公开(公告)号：US06625835B1

公开(公告)日：2003-09-30

申请号：US09580827

申请日：2000-05-26

申请人： David T. Frost ,  Oliver David Jones ,  Scott Petersen ,  Donald Stephens ,  Anthony Jones ,  Bryan Riley

发明人： David T. Frost ,  Oliver David Jones ,  Scott Petersen ,  Donald Stephens ,  Anthony Jones ,  Bryan Riley

IPC分类号： B08B102

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67706 ,  H01L21/67712 ,  H01L21/6776 ,  Y10S134/902 ,  Y10S414/135

摘要： A cascaded disk scrubbing system and method are provided. The cascaded disk scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a disk in a vertical orientation through disk preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the disk and to transition the disk in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each disk preparation zone, and the cascaded disk scrubbing system is configured to progress from dirtiest to cleanest as the disk transitions through each disk preparation zone.

摘要翻译： 提供了级联的磁盘清洗系统和方法。 级联的磁盘擦除系统包括刷对行的阵列。 每排包括多个反向旋转刷对，它们被水平和纵向布置，并且构造成通过由每对刷定义的盘准备区沿垂直方向接收和处理盘。 刷子对之下和之间是配置为向盘施加旋转并且通过刷对以垂直方向转换盘的轨道。 喷嘴在刷对之上和之上分配流体，并且刷对构造成使得流体通过刷对分配。 喷嘴在每个盘准备区之间分配流体帘子，并且级联盘擦洗系统被配置为随着盘转过每个盘准备区而从最脏到最清洁。

公开(公告)号：US06588043B1

公开(公告)日：2003-07-08

申请号：US09580367

申请日：2000-05-26

申请人： David T. Frost ,  Oliver David Jones ,  Scott Petersen ,  Donald Stephens ,  Anthony Jones ,  Bryan Riley

发明人： David T. Frost ,  Oliver David Jones ,  Scott Petersen ,  Donald Stephens ,  Anthony Jones ,  Bryan Riley

IPC分类号： B08B102

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67706 ,  H01L21/67712 ,  H01L21/6776 ,  Y10S134/902 ,  Y10S414/135

摘要： A cascaded wafer scrubbing system and method are provided. The cascaded wafer scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a wafer in a vertical orientation through wafer preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the wafer and to transition the wafer in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each wafer preparation zone, and the cascaded wafer scrubbing system is configured to progress from dirtiest to cleanest as the wafer transitions through each wafer preparation zone.

摘要翻译： 提供级联晶片洗涤系统和方法。 级联晶片洗涤系统包括一排刷子对。 每行包括水平和纵向布置的多个反向旋转刷对，并且被配置为通过由每对刷定义的晶片准备区沿垂直取向接收和处理晶片。 刷子对之下和之间是被配置为向晶片施加旋转并且以垂直取向使晶片转过刷对的轨道。 喷嘴在刷对之上和之上分配流体，并且刷对构造成使得流体通过刷对分配。 喷嘴在每个晶片制备区域之间分配流体的帘子，并且级联的晶片洗涤系统被配置为随着晶片转过每个晶片制备区域而从最脏到最干净。

公开(公告)号：US06477786B1

公开(公告)日：2002-11-12

申请号：US09579837

申请日：2000-05-26

申请人： Oliver David Jones ,  Kenneth C. McMahon ,  Jonathan Borkowski ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

发明人： Oliver David Jones ,  Kenneth C. McMahon ,  Jonathan Borkowski ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

IPC分类号： F26B1900

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67046 ,  H01L21/6776

摘要： Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates . The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath. The thermal energy transferred to the substrates in the volume evaporates the thin layer from the substrates without decreasing the rate of separation of the substrates and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of one of the substrates during such separation. Relative humidity in the volume is controlled by sensing the relative humidity and regulating the speed of a fan that draws gas from the volume.

