公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07867578B2

公开(公告)日：2011-01-11

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20120208373A1

公开(公告)日：2012-08-16

申请号：US13455984

申请日：2012-04-25

申请人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20080153311A1

公开(公告)日：2008-06-26

申请号：US12042829

申请日：2008-03-05

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20080003824A1

公开(公告)日：2008-01-03

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20110090613A1

公开(公告)日：2011-04-21

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683 ,  H01L21/66 ,  G01R27/02

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US20090044753A1

公开(公告)日：2009-02-19

申请号：US12255638

申请日：2008-10-21

申请人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/30

CPC分类号： C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

摘要翻译： 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20120204795A1

公开(公告)日：2012-08-16

申请号：US13456447

申请日：2012-04-26

申请人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/50

CPC分类号： C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

摘要翻译： 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US07514125B2

公开(公告)日：2009-04-07

申请号：US11680278

申请日：2007-02-28

申请人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

摘要： Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

摘要翻译： 提供制造具有用于半导体应用中的保护涂层的制品的方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。