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    Thermally processing a substrate
    2.
    发明授权
    Thermally processing a substrate 失效
    热处理基材

    公开(公告)号：US06803546B1

    公开(公告)日：2004-10-12

    申请号：US09611349

    申请日：2000-07-06

    申请人： Ryan C Boas ,  Ajit Balakrishna ,  Benjamin Bierman ,  Brian L Haas ,  Dean Jennings ,  Wolfgang Aderhold ,  Sundar Ramamurthy ,  Abhilash Mayur

    发明人： Ryan C Boas ,  Ajit Balakrishna ,  Benjamin Bierman ,  Brian L Haas ,  Dean Jennings ,  Wolfgang Aderhold ,  Sundar Ramamurthy ,  Abhilash Mayur

    IPC分类号： F27B514

    CPC分类号： C30B25/10 ,  C30B31/12 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

    摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

    摘要翻译： 描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。 这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。 特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。 可以通过改变基底和热储层之间的热导率，改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。

    Managing thermal budget in annealing of substrates
    8.
    发明授权
    Managing thermal budget in annealing of substrates 有权
    管理基板退火中的热预算

    公开(公告)号：US08314369B2

    公开(公告)日：2012-11-20

    申请号：US12212214

    申请日：2008-09-17

    申请人： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

    发明人： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

    IPC分类号： H01L21/26 ,  F27B5/14 ,  F27D13/00

    CPC分类号： H01L21/67109 ,  H01L21/67115

    摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    摘要翻译： 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度分布。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

    Backside rapid thermal processing of patterned wafers
    9.
    发明申请
    Backside rapid thermal processing of patterned wafers 有权
    图案化晶片的背面快速热处理

    公开(公告)号：US20050191044A1

    公开(公告)日：2005-09-01

    申请号：US10788979

    申请日：2004-02-27

    申请人： Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    发明人： Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

    IPC分类号： F26B19/00 ,  F27B5/14 ,  F27B17/00 ,  F27D11/00 ,  F27D19/00 ,  F27D21/00 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014

    摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.

    摘要翻译： 热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 其上形成图案化集成电路的晶片的正面面向辐射反射器。 对来自反射器侧的温度和反射率进行热监测晶片。 当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。 或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。