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33 条记录 (耗时 0.031 秒)

    Memory element using active layer of blended materials
    3.
    发明授权
    Memory element using active layer of blended materials 有权
    记忆元素使用有源层的混合材料

    公开(公告)号：US07378682B2

    公开(公告)日：2008-05-27

    申请号：US11052688

    申请日：2005-02-07

    申请人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    发明人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    IPC分类号： H01L51/00

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016

    摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

    摘要翻译： 本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极，用于从被动层接收带电物质。 活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

    Memory element using active layer of blended materials
    4.
    发明申请
    Memory element using active layer of blended materials 有权
    记忆元素使用有源层的混合材料

    公开(公告)号：US20060175646A1

    公开(公告)日：2006-08-10

    申请号：US11052688

    申请日：2005-02-07

    申请人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    发明人： David Gaun ,  Swaroop Kaza ,  Stuart Spitzer ,  Juri Krieger ,  Richard Kingsborough

    IPC分类号： H01L29/94

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016

    摘要： The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

    摘要翻译： 本存储器件具有第一和第二电极，在第一和第二电极之间并且与第一电极接触并且与第一电极接触的无源层以及在第一和第二电极之间并且与被动层和第二电极接触的有源层 电极，用于从被动层接收带电物质。 活性层是（i）第一聚合物和（ii）用于增强离子迁移的第二聚合物的混合物，改善界面并促进活性层中带电物质的快速且基本上均匀的分布，即防止 局部注射带电物种。 这些特征导致存储元件具有改进的稳定性，更可控的导通电阻，改进的开关速度和较低的编程电压。

    System and method for processing an organic memory cell
    9.
    发明申请
    System and method for processing an organic memory cell 有权
    用于处理有机存储单元的系统和方法

    公开(公告)号：US20070090343A1

    公开(公告)日：2007-04-26

    申请号：US11256558

    申请日：2005-10-21

    申请人： Nicolay Yudanov ,  Igor Sokolik ,  Richard Kingsborough ,  William Leonard ,  Suzette Pangrle ,  Nicholas Tripsas ,  Minh Ngo

    发明人： Nicolay Yudanov ,  Igor Sokolik ,  Richard Kingsborough ,  William Leonard ,  Suzette Pangrle ,  Nicholas Tripsas ,  Minh Ngo

    IPC分类号： H01L29/08

    CPC分类号： H01L51/001 ,  C23C16/54 ,  H01J2237/3321 ,  H01L27/285

    摘要： A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.

    摘要翻译： 公开了一种用于处理有机存储单元的系统和方法。 示例性系统可以采用封闭的处理室，可操作以在第一电极上形成钝化层的无源层形成部件和可操作地在被动层上形成有机半导体层的有机半导体层形成部件。 晶片衬底不需要从钝化层形成系统转移到有机半导体层形成系统。 钝化层在形成无源层之后并且在形成有机半导体层之前不暴露于空气。 结果，在薄膜层中不会发生由暴露于空气引起的导电杂质，从而提高了有机存储器件的生产率，质量和可靠性。 该系统可以进一步采用可在有机半导体层上形成第二电极的第二电极形成部件。

    Semiconductor memory device comprising one or more injecting bilayer electrodes
    10.
    发明申请
    Semiconductor memory device comprising one or more injecting bilayer electrodes 有权
    包括一个或多个注入双层电极的半导体存储器件

    公开(公告)号：US20070058426A1

    公开(公告)日：2007-03-15

    申请号：US11227603

    申请日：2005-09-15

    申请人： Igor Sokolik ,  Richard Kingsborough ,  Aaron Mandell

    发明人： Igor Sokolik ,  Richard Kingsborough ,  Aaron Mandell

    IPC分类号： G11C11/34

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/285

    摘要： The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells with selection diodes comprising a bilayer electrode. Memory cells are provided comprising bilayer cathodes and/or bilayer anodes that facilitate a significant improvement in charge injection into the diode layers of memory cells. The increased charge (e.g. electrons or holes) density in the diode layers of the selected memory cells results in improved memory cell switching times and lowers the voltage required for the memory cell to operate, thereby, creating a more efficient memory cell.

    摘要翻译： 本发明提供了便于形成包括具有一个或多个注入双层电极的存储器单元的半导体存储器件的系统和方法。 存储器阵列通常包括具有两个分立组件的位单元; 存储元件和选择元件，例如二极管。 本发明通过形成具有包括双层电极的选择二极管的存储单元来提高存储器件的效率。 提供包含双层阴极和/或双层阳极的存储器单元，其有助于电荷注入到存储器单元的二极管层中的显着改进。 所选择的存储器单元的二极管层中的增加的电荷（例如电子或空穴）密度导致改善的存储单元切换时间并降低存储器单元操作所需的电压，从而创建更有效的存储单元。