公开(公告)号：US20070040085A1

公开(公告)日：2007-02-22

申请号：US11161818

申请日：2005-08-17

申请人： David Pincek ,  Andrew Edwards ,  William Stewart ,  Xiaozheng Lu ,  Stanley Coe

发明人： David Pincek ,  Andrew Edwards ,  William Stewart ,  Xiaozheng Lu ,  Stanley Coe

IPC分类号： A47F5/00

CPC分类号： F16M11/14 ,  F16M13/02 ,  F16M2200/022 ,  H04R1/026 ,  Y10T403/32196 ,  Y10T403/32631

摘要： A speaker mount includes a support structure attachment, an adjustable mount connected to the structure attachment and including a first connector, and a speaker attachment including a second connector. The first and second connectors may selectively be connected or disconnected, permitting a speaker to be connected to and disconnected from the remainder of the mount. The first connector is mounted to a ball. A lock plate is mounted at an opposing side of the ball from the first connector. A fastener controls the distance between the first connector and the lock plate. In one position, the fastener draws the lock plate and first connector towards one another, fixing the lock plate in a position on the ball, and in another position allows the first connector to be moved relative to the ball. The mount permits orientation of a speaker in a variety of positions relative to a support structure.

摘要翻译： 扬声器支架包括支撑结构附件，连接到结构附件的可调节安装件，并且包括第一连接器以及包括第二连接器的扬声器附件。 可以选择性地连接或断开第一和第二连接器，从而允许扬声器连接到安装座的其余部分并与之隔离。 第一个连接器安装在一个球上。 锁定板安装在与第一连接器相对的球的相对侧。 紧固件控制第一连接器和锁定板之间的距离。 在一个位置，紧固件将锁定板和第一连接器朝向彼此拉紧，将锁定板固定在球上的位置，并且在另一位置允许第一连接器相对于球移动。 安装件允许扬声器相对于支撑结构在各种位置的取向。

公开(公告)号：US20180016082A1

公开(公告)日：2018-01-18

申请号：US15265076

申请日：2016-09-14

申请人： Raza Bashir ,  Craig Wissent ,  Gustavo Galaz ,  Andrew Edwards

发明人： Raza Bashir ,  Craig Wissent ,  Gustavo Galaz ,  Andrew Edwards

IPC分类号： B65D81/32 ,  B65D43/02 ,  B65D25/04 ,  B65D43/16

CPC分类号： B65D81/3294 ,  A23L5/00 ,  A23L27/00 ,  A23V2002/00 ,  A47J47/04 ,  B65D25/04 ,  B65D43/0225 ,  B65D43/16

摘要： A user-configurable flavoring module is provided. The multi-flavoring module supplies multiple individual flavor compositions that may be used to flavor foodstuffs, particularly nutritional supplements. The multi-flavoring module may be provided separately or together with the foodstuff to be flavored and provides for individual or combinations of flavorings to flavor the foodstuff variably, on a per serving basis, readily changing the flavor and flavor intensity.

公开(公告)号：US20130164893A1

公开(公告)日：2013-06-27

申请号：US13335355

申请日：2011-12-22

申请人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/337 ,  H01L21/20

CPC分类号： H01L29/0619 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

摘要翻译： 一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分，以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

公开(公告)号：US20130153917A1

公开(公告)日：2013-06-20

申请号：US13326192

申请日：2011-12-14

申请人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

发明人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

IPC分类号： H01L29/20 ,  H01L21/332 ,  H01L21/20

CPC分类号： H01L29/66916 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66924 ,  H01L29/8083

摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

公开(公告)号：US20130087835A1

公开(公告)日：2013-04-11

申请号：US13270606

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/808 ,  H01L21/20 ,  H01L21/337

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物 耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

公开(公告)号：US08026596B2

公开(公告)日：2011-09-27

申请号：US11839030

申请日：2007-08-15

申请人： Sameer Singhal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik C. Kizilyalli

发明人： Sameer Singhal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik C. Kizilyalli

IPC分类号： H01L23/373 ,  H01L21/58

CPC分类号： H01L27/0605 ,  H01L23/4824 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/78681 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

摘要翻译： 描述了与装置相关的氮化镓材料装置和方法。 这些器件可以设计成提供增强的热传导和降低的热阻。 通过和移出氮化镓器件的增加的热传导增强了器件的可操作性，包括提供优异的RF操作，可靠性和寿命。

公开(公告)号：US20070063143A1

公开(公告)日：2007-03-22

申请号：US11231141

申请日：2005-09-19

申请人： Larry Blackwood ,  Andrew Edwards ,  James Jewell ,  Edward Reber ,  Edward Seabury

发明人： Larry Blackwood ,  Andrew Edwards ,  James Jewell ,  Edward Reber ,  Edward Seabury

IPC分类号： G01N23/222

CPC分类号： G01N23/222

摘要： A method for detecting an element is described and which includes the steps of providing a gamma-ray spectrum which has a region of interest which corresponds with a small amount of an element to be detected; providing nonparametric assumptions about a shape of the gamma-ray spectrum in the region of interest, and which would indicate the presence of the element to be detected; and applying a statistical test to the shape of the gamma-ray spectrum based upon the nonparametric assumptions to detect the small amount of the element to be detected.

