Adaptive control method for rapid thermal processing of a substrate
    1.
    发明申请
    Adaptive control method for rapid thermal processing of a substrate 有权
    一种基板快速热处理的自适应控制方法

    公开(公告)号:US20070238202A1

    公开(公告)日:2007-10-11

    申请号:US11393423

    申请日:2006-03-30

    IPC分类号: H01L21/66 G01R31/26

    摘要: The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

    摘要翻译: 本发明一般涉及用于衬底的快速热处理(RTP)的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中,使用控制算法的组合,其中大多数灯分组由固定控制算法控制,并且通过自适应控制算法来控制基本上较少数量的灯区。

    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES
    3.
    发明申请
    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 审中-公开
    管理衬底退火中的热预算

    公开(公告)号:US20100068898A1

    公开(公告)日:2010-03-18

    申请号:US12212157

    申请日:2008-09-17

    IPC分类号: H01L21/00 F27D11/00

    摘要: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    摘要翻译: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要,预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源,例如激光器,加热灯,白光灯或闪光灯。

    Lamp assembly having flexibly positioned rigid plug
    6.
    发明申请
    Lamp assembly having flexibly positioned rigid plug 有权
    灯组件具有灵活定位的刚性插头

    公开(公告)号:US20050286243A1

    公开(公告)日:2005-12-29

    申请号:US10877246

    申请日:2004-06-25

    摘要: A lamp assembly for a substrate processing chamber is described. The lamp assembly comprises a tubular body having first and second ends, a lamp element at least partially seated in the first end having a filament and first electrical connectors, transmission wires attached to the first electrical connectors, and a rigid plug flexibly positioned relative to the second end of the tubular body having second electrical connectors attached to the transmission wires. The flexibly positioned rigid plug is generally capable of a range movement in directions both perpendicular and parallel to a longitudinal axis of the tubular body. In one version, the rigid plug comprises first and second plug elements.

    摘要翻译: 描述了用于基板处理室的灯组件。 灯组件包括具有第一和第二端的管状主体,至少部分地位于第一端中的灯元件具有灯丝和第一电连接器,连接到第一电连接器的传输线以及相对于第一端柔性定位的刚性插头 管体的第二端具有连接到传输线的第二电连接器。 柔性定位的刚性塞通常能够在垂直于和平行于管状体的纵向轴线的方向上的范围移动。 在一个版本中,刚性插头包括第一和第二插头元件。

    Methods for plasma matching between different chambers and plasma stability monitoring and control
    8.
    发明授权
    Methods for plasma matching between different chambers and plasma stability monitoring and control 有权
    不同室之间等离子体匹配的方法和等离子体稳定性监测与控制

    公开(公告)号:US07813895B2

    公开(公告)日:2010-10-12

    申请号:US11829762

    申请日:2007-07-27

    IPC分类号: G06F11/30

    摘要: Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.

    摘要翻译: 公开了使用校准的光谱仪来匹配半导体等离子体处理室的方法。 在一个实施例中,测量参考室中的过程和样品室中的过程的等离子体属性。 在处理扰动期间测量等离子体属性允许工艺参数与等离子体发射光谱的相关性。 然后可以调整工艺参数以产生与参考室的处理参数相匹配的经处理的衬底。 还公开了使用校准的光谱仪监测等离子体处理室的稳定性的方法。