修改蚀刻速率

    公开(公告)号：US4243476A

    公开(公告)日：1981-01-06

    申请号：US53488

    申请日：1979-06-29

    申请人： Kie Y. Ahn ,  Daniel E. Cox

    发明人： Kie Y. Ahn ,  Daniel E. Cox

    IPC分类号： C23F4/00 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F1/00

    CPC分类号： C23F1/12 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

    摘要： A method for etching materials in which a solid, located in the vicinity of the substrate, is used to provide reactive species for etching the substrate. In contrast with prior art etching techniques, an ion beam is provided which strikes a solid source located in the vicinity of the substrate. Reactive gas species are given off by the solid source when it is hit by the ion beam and these species etch the substrate. Etch rates can be enhanced or retarded depending upon the composition of the solid mask. The process has particular utility in etching generally active metals such as Ti, Nb, Ta, NiFe, etc. which undergo a large change in etch rate when mixed gases, such as argon plus O.sub.2, CF.sub.4, CO, or CO.sub.2 (singularly or in combination) are used. As an example, solid TEFLON* can be used to surround the substrate during etching in order to generate active species, such as C and F, for etching of materials such as Ti, Si, NiFe, etc. Conductors and dielectrics can also be etched by this technique.* A trademark of E. I. Du Pont de Nemours.

    摘要翻译： 用于蚀刻材料的方法，其中使用位于基板附近的固体来提供用于蚀刻衬底的反应性物质。 与现有技术的蚀刻技术相比，提供了一种离子束，其照射位于基底附近的固体源。 当被离子束击中时，固体源发出反应性气体物质，这些物质蚀刻基底。 根据固体掩模的组成，可以增强或延缓蚀刻速率。 该方法在蚀刻通常活性金属如Ti，Nb，Ta，NiFe等时具有特别的用途，当混合气体如氩气，O 2，CF 4，CO或CO 2（单独地或在 组合）。 例如，固体TEFLON *可用于在刻蚀过程中围绕衬底，以便产生活性物质，如C和F，用于蚀刻诸如Ti，Si，NiFe等材料。导体和电介质也可以被蚀刻 通过这种技术。 * E.D. Du Pont de Nemours的商标。

    Bubble device fabrication
    3.
    发明授权
    Bubble device fabrication 失效
    气泡装置制造

    公开(公告)号：US4272348A

    公开(公告)日：1981-06-09

    申请号：US962251

    申请日：1978-11-20

    申请人： Daniel E. Cox ,  Susan M. Kane ,  John V. Powers

    发明人： Daniel E. Cox ,  Susan M. Kane ,  John V. Powers

    IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  C23C15/00 ,  C23F1/02

    CPC分类号： H01F41/34 ,  G11C19/0808 ,  H01F10/06 ,  Y10T29/49069

    摘要： A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

    摘要翻译： 用于产生需要非常细线宽的微电子结构的单层掩模工艺，例如磁性气泡域装置。 这是使用非常薄的附加电镀掩模的减法干法，以获得最佳的光刻分辨率。 使用非常薄的电镀掩模消除了对分辨率的不利影响的厚抗蚀剂层的需要。 在一个实例中，使用薄的Ti（或Cr）掩模来图案化包括导体层（例如Au）和上覆的软磁性层（例如NiFe）的双层冶金。 使用NiFe掩模对Ti掩模进行减法图案化，NiFe掩模本身通过电镀通过薄的抗蚀剂层进行图案化。 将双层NiFe / Au结构图案化以提供具有高纵横比，良好图案敏锐度和均匀厚度的器件，其中最小特征为1微米或更小。