公开(公告)号：US20090056231A1

公开(公告)日：2009-03-05

申请号：US11895896

申请日：2007-08-28

申请人： Daniela White ,  Jason J. Keleher ,  John Parker

发明人： Daniela White ,  Jason J. Keleher ,  John Parker

IPC分类号： C09K3/14 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The CMP compositions of the invention comprise not more than about 1 percent by weight of a particulate abrasive, a polyelectrolyte, which preferably has a weight average molecular weight of at least about 10,000 grams-per-mole (g/mol), a copper-complexing agent, and an aqueous carrier therefor. The polyelectrolyte can be an anionic polymer (e.g., an acrylate polymer or copolymer) or a cationic polymer (e.g., poly(2-[(methacryloyloxy)ethyl] trimethyl-ammonium halide). When an anionic polyelectrolyte is utilized, the copper-complexing agent preferably comprises an amino polycarboxylate compound (e.g., iminodiacetic acid or a salt thereof). When a cationic polyelectrolyte is utilized, the copper-complexing agent preferably comprises an amino acid (e.g., glycine). Preferably, the particulate abrasive comprises metal oxide such as titanium dioxide or silicon dioxide. Methods of polishing copper-containing substrates with the compositions are also disclosed.

摘要翻译： 本发明的CMP组合物包含不超过约1重量％的颗粒磨料，聚电解质，其优选具有至少约10,000克/摩尔（g / mol）的重均分子量，铜 - 络合剂及其载体。 聚电解质可以是阴离子聚合物（例如，丙烯酸酯聚合物或共聚物）或阳离子聚合物（例如聚（2 - [（甲基丙烯酰氧基）乙基]三甲基 - 卤化铵）），当使用阴离子聚电解质时，铜络合 药剂优选包含氨基多羧酸盐化合物（例如亚氨基二乙酸或其盐）当使用阳离子聚电解质时，铜络合剂优选包含氨基酸（例如甘氨酸），优选颗粒磨料包含金属氧化物 作为二氧化钛或二氧化硅。还公开了用组合物抛光含铜基材的方法。

公开(公告)号：US08057561B2

公开(公告)日：2011-11-15

申请号：US11518674

申请日：2006-09-11

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： C09K3/14 ,  B24D3/02 ,  C09C1/68 ,  B32B5/16 ,  B32B9/00 ,  B32B15/02 ,  B32B17/02 ,  B32B21/02 ,  B32B23/02 ,  B32B27/02 ,  B32B27/38 ,  C08K3/10 ,  C08K3/22 ,  C09D5/08

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1445 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2998

摘要： The invention provides an isolated, particulate polyoxometalate complex comprising a water-soluble cationic polymer and a polyoxometalate compound ionically bound to the cationic polymer. The polyoxometalate compound can be an isopolyoxometalate compound, such as an isopolytungstate, or a heteropolyoxometalate compound. The invention further provides a chemical-mechanical polishing composition comprising a preformed polyoxometalate abrasive, as well as a method of chemically-mechanically polishing a substrate therewith.

摘要翻译： 本发明提供一种分离的颗粒状多金属氧酸盐配合物，其包含水溶性阳离子聚合物和与阳离子聚合物离子结合的多金属氧酸盐化合物。 多金属氧酸盐化合物可以是异多金属氧酸盐化合物，例如异多钨酸盐或杂多金属氧酸盐化合物。 本发明进一步提供了包含预制的多金属氧酸盐研磨剂的化学机械抛光组合物，以及一种用其化学机械抛光基材的方法。

公开(公告)号：US20090134122A1

公开(公告)日：2009-05-28

申请号：US11986921

申请日：2007-11-27

申请人： Daniela White ,  Jason Keleher ,  John Parker

发明人： Daniela White ,  Jason Keleher ,  John Parker

IPC分类号： C09K13/00 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/04 ,  C23F3/06

摘要： The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.

摘要翻译： 本发明提供用于抛光含铜基材的化学机械抛光（CMP）方法和组合物。 本发明的方法需要用本发明的CMP组合物，优选在氧化剂（例如过氧化氢）的存在下研磨含铜基材的表面。 本发明的CMP组合物包含颗粒磨料，铜络合剂，带有酸性OH基团的铜钝化剂和与酸性OH基团1,6关系的另外的氧取代基和水性载体。 本发明的优选组合物包含约0.01至约1重量％的颗粒磨料，约0.1至约1重量％的铜络合剂，约10至约1000ppm的铜钝化剂。

公开(公告)号：US20090090696A1

公开(公告)日：2009-04-09

申请号：US11868744

申请日：2007-10-08

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： B44C1/22 ,  C09K3/14

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer comprising (A) a cationic monomer comprising a quaternary amino group and (B) a nonionic monomer, and (c) water. The invention also provides a method of polishing a substrate using the aforementioned polishing composition.

