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    Apparatus and methods for adjusting performance of programmable logic devices
    5.
    发明授权
    Apparatus and methods for adjusting performance of programmable logic devices 有权
    用于调节可编程逻辑器件性能的装置和方法

    公开(公告)号：US07348827B2

    公开(公告)日：2008-03-25

    申请号：US10848953

    申请日：2004-05-19

    申请人： Irfan Rahim ,  Peter McElheny ,  Yow-Juang W. Liu ,  Bruce Pedersen

    发明人： Irfan Rahim ,  Peter McElheny ,  Yow-Juang W. Liu ,  Bruce Pedersen

    IPC分类号： G05F3/02

    CPC分类号： H03K19/1731 ,  G06F17/5054 ,  H03K19/00369 ,  H03K2217/0018

    摘要： A programmable logic device (PLD) includes mechanisms for adjusting or setting the body bias of one or more transistors. The PLD includes a body-bias generator. The body-bias generator is configured to set a body bias of one or more transistors within the programmable logic device. More specifically, the body-bias generator sets the body bias of the transistor(s) so as to trade off performance and power consumption of the transistor(s).

    摘要翻译： 可编程逻辑器件（PLD）包括用于调整或设置一个或多个晶体管的体偏置的机构。 PLD包括体偏置发生器。 体偏置发生器被配置为设置可编程逻辑器件内的一个或多个晶体管的体偏置。 更具体地，体偏置发生器设置晶体管的体偏置，以便折衷晶体管的性能和功耗。

    Apparatus and methods for multi-gate silicon-on-insulator transistors
    7.
    发明授权
    Apparatus and methods for multi-gate silicon-on-insulator transistors 有权
    多栅极绝缘体上硅晶体管的装置和方法

    公开(公告)号：US07415690B2

    公开(公告)日：2008-08-19

    申请号：US11930105

    申请日：2007-10-31

    申请人： Minchang Liang ,  Yow-Juang W. Liu

    发明人： Minchang Liang ,  Yow-Juang W. Liu

    IPC分类号： H03K17/693

    CPC分类号： G06F17/5054 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

    摘要： An integrated circuit (IC) includes mechanisms for adjusting or setting the gate bias of one gate of one or more multi-gate transistors. The IC includes a gate bias generator. The gate bias generator is configured to set gate bias of one gate of the one or more multi-gate transistors within the IC. More specifically, the gate bias generator sets the gate bias of the transistor(s) so as to trade off performance and power consumption of the transistor(s).

    摘要翻译： 集成电路（IC）包括用于调整或设置一个或多个多栅极晶体管的一个栅极的栅极偏置的机构。 IC包括栅极偏置发生器。 栅极偏置发生器被配置为设置IC内的一个或多个多栅极晶体管的一个栅极的栅极偏置。 更具体地，栅极偏置发生器设置晶体管的栅极偏置，以便折衷晶体管的性能和功耗。

    Integrated circuits with reduced standby power consumption
    8.
    发明授权
    Integrated circuits with reduced standby power consumption 有权
    具有降低待机功耗的集成电路

    公开(公告)号：US06940307B1

    公开(公告)日：2005-09-06

    申请号：US10691756

    申请日：2003-10-22

    申请人： Yow-Juang W. Liu ,  Hugh O ,  Richard G. Cliff

    发明人： Yow-Juang W. Liu ,  Hugh O ,  Richard G. Cliff

    IPC分类号： H03K19/00 ,  H03K19/173

    CPC分类号： H03K19/0016

    摘要： Integrated circuit standby power consumption may be reduced using a reverse-bias transistor control arrangement that reduces transistor leakage current. Integrated circuit transistors may be turned off using a reverse bias voltage rather than a ground voltage. A charge pump circuit on the integrated circuit may be used to generate the reverse bias voltage. The reverse bias voltage may also be provided from an external source. The integrated circuit may be a programmable logic device in which logic is configured by providing programming data to configuration cells. The configuration cells may be used to apply either a positive power supply voltage to a given transistor to turn that transistor on or to provide the reverse bias voltage to that transistor to turn that transistor off.

    摘要翻译： 可以使用降低晶体管漏电流的反向偏置晶体管控制装置来降低集成电路待机功耗。 集成电路晶体管可以使用反向偏置电压而不是接地电压来关断。 可以使用集成电路上的电荷泵电路来产生反向偏置电压。 也可以从外部源提供反向偏置电压。 集成电路可以是可编程逻辑器件，其中通过向配置单元提供编程数据来配置逻辑。 配置单元可以用于将正电源电压施加到给定晶体管以将该晶体管导通，或者向该晶体管提供反向偏置电压以将该晶体管截止。

    Apparatus and methods for multi-gate silicon-on-insulator transistors
    9.
    发明授权
    Apparatus and methods for multi-gate silicon-on-insulator transistors 有权
    多栅极绝缘体上硅晶体管的装置和方法

    公开(公告)号：US07307445B2

    公开(公告)日：2007-12-11

    申请号：US11466565

    申请日：2006-08-23

    申请人： Minchang Liang ,  Yow-Juang W. Liu

    发明人： Minchang Liang ,  Yow-Juang W. Liu

    IPC分类号： H03K17/16

    CPC分类号： G06F17/5054 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

    摘要： An integrated circuit (IC) includes mechanisms for adjusting or setting the gate bias of one gate of one or more multi-gate transistors. The IC includes a gate bias generator. The gate bias generator is configured to set a gate bias of one gate of the one or more multi-gate transistors within the IC. More specifically, the gate bias generator sets the gate bias of the transistor(s) so as to trade off performance and power consumption of the transistor(s).

    摘要翻译： 集成电路（IC）包括用于调整或设置一个或多个多栅极晶体管的一个栅极的栅极偏置的机构。 IC包括栅极偏置发生器。 栅极偏置发生器被配置为设置IC内的一个或多个多栅极晶体管的一个栅极的栅极偏置。 更具体地，栅极偏置发生器设置晶体管的栅极偏置，以便折衷晶体管的性能和功耗。

    Apparatus and methods for multi-gate silicon-on-insulator transistors
    10.
    发明授权
    Apparatus and methods for multi-gate silicon-on-insulator transistors 有权
    多栅极绝缘体上硅晶体管的装置和方法

    公开(公告)号：US07112997B1

    公开(公告)日：2006-09-26

    申请号：US10849074

    申请日：2004-05-19

    申请人： Minchang Liang ,  Yow-Juang W. Liu

    发明人： Minchang Liang ,  Yow-Juang W. Liu

    IPC分类号： H03K19/0175

    CPC分类号： G06F17/5054 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

    摘要： An integrated circuit (IC) includes mechanisms for adjusting or setting the gate bias of one gate of one or more multi-gate transistors. The IC includes a gate bias generator. The gate bias generator is configured to set a gate bias of one gate of the one or more multi-gate transistors within the IC. More specifically, the gate bias generator sets the gate bias of the transistor(s) so as to trade off performance and power consumption of the transistor(s).

    摘要翻译： 集成电路（IC）包括用于调整或设置一个或多个多栅极晶体管的一个栅极的栅极偏置的机构。 IC包括栅极偏置发生器。 栅极偏置发生器被配置为设置IC内的一个或多个多栅极晶体管的一个栅极的栅极偏置。 更具体地，栅极偏置发生器设置晶体管的栅极偏置，以便折衷晶体管的性能和功耗。