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    Gas distribution plate electrode for a plasma reactor
    1.
    发明授权
    Gas distribution plate electrode for a plasma reactor 有权
    用于等离子体反应器的气体分布板电极

    公开(公告)号：US06586886B1

    公开(公告)日：2003-07-01

    申请号：US10027732

    申请日：2001-12-19

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    Gas distribution plate electrode for a plasma receptor
    2.
    发明授权
    Gas distribution plate electrode for a plasma receptor 有权
    用于等离子体受体的气体分布板电极

    公开(公告)号：US06677712B2

    公开(公告)日：2004-01-13

    申请号：US10442386

    申请日：2003-05-20

    申请人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    发明人： Dan Katz ,  Douglas A. Buchberger, Jr. ,  Yan Ye ,  Robert B. Hagen ,  Xiaoye Zhao ,  Ananda H. Kumar ,  Kang-Lie Chiang ,  Hamid Noorbakhsh ,  Shiang-Bau Wang

    IPC分类号： H01J724

    CPC分类号： H01J37/3244

    摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

    摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管 背板，后板和前板结合在一起并形成组件。 组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径 至少一个孔的流速。 此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的， 与孔对齐。

    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    3.
    发明授权
    MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 失效
    MERIE等离子体反应器，其顶置RF电极通过电弧抑制调谐到等离子体

    公开(公告)号：US07186943B2

    公开(公告)日：2007-03-06

    申请号：US11105307

    申请日：2005-04-12

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： B23K10/06

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    5.
    发明授权
    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
    Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极

    公开(公告)号：US06894245B2

    公开(公告)日：2005-05-17

    申请号：US10007367

    申请日：2001-10-22

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K10/00

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Cathode with inner and outer electrodes at different heights
    8.
    发明授权
    Cathode with inner and outer electrodes at different heights 有权
    阴极与不同高度的内外电极

    公开(公告)号：US08607731B2

    公开(公告)日：2013-12-17

    申请号：US12144463

    申请日：2008-06-23

    申请人： Daniel J. Hoffman ,  Douglas A. Buchberger, Jr. ,  Semyon L. Kats ,  Dan Katz

    发明人： Daniel J. Hoffman ,  Douglas A. Buchberger, Jr. ,  Semyon L. Kats ,  Dan Katz

    IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00

    CPC分类号： H01L21/6833

    摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

    摘要翻译： 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。

    CATHODE WITH INNER AND OUTER ELECTRODES AT DIFFERENT HEIGHTS
    9.
    发明申请
    CATHODE WITH INNER AND OUTER ELECTRODES AT DIFFERENT HEIGHTS 有权
    在不同高度的内部和外部电极的阴极

    公开(公告)号：US20090314433A1

    公开(公告)日：2009-12-24

    申请号：US12144463

    申请日：2008-06-23

    申请人： Daniel J. Hoffman ,  Douglas A. Buchberger, JR. ,  Semyon L. Kats ,  Dan Katz

    发明人： Daniel J. Hoffman ,  Douglas A. Buchberger, JR. ,  Semyon L. Kats ,  Dan Katz

    IPC分类号： C23F1/00 ,  H01L21/683

    CPC分类号： H01L21/6833

    摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

    摘要翻译： 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。