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    Stacked acoustic resonator comprising a bridge
    2.
    发明授权
    Stacked acoustic resonator comprising a bridge 有权
    包括桥的堆叠声谐振器

    公开(公告)号：US09136818B2

    公开(公告)日：2015-09-15

    申请号：US13074262

    申请日：2011-03-29

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/02 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/585

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极; 设置在所述第二电极上的第二压电层; 设置在所述第二压电层上的第三电极; 以及设置在所述第一电极和所述第三电极之间的桥。

    Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor
    4.
    发明授权
    Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor 有权
    具有电极层和压电层厚度的双膜体声共振器提供改善的品质因数

    公开(公告)号：US08872604B2

    公开(公告)日：2014-10-28

    申请号：US13101376

    申请日：2011-05-05

    申请人： Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

    发明人： Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/56 ,  H03H9/58 ,  H03H9/205

    CPC分类号： H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

    摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

    摘要翻译： 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

    Coupled resonator filter comprising a bridge and frame elements
    5.
    发明授权
    Coupled resonator filter comprising a bridge and frame elements 有权
    耦合谐振滤波器，包括桥接元件和框架元件

    公开(公告)号：US09148117B2

    公开(公告)日：2015-09-29

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    Stacked bulk acoustic resonator
    6.
    发明授权
    Stacked bulk acoustic resonator 有权
    堆叠体声共振器

    公开(公告)号：US08575820B2

    公开(公告)日：2013-11-05

    申请号：US13074094

    申请日：2011-03-29

    申请人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

    发明人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

    IPC分类号： H01L41/047 ,  H03H9/15

    CPC分类号： H03H3/02 ,  H03H9/132 ,  H03H9/585 ,  H03H2003/0428

    摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.

    摘要翻译： 层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。 层叠的体声波谐振器还包括形成在第一，第二和第三电极中的至少一个的表面上的内部的内部凸起区域，以及沿着至少一个的表面上的外周边形成的外部凸起区域 的第一，第二或第三电极。 外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

    STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME 有权
    堆叠式散热器共振器及其制造方法

    公开(公告)号：US20120248941A1

    公开(公告)日：2012-10-04

    申请号：US13074094

    申请日：2011-03-29

    申请人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

    发明人： Alexandre Augusto Shirakawa ,  Paul Bradley ,  Dariusz Burak ,  Stefan Bader ,  Chris Feng

    IPC分类号： H03H9/17 ,  H01L41/047

    CPC分类号： H03H3/02 ,  H03H9/132 ,  H03H9/585 ,  H03H2003/0428

    摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.

    摘要翻译： 层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。 所述层叠的体声波谐振器还包括形成在所述第一，第二和第三电极中的至少一个的表面上的内部部分中的内部凸起区域，以及沿所述至少一个表面上的外周边形成的外部凸起区域 第一，第二或第三电极之一。 外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

    Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
    8.
    发明授权
    Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient 有权
    具有电极边缘对准的双膜体声波谐振器提供改善的品质因数或机电耦合系数

    公开(公告)号：US08797123B2

    公开(公告)日：2014-08-05

    申请号：US13232213

    申请日：2011-09-14

    申请人： Dariusz Burak ,  Chris Feng ,  Stefan Bader

    发明人： Dariusz Burak ,  Chris Feng ,  Stefan Bader

    IPC分类号： H03H9/02 ,  H03H9/58 ,  H03H9/13 ,  H03H9/15

    CPC分类号： H03H9/132 ,  H03H9/585 ,  H03H9/587

    摘要： An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

    摘要翻译： 声谐振器包括具有横向边界的沟槽的衬底，形成在沟槽上的衬底上的第一电极，并且具有横向边缘，该侧边缘从沟槽的横向边界横向偏移第一距离;第一压电层 第一电极，形成在第一压电层上并具有在沟槽的横向边界内侧向对齐的边缘的第二电极，位于第二电极上的第二压电层，以及位于第二压电层上的第三电极， 其从第二电极的边缘横向偏移。

    Method for fabricating a semiconductor component based on GaN
    9.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US08129209B2

    公开(公告)日：2012-03-06

    申请号：US12648566

    申请日：2009-12-29

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    Method for fabricating a semiconductor component based on GaN
    10.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US07691656B2

    公开(公告)日：2010-04-06

    申请号：US10417611

    申请日：2003-04-17

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底主体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN层，GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。