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30 条记录 (耗时 0.024 秒)

    Memory element using active layer of blended materials
    3.
    发明授权
    Memory element using active layer of blended materials 有权
    记忆元素使用有源层的混合材料

    公开(公告)号：US07378682B2

    公开(公告)日：2008-05-27

    申请号：US11052688

    申请日：2005-02-07

    申请人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    发明人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    IPC分类号： H01L51/00

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016

    摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

    摘要翻译： 本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极，用于从被动层接收带电物质。 活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

    Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell
    5.
    发明授权
    Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell 有权
    防止载体离子氧化，提高聚合物记忆体的记忆保留性能

    公开(公告)号：US07902086B2

    公开(公告)日：2011-03-08

    申请号：US11608388

    申请日：2006-12-08

    申请人： Swaroop Kaza ,  David Gaun ,  Michael A. Van Buskirk

    发明人： Swaroop Kaza ,  David Gaun ,  Michael A. Van Buskirk

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L51/0575 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/51 ,  G11C2213/77 ,  H01L27/285

    摘要： Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation preventer. The oxidation preventers may contain at least one of 1) an oxygen scavenger, 2) a polymer with oxidizable side-chain groups which can be preferentially oxidized over the carrier ions/electrodes, and 3) an oxidizable molecule that can be preferentially oxidized over the carrier ions/electrodes.

    摘要翻译： 公开了提高聚合物存储器单元的记忆保持性能。 所述方法包括提供含有至少一种有机半导体和载流子离子氧化防止剂和电极氧化防止剂中的至少一种的半导体聚合物层。 氧化防止剂可以含有1）除氧剂中的至少一种，2）具有可氧化的侧链基团的聚合物，其可以优先在载体离子/电极上氧化，和3）可以优先氧化的可氧化分子 载体离子/电极。

    Memory element using active layer of blended materials
    7.
    发明申请
    Memory element using active layer of blended materials 有权
    记忆元素使用有源层的混合材料

    公开(公告)号：US20060175646A1

    公开(公告)日：2006-08-10

    申请号：US11052688

    申请日：2005-02-07

    申请人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    发明人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    IPC分类号： H01L29/94

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016

    摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

    摘要翻译： 本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极，用于从被动层接收带电物质。 活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

    Use of periodic refresh in medium retention memory arrays
    8.
    发明授权
    Use of periodic refresh in medium retention memory arrays 有权
    在介质保留存储器阵列中使用定期更新

    公开(公告)号：US07474579B2

    公开(公告)日：2009-01-06

    申请号：US11613832

    申请日：2006-12-20

    申请人： Colin S. Bill ,  Swaroop Kaza ,  Wei Daisy Cai ,  Tzu-Ning Fang ,  David Gaun ,  Eugen Gershon ,  Michael A. Van Buskirk ,  Jean Wu

    发明人： Colin S. Bill ,  Swaroop Kaza ,  Wei Daisy Cai ,  Tzu-Ning Fang ,  David Gaun ,  Eugen Gershon ,  Michael A. Van Buskirk ,  Jean Wu

    IPC分类号： G11C7/00

    CPC分类号： G11C11/406 ,  G11C11/40615 ,  G11C13/0033 ,  G11C13/0069 ,  G11C16/3431

    摘要： Systems and methods are disclosed that facilitate extending data retention time in a data retention device, such as a nanoscale resistive memory cell array, via assessing a resistance level in a tracking element associated with the memory array and refreshing the memory array upon a determination that the resistance of the tracking element has reached or exceeded a predetermined reference threshold resistance value. The tracking element can be a memory cell within the array itself and can have an initial resistance value that is substantially higher than an initial resistance value for a programmed memory cell in the array, such that resistance increase in the tracking cell will cause the tracking cell to reach the threshold value and trigger refresh of the array before data corruption/loss occurs in the core memory cells.

    摘要翻译： 公开了通过评估与存储器阵列相关联的跟踪元件中的电阻水平并在确定存储器阵列的情况下刷新存储器阵列时有助于在诸如纳米级电阻存储器单元阵列之类的数据保持装置中扩展数据保留时间的系统和方法 跟踪元件的电阻已达到或超过预定参考阈值电阻值。 跟踪元件可以是阵列本身内的存储器单元，并且可以具有基本上高于阵列中的编程存储器单元的初始电阻值的初始电阻值，使得跟踪单元中的电阻增加将导致跟踪单元 在核心存储器单元中发生数据损坏/丢失之前达到阈值并触发阵列刷新。

    Variable breakdown characteristic diode
    9.
    发明授权
    Variable breakdown characteristic diode 有权
    可变击穿特性二极管

    公开(公告)号：US07579631B2

    公开(公告)日：2009-08-25

    申请号：US11087000

    申请日：2005-03-22

    申请人： David Gaun ,  Colin S. Bill ,  Swaroop Kaza

    发明人： David Gaun ,  Colin S. Bill ,  Swaroop Kaza

    IPC分类号： H01L29/00

    CPC分类号： H01L51/0575 ,  B82Y10/00 ,  G11C11/5664 ,  G11C11/5692 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/11 ,  G11C2213/12 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/285

    摘要： A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.

    摘要翻译： 公开了一种由在至少两个电极之间具有可控导电介质的至少两个电极制成的存储单元。 可控导电介质包括由超离子材料和有源层制成的钝化层。 当诸如施加的电场的外部刺激施加在第一和第二电极上时，离子移动并掺杂和/或去透明聚合物。 用于掺杂聚合物的应用外部刺激物大于施加的外部刺激以操作记忆单元。 该聚合物用作具有电特性的可变击穿特性二极管，这是掺杂度的结果。 存储元件可以具有电流受限读取信号。 还公开了制造存储器件/单元的方法，使用存储器件/单元的方法，以及诸如计算机，手持式电子设备和包含存储单元的存储器件的设备。