公开(公告)号：US20130187207A1

公开(公告)日：2013-07-25

申请号：US13559499

申请日：2012-07-26

申请人： Daniel TANG ,  Tzu-Shih Yen

发明人： Daniel TANG ,  Tzu-Shih Yen

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66803 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78684

摘要： A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.

摘要翻译： 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源区和漏区以暴露鳍的第一区。 然后第一区域的一部分掺杂有掺杂剂。

公开(公告)号：US20130026539A1

公开(公告)日：2013-01-31

申请号：US13192378

申请日：2011-07-27

申请人： Daniel TANG ,  Tzu-Shih Yen

发明人： Daniel TANG ,  Tzu-Shih Yen

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

摘要： A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

公开(公告)号：US20140054679A1

公开(公告)日：2014-02-27

申请号：US13592191

申请日：2012-08-22

申请人： Daniel TANG ,  Tzu-Shih YEN

发明人： Daniel TANG ,  Tzu-Shih YEN

IPC分类号： H01L29/78 ,  H01L21/84 ,  H01L21/336

CPC分类号： H01L29/66803 ,  H01L21/26586 ,  H01L21/823431 ,  H01L29/785

摘要： In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.

摘要翻译： 在掺杂非平面半导体器件中，获得了在其上形成非平面半导体体的衬底。 在非平面半导体本体的区域中执行第一离子注入。 第一离子注入具有第一注入能量和第一注入角度。 在非平面半导体本体的相同区域中执行第二离子注入。 第二离子注入具有第二注入能量和第二注入角度。 第一注入能量可以不同于第二注入能量。 另外，第一植入角度可以不同于第二植入角度。

公开(公告)号：US20090317958A1

公开(公告)日：2009-12-24

申请号：US12486403

申请日：2009-06-17

申请人： Daniel TANG ,  Hong Xiao

发明人： Daniel TANG ,  Hong Xiao

IPC分类号： H01L21/329 ,  C23C14/08 ,  C23C14/06

CPC分类号： H01L45/04 ,  C23C14/06 ,  C23C14/48 ,  H01L27/101 ,  H01L28/24 ,  H01L45/145

摘要： Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.

摘要翻译： 离子注入用于形成忆阻材料和电阻结构与忆阻。 首先，将许多富电子元素原子注入到由过渡金属或非金属制成的层中。 然后，进行处理工艺（例如退火）以将一些富电子元素原子排出该层。 之后，在层内形成一些富含电子的元素空位丰富区域，然后形成忆阻材料。 重要的是，离子注入的使用可以精确控制和灵活调整注入原子的分布，然后可以有效地调整这些耗尽区的数量和分布。 因此，忆阻器材料的质量得到改善。