摘要翻译： 描述了用于检测元件的方法，其包括以下步骤：提供具有与少量待检测元件对应的感兴趣区域的伽马射线谱; 提供关于感兴趣区域中的伽马射线谱的形状的非参数假设，并且其将指示待检测的元素的存在; 并且基于非参数假设对伽马射线谱的形状进行统计测试以检测待检测的元素的少量。

公开(公告)号：US20060106810A1

公开(公告)日：2006-05-18

申请号：US11282047

申请日：2005-11-17

申请人： Andrew Edwards ,  Andrew Hickson ,  Martin Holder ,  Trevor Lobban

发明人： Andrew Edwards ,  Andrew Hickson ,  Martin Holder ,  Trevor Lobban

IPC分类号： G06F17/30

CPC分类号： G06F17/30011

摘要： Documents are published in a publish subscribe data processing system. A first document to be published may have an associated topic. The first document is retained as a retained document. A second document to be published is retained as the retained document in response to receiving the second document before a predetermined time interval has passed. A copy of the second document is sent to a subscriber of the topic. A copy of the retained document is sent to the subscriber of the topic in response to a determination that the predetermined time interval has passed.

摘要翻译： 文件发布在发布订阅数据处理系统中。 要发布的第一个文档可能有一个相关的主题。 第一份文件保留为保留文件。 在预定的时间间隔过去之前，将要发布的第二个文档作为保留的文档被保留以响应于接收第二个文档。 将第二份文件的副本发送给该主题的订阅者。 响应于已经经过预定时间间隔的确定，保留的文档的副本被发送到主题的订户。

公开(公告)号：US20050010891A1

公开(公告)日：2005-01-13

申请号：US10911901

申请日：2004-08-04

申请人： Ronnie Chaiken ,  Hon Keat Chan ,  Andrew Edwards ,  Gregory Eigsti ,  David Gillies ,  Bruce Kuramoto ,  John Lefor ,  Ken Pierce ,  Amitabh Srivastava ,  Hoi Vo ,  Gideon Yuval

发明人： Ronnie Chaiken ,  Hon Keat Chan ,  Andrew Edwards ,  Gregory Eigsti ,  David Gillies ,  Bruce Kuramoto ,  John Lefor ,  Ken Pierce ,  Amitabh Srivastava ,  Hoi Vo ,  Gideon Yuval

IPC分类号： G06F9/44 ,  G06F9/45

CPC分类号： G06F8/52

摘要： Each component binary in a heterogeneous program is translated from a platform-specific instruction set into a set of intermediate representation (IR) instructions that are platform-neutral. The IR instructions are grouped into IR code blocks, the IR code blocks into IR procedures, and the IR procedures into IR components to create an intermediate representation hierarchy for the program. An application program interface is provided that permits user access to the IR hierarchy for instrumentation, optimization, navigation, and manipulation of the IR hierarchy. The transformed IR hierarchy is then translated into platform-specific instructions and output as a modified binary. The user can designate a different platform for the output translation of a code block than the platform for which the code block was originally written. Prologue and epilog code is added to contiguous blocks that are translated into different architectures. The modified binary can be iterated through the translation and transformation process to produce multiple versions of the heterogeneous program.

摘要翻译： 异构程序中的每个组件二进制文件从平台特定的指令集转换为平台中立的一组中间表示（IR）指令。 IR指令分为IR代码块，IR代码块转换为IR程序，IR程序分为IR组件，以创建程序的中间表示层次结构。 提供了一个应用程序接口，允许用户访问IR层次结构，以进行IR层次结构的检测，优化，导航和操作。 转换的IR层次结构然后被转换为平台特定的指令并作为修改的二进制输出。 用户可以为代码块的输出转换指定与代码块最初写入的平台不同的平台。 序言和epilog代码被添加到被转换成不同架构的连续块。 修改的二进制文件可以通过翻译和转换过程进行迭代，以生成异构程序的多个版本。

公开(公告)号：US09224828B2

公开(公告)日：2015-12-29

申请号：US13270606

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/76 ,  H01L29/66 ,  H01L29/808 ,  H01L29/868 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物 耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。