UNDISCOVERABLE PHYSICAL CHIP IDENTIFICATION
    1.
    发明申请
    UNDISCOVERABLE PHYSICAL CHIP IDENTIFICATION 有权
    不合格的物理芯片识别

    公开(公告)号:US20140033330A1

    公开(公告)日:2014-01-30

    申请号:US13561185

    申请日:2012-07-30

    IPC分类号: H03K5/24 G06F21/00

    摘要: Methods and circuits for undiscoverable physical chip identification are disclosed. Embodiments of the present invention provide an intrinsic bit element that comprises two transistors. The two transistors form a pair in which one transistor has a wide variability in threshold voltage and the other transistor has a narrow variability in threshold voltage. The wide variability is achieved by making a transistor with a smaller width and length than the other transistor in the pair. The variation of the threshold voltage of the wide variability transistor means that in the case of copies of intrinsic bit elements being made, some of the “copied” wide variability transistors will have significantly different threshold voltages, causing some of the intrinsic bit elements of a copied chip to read differently than in the original chip from which they were copied.

    摘要翻译: 公开了用于不可发现的物理芯片识别的方法和电路。 本发明的实施例提供了包括两个晶体管的本征位元件。 两个晶体管形成一对,其中一个晶体管具有很大的阈值电压变化,另一个晶体管的阈值电压变化很小。 通过制造具有比该对中的另一个晶体管更小的宽度和长度的晶体管来实现广泛的变化。 宽变化率晶体管的阈值电压的变化意味着在内部位元素复制的情况下,一些“复制的”宽变化性晶体管将具有明显不同的阈值电压,导致一些固有位元素 复制芯片的读取方式与原始芯片的复制方式不同。

    Undiscoverable physical chip identification
    2.
    发明授权
    Undiscoverable physical chip identification 有权
    不可发现的物理芯片识别

    公开(公告)号:US08950008B2

    公开(公告)日:2015-02-03

    申请号:US13561185

    申请日:2012-07-30

    IPC分类号: H03K5/24 G06F21/00 H02H3/24

    摘要: Methods and circuits for undiscoverable physical chip identification are disclosed. Embodiments of the present invention provide an intrinsic bit element that comprises two transistors. The two transistors form a pair in which one transistor has a wide variability in threshold voltage and the other transistor has a narrow variability in threshold voltage. The wide variability is achieved by making a transistor with a smaller width and length than the other transistor in the pair. The variation of the threshold voltage of the wide variability transistor means that in the case of copies of intrinsic bit elements being made, some of the “copied” wide variability transistors will have significantly different threshold voltages, causing some of the intrinsic bit elements of a copied chip to read differently than in the original chip from which they were copied.

    摘要翻译: 公开了用于不可发现的物理芯片识别的方法和电路。 本发明的实施例提供了包括两个晶体管的本征位元件。 两个晶体管形成一对,其中一个晶体管具有很大的阈值电压变化,另一个晶体管的阈值电压变化很小。 通过制造具有比该对中的另一个晶体管更小的宽度和长度的晶体管来实现广泛的变化。 宽变化率晶体管的阈值电压的变化意味着在内部位元素复制的情况下,一些“复制的”宽变化性晶体管将具有明显不同的阈值电压,导致一些固有位元素 复制芯片的读取方式与原始芯片的复制方式不同。