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22 条记录 (耗时 0.028 秒)

    Bulk acoustic resonator comprising non-piezoelectric layer
    1.
    发明授权
    Bulk acoustic resonator comprising non-piezoelectric layer 有权
    包含非压电层的体声波谐振器

    公开(公告)号：US08330325B1

    公开(公告)日：2012-12-11

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    发明人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    IPC分类号： H03H9/15 ,  H03H9/125

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    Bulk acoustic resonator comprising non-piezoelectric layer and bridge
    5.
    发明授权
    Bulk acoustic resonator comprising non-piezoelectric layer and bridge 有权
    包括非压电层和桥的体声波谐振器

    公开(公告)号：US08350445B1

    公开(公告)日：2013-01-08

    申请号：US13168101

    申请日：2011-06-24

    申请人： Alexandre Shirakawa ,  Dariusz Burak ,  Phil Nikkel

    发明人： Alexandre Shirakawa ,  Dariusz Burak ,  Phil Nikkel

    IPC分类号： H03H9/25

    CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

    摘要： A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.

    摘要翻译： 体声波（BAW）谐振器包括：形成在基板上的第一电极; 形成在所述第一电极上的压电层; 形成在第一压电层上的第二电极; 形成在所述第一电极上且与所述压电层相邻的非压电层; 以及形成在非压电层和第一或第二电极之间的桥。

    Coupled resonator filter comprising a bridge and frame elements
    8.
    发明授权
    Coupled resonator filter comprising a bridge and frame elements 有权
    耦合谐振滤波器，包括桥接元件和框架元件

    公开(公告)号：US09148117B2

    公开(公告)日：2015-09-29

    申请号：US13167939

    申请日：2011-06-24

    申请人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    发明人： Dariusz Burak ,  Alexandre Shirakawa ,  Chris Feng ,  Phil Nikkel ,  Stefan Bader

    IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/58

    CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

    摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

    ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES
    10.
    发明申请
    ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES 有权
    具有多个横向特征的共振共振器

    公开(公告)号：US20130063227A1

    公开(公告)日：2013-03-14

    申请号：US13232334

    申请日：2011-09-14

    申请人： Dariusz Burak ,  Phil Nikkel ,  Chris Feng

    发明人： Dariusz Burak ,  Phil Nikkel ,  Chris Feng

    IPC分类号： H03H9/54

    CPC分类号： H03H9/132 ,  H03H9/02086 ,  H03H9/131 ,  H03H9/173

    摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括堆叠在空腔上的衬底上的第一电极，堆叠在第一电极上的压电层和堆叠在压电层上的第二电极。 多个横向特征形成在第二电极的表面上，横向特征包括多个阶梯结构。