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    Hydrolytically stable grooved polishing pads for chemical mechanical planarization
    3.
    发明授权
    Hydrolytically stable grooved polishing pads for chemical mechanical planarization 有权
    水解稳定的槽式抛光垫用于化学机械平面化

    公开(公告)号：US06749485B1

    公开(公告)日：2004-06-15

    申请号：US09665841

    申请日：2000-09-20

    申请人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner ,  Joseph K. So ,  John V. H. Roberts

    发明人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner ,  Joseph K. So ,  John V. H. Roberts

    IPC分类号： B24B100

    CPC分类号： B24B37/26 ,  B24B13/04 ,  B24B37/042 ,  B24D3/28 ,  Y10S451/921

    摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

    摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置， 接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。 改进的垫的特征在于具有高的能量耗散以及高的垫刚度和水解稳定性。

    Grooved polishing pads for chemical mechanical planarization
    5.
    发明授权
    Grooved polishing pads for chemical mechanical planarization 有权
    用于化学机械平面化的凹槽抛光垫

    公开(公告)号：US06736709B1

    公开(公告)日：2004-05-18

    申请号：US09631783

    申请日：2000-08-03

    申请人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner ,  Joseph K. So ,  John V. H. Roberts

    发明人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner ,  Joseph K. So ,  John V. H. Roberts

    IPC分类号： B24B500

    CPC分类号： B24B37/26 ,  B24D3/28

    摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area. The pad of this invention resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, better slurry distribution and waste removal from the pad surface, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

    摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，与水性液体组合，任选地含有亚微米级的颗粒，并提供用于在压力下使晶片和抛光垫相对运动的装置，使得移动 加压接触导致所述晶片的表面的平面去除，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。 改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。 该垫还具有稳定的形态，可以容易地和一致地再现。 焊盘表面具有包括穿孔以及表面凹槽设计的宏观纹理。表面凹槽设计具有凹槽深度和总体垫厚度以及凹槽和凹槽面积之间的具体关系。 本发明的垫子抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。 这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，更好的浆料分布和从焊盘表面的废物移除，高金属去除速率，良好的平坦化和较低的缺陷（划痕 和光点缺陷）。

    Polishing pads for chemical mechanical planarization
    10.
    发明授权
    Polishing pads for chemical mechanical planarization 有权
    抛光垫用于化学机械平面化

    公开(公告)号：US06860802B1

    公开(公告)日：2005-03-01

    申请号：US09608537

    申请日：2000-06-30

    申请人： Arun Vishwanathan ,  David B. James ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    发明人： Arun Vishwanathan ,  David B. James ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    IPC分类号： B24B37/04 ,  B24D3/28 ,  B24D13/14 ,  B24D11/00

    CPC分类号： B24B37/26 ,  B24B37/042 ,  B24D3/28

    摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

    摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置， 接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低的弹性恢复，使得片材的机械响应大大无弹性。 改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。 该垫具有稳定的形态，可以容易且一致地再现。 垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。 这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。