摘要翻译： 通过用于干燥在细长液体浴中润湿的基底的装置和方法从批次的基底中除去液体。 衬底相对于浴移动，并且根据衬底批次在浴中的位置或体积选择移动速率的细长气体填充体积。 作为示例，基板和浴以受控的速率分离，以在每个基板进入气体填充体积时在每个基板上形成薄层的液体。 气体填充体积由细长的热室和引导到体积中并跨过衬底的热气体限定，并且在体积之外连续地将热能传递到衬底。 进入体积的气体的流速与将基底引入浴中以避免干扰浴中的液体有关。 在体积中转移到基底的热能从衬底中蒸发薄层，而不会降低衬底和浴的分离速率低于这种分离的最大速率，其中在浴和表面之间形成弯液面 在这种分离过程中。 通过感测相对湿度并调节从体积吸取气体的风扇的速度来控制体积中的相对湿度。

公开(公告)号：US06446355B1

公开(公告)日：2002-09-10

申请号：US09579841

申请日：2000-05-26

申请人： Oliver David Jones ,  Kenneth C. McMahon ,  Jonathan Borkowski ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

发明人： Oliver David Jones ,  Kenneth C. McMahon ,  Jonathan Borkowski ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

IPC分类号： F26B334

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67046 ,  H01L21/6776

摘要： Liquid is removed from disks by apparatus and methods for drying a disk that has been wet in a liquid bath. The disk and the bath are separated at a controlled rate to form a monolayer of liquid on the disk as the disk is positioned in a gas-filled volume. The separation may be by moving the disk out of the liquid bath, and the controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the disk when the liquid bath and the disk are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the disk in the gas-filled volume. Hot gas directed into the volume and across the disk and out of the volume continuously transfers thermal energy to the disk. The directing of the gas out of the volume is independent of the separation of the bath and the disk. The thermal energy transferred to the disk in the volume evaporates the monolayer from the disk without decreasing the rate of separation of the disk and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of the disk during such separation. In addition to such separation, and directing of the hot gas across the disk and out of the volume, the relative humidity in the volume is kept low to inhibit recondensation of the liquid on the disks.

摘要翻译： 通过用于干燥已经在液浴中润湿的盘的装置和方法将液体从盘上除去。 当盘被定位在充气体积中时，盘和浴以受控的速率分离以在盘上形成单层液体。 分离可以是通过将液体槽移出液槽，并且控制速率通常不低于当液体浴和盘是液体槽时在液体浴和盘表面之间形成弯液面的最大速率 分开 充气体积由热室确定，其在气体填充体积中将热能连续传递到盘。 引导到体积中并跨越盘并且离开体积的热气体将热能连续传递到盘。 将气体引导到体积中是与浴和盘的分离无关的。 在体积中传递到盘的热能从盘中蒸发单层而不降低盘和浴的分离速率低于在浴和表面之间形成弯液面的最大速率的最大速率 在这种分离过程中。 除了这种分离之外，还引导热气体穿过盘并离开体积，体积中的相对湿度保持较低，以防止液体在盘上的再冷凝。

公开(公告)号：US06430841B1

公开(公告)日：2002-08-13

申请号：US09580825

申请日：2000-05-26

申请人： Jonathan Borkowski ,  Oliver David Jones ,  Kenneth C. McMahon ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

发明人： Jonathan Borkowski ,  Oliver David Jones ,  Kenneth C. McMahon ,  Scott Petersen ,  Donald Stephens ,  Yassin Mehmandoust ,  James M. Olivas

IPC分类号： F26B2108

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67046 ,  H01L21/6776

摘要： Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates. The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath. The thermal energy transferred to the substrates in the volume evaporates the thin layer from the substrates without decreasing the rate of separation of the substrates and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of one of the substrates during such separation. Relative humidity in the volume is controlled by sensing the relative humidity and regulating the speed of a fan that draws gas from the volume.

