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    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    2.
    发明授权
    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
    Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极

    公开(公告)号：US06894245B2

    公开(公告)日：2005-05-17

    申请号：US10007367

    申请日：2001-10-22

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K10/00

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    3.
    发明授权
    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 失效
    MERIE等离子体反应器，其顶置RF电极通过电弧抑制调谐到等离子体

    公开(公告)号：US07186943B2

    公开(公告)日：2007-03-06

    申请号：US11105307

    申请日：2005-04-12

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： B23K10/06

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Gas distribution plate electrode for a plasma receptor
    5.
    发明授权
    Gas distribution plate electrode for a plasma receptor 有权
    用于等离子体受体的气体分布板电极

    公开(公告)号：US06677712B2

    公开(公告)日：2004-01-13

    申请号：US10442386

    申请日：2003-05-20

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Gas distribution plate electrode for a plasma reactor
    6.
    发明授权
    Gas distribution plate electrode for a plasma reactor 有权
    用于等离子体反应器的气体分布板电极

    公开(公告)号：US06586886B1

    公开(公告)日：2003-07-01

    申请号：US10027732

    申请日：2001-12-19

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Capacitively coupled plasma reactor with uniform radial distribution of plasma
    7.
    发明授权
    Capacitively coupled plasma reactor with uniform radial distribution of plasma 有权
    电容耦合等离子体反应器具有均匀的等离子体径向分布

    公开(公告)号：US06900596B2

    公开(公告)日：2005-05-31

    申请号：US10235988

    申请日：2002-09-04

    申请人： Jang Gyoo Yang ,  Daniel J. Hoffman ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Melissa Hagen ,  Matthew L. Miller ,  Kang-Lie Chiang ,  Gerardo A. Delgadino

    发明人： Robert B. Hagen

    IPC分类号： H01J37/32 ,  H01J7/24

    CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.

    摘要翻译： 用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的工作表面，用于支撑半导体工件，用于将工艺气体引入到工作气体入口 室和具有偏置功率频率的RF偏置功率发生器。 在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置功率馈电点之间。 介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供 一种提高工作表面等离子体离子密度均匀性的电抗。 根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强 等离子体离子密度在工件周边附近。

    Plasma reactor with spoke antenna having a VHF mode with the spokes in phase
    8.
    发明授权
    Plasma reactor with spoke antenna having a VHF mode with the spokes in phase 失效
    具有辐射天线的等离子体反应器具有VHF模式，辐条处于同相状态

    公开(公告)号：US06667577B2

    公开(公告)日：2003-12-23

    申请号：US10025408

    申请日：2001-12-18

    申请人： Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

    发明人： Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

    IPC分类号： H01J724

    CPC分类号： H01J37/321

    摘要： An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

    摘要翻译： 反应器的RF功率施加器包括内部和外部导电的径向辐条。 一组内导电轮辐径向向外延伸并且与导电柱电连接到导电侧壁。 一组外导电轮辐径向向内延伸到导电柱，并与导电侧壁电连接。 以这种方式，导电辐条的内部和外部组电连接在一起，内部和外部组的辐条与导电外壳的组合具有与导电外壳的高度成反比的基本谐振频率和 内外套导电辐条。 RF源功率发生器耦合在RF功率施加器上并且具有对应于基本谐振频率的RF频率。