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公开(公告)号：US20080090309A1
公开(公告)日：2008-04-17
申请号：US11751027
申请日：2007-05-20
申请人： JOSEPH RANISH , Balasubramanian Ramachandran , Ravi Jallepally , Sundar Ramamurthy , Vedapuram Achutharaman , Brian Haas , Aaron Hunter , Wolfgang Aderhold
发明人： JOSEPH RANISH , Balasubramanian Ramachandran , Ravi Jallepally , Sundar Ramamurthy , Vedapuram Achutharaman , Brian Haas , Aaron Hunter , Wolfgang Aderhold
IPC分类号： H01L21/324
CPC分类号： H01L21/67248 , H01L21/324 , H01L21/67115
摘要： A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.
摘要翻译： 公开了一种快速热退火的方法。 当衬底被插入退火室时，由于从先前的衬底退火时被加热的腔室部件散发的热量开始加热。 因此，衬底的前缘可能处于升高的温度，而衬底的后缘可能在室温下而衬底被插入，导致衬底上存在温度梯度。 一旦基板完全插入退火室，温度梯度可能仍然存在。 通过补偿跨越衬底的温度梯度，衬底可以均匀退火。
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公开(公告)号：US20070238202A1
公开(公告)日：2007-10-11
申请号：US11393423
申请日：2006-03-30
申请人： Joseph Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Chang
发明人： Joseph Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Chang
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译： 本发明一般涉及用于衬底的快速热处理（RTP）的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。
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公开(公告)号：US07414224B2
公开(公告)日：2008-08-19
申请号：US11610759
申请日：2006-12-14
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译： 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。
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公开(公告)号：US09431278B2
公开(公告)日：2016-08-30
申请号：US12193439
申请日：2008-08-18
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译： 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。
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公开(公告)号：US20090041443A1
公开(公告)日：2009-02-12
申请号：US12193439
申请日：2008-08-18
IPC分类号： F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译： 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。
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公开(公告)号：US20050191044A1
公开(公告)日：2005-09-01
申请号：US10788979
申请日：2004-02-27
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
摘要翻译： 热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 其上形成图案化集成电路的晶片的正面面向辐射反射器。 对来自反射器侧的温度和反射率进行热监测晶片。 当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。 或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。
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公开(公告)号：US08658945B2
公开(公告)日：2014-02-25
申请号：US10788979
申请日：2004-02-27
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.
摘要翻译： 热处理晶片或其它基板的设备和方法，例如快速热处理（RTP）。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 其上形成图案化集成电路的晶片的正面面向辐射反射器。 对来自反射器侧的温度和反射率进行热监测晶片。 当灯在晶片之上时，边缘环在其边缘排除区域中支撑晶片。 或者，反应器包括向上定向的灯和在晶片的正面上方并面向晶片前侧的反射器。
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公开(公告)号：US20070104470A1
公开(公告)日：2007-05-10
申请号：US11610759
申请日：2006-12-14
IPC分类号： F21V7/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译： 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。
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公开(公告)号：US07398693B2
公开(公告)日：2008-07-15
申请号：US11393423
申请日：2006-03-30
申请人： Joseph Michael Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Teh Chang
发明人： Joseph Michael Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Teh Chang
IPC分类号： G01L9/06
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译： 本发明一般涉及用于衬底的快速热处理（RTP）的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。
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公开(公告)号：US06803546B1
公开(公告)日：2004-10-12
申请号：US09611349
申请日：2000-07-06
申请人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
发明人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
IPC分类号： F27B514
CPC分类号： C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.
摘要翻译： 描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。 这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。 特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。 可以通过改变基底和热储层之间的热导率，改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。
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