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公开(公告)号：US07737794B2
公开(公告)日：2010-06-15
申请号：US12120331
申请日：2008-05-14
IPC分类号： G01R23/02
CPC分类号： H03L1/022 , H03L1/00 , H03L7/099 , H03L2207/06
摘要： Mechanisms are provided for compensating for process and temperature variations in a circuit. The mechanisms may select at least one resistor in a plurality of resistors in the circuit to provide a resistance value for generating a calibration voltage input to the circuit to compensate for variations in process. A reference signal may be compared to a feedback signal generated by the circuit based on the calibration signal. A determination is made as to whether the feedback signal is within a tolerance of the reference signal and, if so, an identifier of the selected at least one resistor is stored in a memory device coupled to the circuit. The circuit may be operated using the selected at least one resistor based on the identifier stored in the memory device. An apparatus and integrated circuit device utilizing these mechanisms are also provided.
摘要翻译： 提供用于补偿电路中的工艺和温度变化的机构。 这些机构可以选择电路中的多个电阻器中的至少一个电阻器，以提供用于产生输入到电路的校准电压的电阻值，以补偿过程中的变化。 参考信号可以与基于校准信号的电路产生的反馈信号进行比较。 确定反馈信号是否在参考信号的公差之内，如果是，则将所选择的至少一个电阻器的标识符存储在耦合到该电路的存储器件中。 可以基于存储在存储器件中的标识符，使用所选择的至少一个电阻器来操作该电路。 还提供了利用这些机构的装置和集成电路装置。
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公开(公告)号：US20090285344A1
公开(公告)日：2009-11-19
申请号：US12120331
申请日：2008-05-14
IPC分类号： H03D3/24
CPC分类号： H03L1/022 , H03L1/00 , H03L7/099 , H03L2207/06
摘要： Mechanisms are provided for compensating for process and temperature variations in a circuit. The mechanisms may select at least one resistor in a plurality of resistors in the circuit to provide a resistance value for generating a calibration voltage input to the circuit to compensate for variations in process. A reference signal may be compared to a feedback signal generated by the circuit based on the calibration signal. A determination is made as to whether the feedback signal is within a tolerance of the reference signal and, if so, an identifier of the selected at least one resistor is stored in a memory device coupled to the circuit. The circuit may be operated using the selected at least one resistor based on the identifier stored in the memory device. An apparatus and integrated circuit device utilizing these mechanisms are also provided.
摘要翻译： 提供用于补偿电路中的工艺和温度变化的机构。 这些机构可以选择电路中的多个电阻器中的至少一个电阻器，以提供用于产生输入到电路的校准电压的电阻值，以补偿过程中的变化。 参考信号可以与基于校准信号的电路产生的反馈信号进行比较。 确定反馈信号是否在参考信号的公差之内，如果是，则将所选择的至少一个电阻器的标识符存储在耦合到该电路的存储器件中。 可以基于存储在存储器件中的标识符，使用所选择的至少一个电阻器来操作该电路。 还提供了利用这些机构的装置和集成电路装置。
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公开(公告)号：US07851129B2
公开(公告)日：2010-12-14
申请号：US11718091
申请日：2005-09-30
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要翻译： 该抗蚀剂组合物是含有下述化合物的抗蚀剂组合物，其中具有两个以上酚羟基并且分子量为300〜2,500的多元酚化合物（a）中的酚羟基的一部分或全部氢原子被取代为 选自由以下通式（p1）和（p2）表示的酸解离溶解抑制基团中的至少一种，其中R 1和R 2各自独立地表示支链或环状烷基，并且可以在结构中含有杂原子 ; R3表示氢原子或低级烷基; n'表示1〜3的整数。
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4.发明授权Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法公开(公告)号：US07807328B2
公开(公告)日：2010-10-05
申请号：US10588866
申请日：2005-01-20
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
CPC分类号： G03F7/0046 , C08G61/08 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R (1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).