摘要翻译： 通过用于干燥在细长液体浴中润湿的基底的装置和方法从批次的基底中除去液体。 衬底相对于浴移动，并且根据衬底批次在浴中的位置或体积选择移动速率的细长气体填充体积。 作为示例，基板和浴以受控的速率分离，以在每个基板进入气体填充体积时在每个基板上形成薄层的液体。 气体填充体积由细长的热室和引导到体积中并跨过衬底的热气体限定，并且在体积之外连续地将热能传递到衬底。 进入体积的气体的流速与将基底引入浴中以避免干扰浴中的液体有关。 在体积中转移到基底的热能从衬底中蒸发薄层，而不会降低衬底和浴的分离速率低于这种分离的最大速率，其中在浴和表面之间形成弯液面 在这种分离过程中。 通过感测相对湿度并调节从体积吸取气体的风扇的速度来控制体积中的相对湿度。

公开(公告)号：US06616509B1

公开(公告)日：2003-09-09

申请号：US09540161

申请日：2000-03-31

申请人： David T. Frost ,  Oliver David Jones

发明人： David T. Frost ,  Oliver David Jones

IPC分类号： B24B722

CPC分类号： B24B37/08 ,  B24B37/042 ,  B24B49/10 ,  B24D13/02 ,  H01L21/67046

摘要： Methods for preparing semiconductor wafers are provided. A method includes disposing a pair of wafer preparation assemblies in an opposing relationship in an enclosure. Each of the wafer preparation assemblies having a first wafer preparation member and a second wafer preparation member. The method includes disposing a semiconductor wafer between the wafer preparation assemblies in a vertical orientation and rotating the wafer. The method also includes orienting the wafer preparation assemblies such that the first wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship, and orienting the wafer preparation assemblies such that the second wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship.

摘要翻译： 提供制备半导体晶片的方法。 一种方法包括在外壳中以对置的关系布置一对晶片制备组件。 每个晶片制备组件具有第一晶片制备构件和第二晶片制备构件。 该方法包括以垂直取向将半导体晶片布置在晶片准备组件之间并旋转晶片。 该方法还包括定向晶片制备组件，使得第一晶片制备构件以相对的关系接触旋转晶片的相对表面，并且使晶片准备组件定向成使得第二晶片准备构件在旋转晶片的相对表面接触 反对关系。

公开(公告)号：US06457199B1

公开(公告)日：2002-10-01

申请号：US09687622

申请日：2000-10-12

申请人： David T. Frost ,  Oliver David Jones ,  Mike Wallis

发明人： David T. Frost ,  Oliver David Jones ,  Mike Wallis

IPC分类号： B08B1102

CPC分类号： H01L21/67178 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67207 ,  H01L21/67745 ,  Y10S134/902

摘要： A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing. In another example, a method for preparing a substrate is provided. The method includes the batch processing of substrates through substrate processing apparatus arranged within a substrate processing system.

摘要翻译： 提供了一种用于底物制备的系统和方法。 在一个示例中，晶片处理系统包括在隔离晶片处理环境内包含晶片处理装置的系统外壳。 晶片处理装置包括在系统的下前部区域中的一对浸没池，在浸没池之后具有一对晶片拾取器，以从罐中提取晶片。 在系统的后部，一对刷盒位于下部区域中，一对干燥器单元位于刷盒的上方。 机器人臂位于系统的中间区域中的一对浸入池和一对刷盒之间，并且被配置为在处理装置之间转移晶片。 保持输出盒的一对输出架被放置在浸没池的上方。 输出盒在处理后接收干净的晶圆。 在另一个实例中，提供了制备衬底的方法。 该方法包括通过设置在基板处理系统内的基板处理装置批量处理基板。