摘要翻译： 本发明提供一种化学机械抛光组合物，其包含（a）选自氧化铝，二氧化铈，二氧化钛和氧化锆的研磨剂，（b）阳离子共聚物，其包含（A）包含季氨基的阳离子单体和（ B）非离子单体，和（c）水。 本发明还提供了使用上述抛光组合物抛光衬底的方法。

公开(公告)号：US08541310B2

公开(公告)日：2013-09-24

申请号：US11800188

申请日：2007-05-04

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： H01L21/32 ,  H01L21/461 ,  B44C1/22 ,  C23F1/00 ,  C23F15/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

摘要翻译： 本发明提供了一种用于在过氧化氢存在下抛光含钌底物的化学机械抛光（CMP）组合物，而在抛光过程中不形成四氧化钌的毒性水平。 组合物包含（a）催化氧化剂，其包含水溶性过氧金属酸盐络合物，过氧金属酸盐络合物的可氧化前体或其组合，（b）颗粒磨料; 和（c）水性载体。 过氧金属酸盐络合物及其前体各自具有通过过氧化氢可氧化的还原形式，以在化学机械抛光期间再生过氧金属酸盐络合物。 还提供了用CMP抛光含钌表面的CMP方法。

公开(公告)号：US08008202B2

公开(公告)日：2011-08-30

申请号：US11888406

申请日：2007-08-01

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： B24D3/34 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

摘要翻译： 本发明提供了一种用于在氧化剂如过氧化氢存在下抛光含钌底物的化学机械抛光（CMP）组合物，而在抛光过程中不形成四氧化钌的毒性水平。 该组合物包含悬浮在含有钌配位的氧化氮配体（N-O配体）如氮氧根（例如4-羟基-TEMPO）的含水载体中的颗粒磨料（例如二氧化硅，氧化铝和/或二氧化钛） ）。 在氧化剂存在下，N-O配位体可以防止在基片表面沉积氧化态为Ⅳ或更高的钌物质，同时形成可氧化的Ru（II）N-O配位络合物 在基板的CMP期间形成钌。 还提供了用CMP抛光含钌表面的CMP方法。

公开(公告)号：US20090035942A1

公开(公告)日：2009-02-05

申请号：US11888406

申请日：2007-08-01

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： B24D3/34 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

摘要翻译： 本发明提供了一种用于在氧化剂如过氧化氢的存在下抛光含钌底物的化学 - 机械抛光（CMP）组合物，而在抛光过程中不形成四氧化钌的毒性水平。 组合物包含悬浮在含有钌配位的氧化氮配体（N-O配体）如氮氧根（例如4-羟基-TEMPO）的含水载体中的颗粒磨料（例如二氧化硅，氧化铝和/或二氧化钛）。 在氧化剂的存在下，NO配体防止了在基板表面上具有IV或更高氧化态的钌物质的沉积，同时形成了在CMP期间形成的氧化钌的可溶性Ru（II）NO配位络合物 的基底。 还提供了用CMP抛光含钌表面的CMP方法。

公开(公告)号：US07955520B2

公开(公告)日：2011-06-07

申请号：US11986921

申请日：2007-11-27

申请人： Daniela White ,  Jason Keleher ,  John Parker

发明人： Daniela White ,  Jason Keleher ,  John Parker

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/04 ,  C23F3/06

摘要： The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.

摘要翻译： 本发明提供用于抛光含铜基材的化学机械抛光（CMP）方法和组合物。 本发明的方法需要用本发明的CMP组合物，优选在氧化剂（例如过氧化氢）的存在下研磨含铜基材的表面。 本发明的CMP组合物包含颗粒磨料，铜络合剂，带有酸性OH基团的铜钝化剂和与酸性OH基团1,6关系的另外的氧取代基和水性载体。 本发明的优选组合物包含约0.01至约1重量％的颗粒磨料，约0.1至约1重量％的铜络合剂，约10至约1000ppm的铜钝化剂。

公开(公告)号：US20090075566A1

公开(公告)日：2009-03-19

申请号：US11856790

申请日：2007-09-18

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： B24B7/00 ,  C09C1/36

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463

摘要： The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 Å, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 Å, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.

摘要翻译： 本发明提供了一种化学机械抛光衬底的方法。 将基板与抛光垫和抛光组合物接触，抛光组合物包含由（A）由具有金红石结构的二氧化钛组成的颗粒和（B）由具有锐钛矿结构的二氧化钛组成的颗粒的研磨剂，其中x射线衍射图 的颗粒具有约0.5或更大的X / Y比，其中X是表示d-间隔约为3.24的x射线衍射曲线中的峰的强度，Y是在 表示约3.51的d间距的x射线衍射曲线和水。 抛光组分相对于基底移动，并且研磨衬底的至少一部分以抛光衬底。

公开(公告)号：US20080274619A1

公开(公告)日：2008-11-06

申请号：US11800188

申请日：2007-05-04

申请人： Daniela White ,  John Parker

发明人： Daniela White ,  John Parker

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

摘要翻译： 本发明提供了一种用于在过氧化氢存在下抛光含钌底物的化学机械抛光（CMP）组合物，而在抛光过程中不形成四氧化钌的毒性水平。 组合物包含（a）催化氧化剂，其包含水溶性过氧化金属络合物，过氧金属酸盐络合物的可氧化前体或其组合，（b）颗粒磨料; 和（c）水性载体。 过氧金属酸盐络合物及其前体各自具有通过过氧化氢可氧化的还原形式，以在化学机械抛光期间再生过氧金属酸盐络合物。 还提供了用CMP抛光含钌表面的CMP方法。