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    Plasma reactor with spoke antenna having a VHF mode with the spokes in phase
    1.
    发明授权
    Plasma reactor with spoke antenna having a VHF mode with the spokes in phase 失效
    具有辐射天线的等离子体反应器具有VHF模式，辐条处于同相状态

    公开(公告)号：US06667577B2

    公开(公告)日：2003-12-23

    申请号：US10025408

    申请日：2001-12-18

    申请人： Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

    发明人： Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

    IPC分类号： H01J724

    CPC分类号： H01J37/321

    摘要： An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

    摘要翻译： 反应器的RF功率施加器包括内部和外部导电的径向辐条。 一组内导电轮辐径向向外延伸并且与导电柱电连接到导电侧壁。 一组外导电轮辐径向向内延伸到导电柱，并与导电侧壁电连接。 以这种方式，导电辐条的内部和外部组电连接在一起，内部和外部组的辐条与导电外壳的组合具有与导电外壳的高度成反比的基本谐振频率和 内外套导电辐条。 RF源功率发生器耦合在RF功率施加器上并且具有对应于基本谐振频率的RF频率。

    Methods to avoid unstable plasma states during a process transition
    3.
    发明申请
    Methods to avoid unstable plasma states during a process transition 失效
    在过程转换过程中避免不稳定的等离子体状态的方法

    公开(公告)号：US20070066064A1

    公开(公告)日：2007-03-22

    申请号：US11372752

    申请日：2006-03-10

    申请人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    发明人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    IPC分类号： H01L21/00 ,  G01L21/30 ,  H01L21/302

    CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76807

    摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.

    摘要翻译： 在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。 该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。 在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

    Method to reduce plasma-induced charging damage
    4.
    发明申请
    Method to reduce plasma-induced charging damage 审中-公开
    减少等离子体引起的充电损伤的方法

    公开(公告)号：US20070048882A1

    公开(公告)日：2007-03-01

    申请号：US11366301

    申请日：2006-03-01

    申请人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    发明人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/67253 ,  H01L21/76807

    摘要： In some implementations, a method is provided for inhibiting charge damage in a plasma processing chamber during a process transition from one process step to another process step, including performing a pre-transition compensation of at least one process parameter so as to inhibit charge damage from occurring during the process transition. In some implementations, a method is provided for inhibiting charge damage during a process transition from one process step to another process step, which includes changing at least one process parameter with a smooth non-linear transition. In some implementations, a method is provided which includes sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.

    摘要翻译： 在一些实施方案中，提供了一种用于在从一个工艺步骤转移到另一个工艺步骤的过程转变期间抑制等离子体处理室中的电荷损伤的方法，包括对至少一个工艺参数执行预过渡补偿以便抑制电荷损伤 在过程转换期间发生。 在一些实施方案中，提供了一种用于在从一个处理步骤转移到另一个处理步骤的过程中抑制电荷损伤的方法，其包括通过平滑的非线性跃迁来改变至少一个过程参数。 在一些实施方式中，提供了一种方法，其包括顺序地改变所选择的过程参数，使得在改变下一个所选择的过程参数之前等离子体能够在每次变化之后稳定。

    METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE
    6.
    发明申请
    METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
    限制等离子体和加强流动导管的方法和装置

    公开(公告)号：US20060193102A1

    公开(公告)日：2006-08-31

    申请号：US11381399

    申请日：2006-05-03

    申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    IPC分类号： H01T23/00

    CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

    摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

    摘要翻译： 本发明的实施例一般涉及在等离子体处理室中使用的环形环。 在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。 台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。 环形环可以由诸如碳化硅和铝的导电材料制成。

    Apparatus to confine plasma and to enhance flow conductance
    7.
    发明授权
    Apparatus to confine plasma and to enhance flow conductance 有权
    用于限制等离子体和增强流动电导的装置

    公开(公告)号：US07674353B2

    公开(公告)日：2010-03-09

    申请号：US11531479

    申请日：2006-09-13

    申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

    发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

    摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

    摘要翻译： 本发明的实施方案一般涉及等离子体反应器。 在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。 导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。 台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。 内壁与上外壁和下外壁相对设置。 在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

    Method and apparatus to confine plasma and to enhance flow conductance
    9.
    发明申请
    Method and apparatus to confine plasma and to enhance flow conductance 审中-公开
    限制等离子体和增强流动电导的方法和装置

    公开(公告)号：US20060172542A1

    公开(公告)日：2006-08-03

    申请号：US11046135

    申请日：2005-01-28

    申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    IPC分类号： H01L21/302 ,  C23F1/00 ,  H01L21/461

    CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

    摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.

    摘要翻译： 本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。 该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。 除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压， 如果衬底在加工过程中存在的话。 可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。 通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。 这种等离子体约束的方法被称为阻抗限制。 通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

    Capacitively coupled plasma reactor with magnetic plasma control
    10.
    发明申请
    Capacitively coupled plasma reactor with magnetic plasma control 有权
    具有磁等离子体控制的电容耦合等离子体反应器

    公开(公告)号：US20060157201A1

    公开(公告)日：2006-07-20

    申请号：US11360944

    申请日：2006-02-23

    申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

    摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。