公开(公告)号：US06482678B1

公开(公告)日：2002-11-19

申请号：US09540421

申请日：2000-03-31

申请人： David T. Frost ,  Oliver David Jones

发明人： David T. Frost ,  Oliver David Jones

IPC分类号： H01L2144

CPC分类号： H01L21/67028 ,  Y10S438/906

摘要： Wafer preparation systems and methods for wafer preparation are provided. The wafer preparation system includes a scrubber unit and a dryer unit arranged vertically with the dryer unit above the scrubber unit. The scrubber unit is configured to receive a wafer for mechanical scrub cleaning, and the dryer unit is configured to receive the wafer from the scrubber unit for drying after the mechanical scrub cleaning. The cleaning and the drying are accomplished with the wafer in a vertical orientation. An edge holder attached to a lifter rod lifts the wafer through the scrubber unit to the dryer unit. The method for wafer preparation includes receiving a wafer in a scrubbing station and lifting the wafer internally from the scrubbing station to the drying station that is located above the scrubbing station in a vertical arrangement.

摘要翻译： 提供晶片制备系统和晶片制备方法。 晶片制备系统包括洗涤器单元和干燥器单元，该干燥器单元垂直地布置有干燥器单元在洗涤器单元上方。 洗涤器单元被配置为接收用于机械擦洗清洁的晶片，并且干燥器单元被配置为在机械擦洗清洁之后从洗涤器单元接收晶片以进行干燥。 清洁和干燥是通过晶片在垂直方向上完成的。 附接到升降杆的边缘保持器将晶片通过洗涤器单元提升到干燥器单元。 用于晶片制备的方法包括在洗涤站中接收晶片并将晶片从洗涤站内部提升到位于洗涤站上方的干燥站，该干燥站处于垂直布置。

公开(公告)号：US06368192B1

公开(公告)日：2002-04-09

申请号：US09540975

申请日：2000-03-31

申请人： Oliver David Jones ,  David T. Frost ,  John G. Dewit

发明人： Oliver David Jones ,  David T. Frost ,  John G. Dewit

IPC分类号： B24B700

CPC分类号： H01L21/67046

摘要： An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a wafer drive assembly having a pair of wafer drive rollers for rotating a semiconductor wafer in a vertical orientation. The wafer drive assembly is configured such that the wafer drive rollers are controllably movable from a first position to a second position. Also provided as part of the apparatus is a pair of wafer preparation assemblies movably disposed in an opposing relationship above the wafer drive assembly. Each of the wafer preparation assemblies has a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is position to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

摘要翻译： 提供了一种用于制备半导体晶片的装置。 该装置包括具有一对晶片驱动辊的晶片驱动组件，用于在垂直方向上旋转半导体晶片。 晶片驱动组件被构造成使得晶片驱动辊可控地从第一位置移动到第二位置。 还提供作为设备的一部分的一对晶片制备组件可移动地设置在晶片驱动组件上方的相对关系中。 每个晶片制备组件具有第一晶片准备部件和第二晶片准备部件。 所述晶片准备组件可移动到第一位置，在所述第一位置中，所述第一晶片准备构件中的每一个位置以在所述晶片上执行第一晶片准备操作并进入第二位置，其中每个所述第二晶片准备构件被定位成执行 在晶片上进行第二晶片制备操作。

公开(公告)号：US06637446B2

公开(公告)日：2003-10-28

申请号：US10211714

申请日：2002-08-01

申请人： David T. Frost ,  Oliver David Jones ,  Mike Wallis

发明人： David T. Frost ,  Oliver David Jones ,  Mike Wallis

IPC分类号： B08B312

CPC分类号： H01L21/67178 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67207 ,  H01L21/67745 ,  Y10S134/902

摘要： A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing.

摘要翻译： 提供了一种用于底物制备的系统和方法。 在一个示例中，晶片处理系统包括在隔离晶片处理环境内包含晶片处理装置的系统外壳。 晶片处理装置包括在系统的下前部区域中的一对浸没池，在浸没池之后具有一对晶片拾取器，以从罐中提取晶片。 在系统的后部，一对刷盒位于下部区域中，一对干燥器单元位于刷盒的上方。 机器人臂位于系统的中间区域中的一对浸入池和一对刷盒之间，并且被配置为在处理装置之间转移晶片。 保持输出盒的一对输出架被放置在浸没池的上方。 输出盒在处理后接收干净的晶圆。