摘要翻译： 本发明提供了一种聚合物化合物，其中碱溶解度在化学放大的正性抗蚀剂中暴露之前和之后剧烈变化，以及包含高分子化合物的光致抗蚀剂组合物和能够以高分辨率形成精细图案的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀图案形成方法使用包含至少一个选自醇羟基，酚羟基或羧基的取代基的聚合物化合物作为碱溶性基团（i），其中取代基被保护 由通式（1）表示的酸解离的溶解抑制基团（ⅱ）：-CH 2 -O-R（1）（其中R表示含有不超过20个碳原子的有机基团和至少一个亲水基团） 。
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5.发明授权Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。
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6.发明申请Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method 有权高分子化合物，包含聚合物化合物的光致抗蚀剂组合物和抗蚀剂图案形成方法公开(公告)号：US20080166655A1
公开(公告)日：2008-07-10
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
摘要翻译： 本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性， 并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合物; 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基 羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ii）保护：<？in-line-formula description =“In-line Formulas”end =“lead”？ > -CH 2 - - - - - - - - - - - - - - （2） （其中R 1表示含有不多于20个碳原子的脂环族基团，并且可以含有氧原子，氮原子， 硫原子或卤素原子，n表示0或1〜5的整数。
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7.发明申请公开(公告)号：US20070052383A1
公开(公告)日：2007-03-08
申请号：US11498041
申请日：2006-08-03
申请人： Hiroyuki Abe , Toshiyuki Ogata , Hiroyuki Kawamura
发明人： Hiroyuki Abe , Toshiyuki Ogata , Hiroyuki Kawamura
IPC分类号： G05D13/00
CPC分类号： G05B19/4062 , G05B2219/37626 , G05B2219/37632
摘要： A speed region of a motor is divided into a region lower than a first switch speed VS1, a region higher than a second switch speed VS2 and a region between the first and second switch speeds. An abnormal load determination level to be compared with an estimated load obtained by an observer is set for each of the regions. An abnormal load determination level AL4 applied when an acceleration exceeds a threshold value is set. The abnormal load determination level AL4 is used for comparison with the estimated load until a predetermined period of time elapses after the acceleration to be commanded to the motor, which once exceeded the threshold level, drops. In other cases, the estimated load is compared with the abnormal load determination level having a value according to the speed. If the estimated load exceeds the compared abnormal load determination level, it is judged that a collision is detected.
摘要翻译： 电动机的速度区域被划分为低于第一开关速度VS1，高于第二开关速度VS2的区域和第一和第二开关速度之间的区域的区域。 针对每个区域设定要与观察者获得的估计负载进行比较的异常负载确定水平。 设定当加速度超过阈值时施加的异常负载判定水平AL 4。 异常负载判定电平AL4用于与估计的负载进行比较，直到在超过阈值电平的电动机被命令的加速后经过预定时间段时。 在其他情况下，将估计负载与根据速度具有值的异常负载确定水平进行比较。 如果估计负载超过比较的异常负载判定水平，则判断为检测到碰撞。
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8.发明申请Photoresist composition and, used in the photoresist composition, low-molecular compound and high-molecular compound 有权光致抗蚀剂组合物，用于光致抗蚀剂组合物中的低分子化合物和高分子化合物公开(公告)号：US20060210913A1
公开(公告)日：2006-09-21
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03C1/76
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。
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公开(公告)号：US06998562B2
公开(公告)日：2006-02-14
申请号：US11141471
申请日：2005-06-01
申请人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
发明人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
摘要： Set feed speed is lowered when a short circuit is detected in a range within which machining is unstable, the range starting from the point at which discharge is detected after machining starts from a machining start point, thus control is carried our according to a machining rate, thereby preventing successive occurrence of short circuits. When machining proceeds beyond the unstable range, the lowered feed speed is returned to the normal feed speed.
摘要翻译： 在加工不稳定的范围内检测到短路时，设定进给速度降低，从加工后检测到放电的点开始的范围从加工起点开始，由此根据加工速度进行控制 ，从而防止短路的连续发生。 当加工进入超出不稳定范围时，降低的进给速度返回正常进给速度。
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10.发明授权Positive resist composition and base material carrying layer of the positive resist composition 有权正型抗蚀剂组合物的正性抗蚀剂组合物和基材载体层公开(公告)号：US06787284B2
公开(公告)日：2004-09-07
申请号：US09922723
申请日：2001-08-07
申请人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
发明人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
IPC分类号： G03C173
CPC分类号： G03F7/0757 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.
摘要翻译： 正型抗蚀剂组合物包括（A）碱溶性聚硅氧烷树脂，（B）由在活性光或辐射线照射时产生酸的化合物组成的酸发生剂，和（C）至少一种氢 酚羟基或羧基的原子被酸可分解基团取代。 该正性抗蚀剂组合物可用于使用F2准分子激光器（157nm），极紫外线（EUV，真空紫外线; 13nm）和波长等于或短于KrF准分子激光器的其它光源的方法，并具有 高清晰度，可以形成具有良好截面形状的抗蚀剂图案。 携带正性抗蚀剂组合物层的基材也是有用的。
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